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Erh-Kun Lai
Erh-Kun Lai
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Title
Cited by
Cited by
Year
Bridge resistance random access memory device with a singular contact structure
CH Ho, EK Lai, KY Hsieh
US Patent 7,608,848, 2009
3532009
3D two bit-per-cell NAND flash memory
HL Lung, HT Lue, YH Shih, EK Lai, MH Lee, TY Wang
US Patent 8,437,192, 2013
3152013
3D memory array arranged for FN tunneling program and erase
HL Lung, YH Shih, EK Lai, MH Lee, HT Lue
US Patent 8,203,187, 2012
2702012
Programmable resistive RAM and manufacturing method
CH Ho, EK Lai, KY Hsieh
US Patent 7,560,337, 2009
2522009
Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
EK Lai, YH Shih, TH Hsu, SC Lee, JY Hsieh, KY Hsieh
US Patent 7,450,423, 2008
2492008
Multi-level cell resistance random access memory with metal oxides
EK Lai, CH Ho, KY Hsieh
US Patent 7,697,316, 2010
2362010
Cell operation methods using gate-injection for floating gate NAND flash memory
HT Lue, TH Hsu, EK Lai
US Patent 8,325,530, 2012
2232012
Resistive random access memory and method for manufacturing the same
MD Lee, CH Ho, EK Lai, KY Hsieh
US Patent 8,114,715, 2012
2162012
Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
CH Ho, EK Lai, KY Hsieh
US Patent 7,586,778, 2009
2132009
Manufacturing method for phase change RAM with electrode layer process
EK Lai, CH Ho, YC Chen, KY Hsieh
US Patent 7,605,079, 2009
2102009
Memory cell device and manufacturing method
EK Lai, CH Ho, KY Hsieh
US Patent 7,599,217, 2009
1982009
Method for forming self-aligned thermal isolation cell for a variable resistance memory array
EK Lai, CH Ho, KY Hsieh
US Patent 7,531,825, 2009
1942009
Phase change materials and their application to random access memory technology
S Raoux, RM Shelby, J Jordan-Sweet, B Munoz, M Salinga, YC Chen, ...
Microelectronic Engineering 85 (12), 2330-2333, 2008
1812008
Programmable resistive RAM and manufacturing method
C Ho, EK Lai, KY Hsieh
US Patent 7,595,218, 2009
1792009
BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability
HT Lue, SY Wang, EK Lai, YH Shih, SC Lai, LW Yang, KC Chen, J Ku, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
1782005
Structures and methods of a bistable resistive random access memory
CH Ho, EK Lai, KY Hsieh
US Patent 8,129,706, 2012
1612012
Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
HL Lung, EK Lai
US Patent 8,089,137, 2012
1582012
Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
HL Lung, EK Lai, YH Shih, YC Chen, SH Chen
US Patent 8,907,316, 2014
1452014
Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
HT Lue, EK Lai
US Patent 7,576,386, 2009
1262009
Unipolar Switching Behaviors of RTO RRAM
WC Chien, YC Chen, EK Lai, YD Yao, P Lin, SF Horng, J Gong, TH Chou, ...
IEEE electron device letters 31 (2), 126-128, 2010
1192010
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