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Wenshen Li
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Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
2062018
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Electron Device Letters 41 (1), 107-110, 2019
1142019
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (12), 122103, 2018
1082018
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (20), 202101, 2018
1042018
Design and realization of GaN trench junction-barrier-Schottky-diodes
W Li, K Nomoto, M Pilla, M Pan, X Gao, D Jena, HG Xing
IEEE Transactions on Electron Devices 64 (4), 1635-1641, 2017
752017
2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ...
2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018
652018
1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy
Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
632017
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
W Li, D Saraswat, Y Long, K Nomoto, D Jena, HG Xing
Applied Physics Letters 116 (19), 192101, 2020
502020
Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV
W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing
2019 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2019
472019
GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz
L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ...
IEEE Electron Device Letters 41 (5), 689-692, 2020
452020
Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes
W Li, K Nomoto, Z Hu, D Jena, HG Xing
Applied Physics Express 12 (6), 061007, 2019
442019
Development of GaN vertical trench-MOSFET with MBE regrown channel
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ...
IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018
392018
Activation of buried p-GaN in MOCVD-regrown vertical structures
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ...
Applied Physics Letters 113 (6), 062105, 2018
382018
1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation
Z Hu, K Nomoto, W Li, R Jinno, T Nakamura, D Jena, H Xing
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
322019
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
APL Materials 10 (2), 029201, 2022
302022
Guiding principles for trench Schottky barrier diodes based on ultrawide bandgap semiconductors: a case study in Ga₂O₃
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Transactions on Electron Devices 67 (10), 3938-3947, 2020
292020
Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3
W Li, K Nomoto, D Jena, HG Xing
Applied Physics Letters 117 (22), 222104, 2020
212020
Vertical fin Ga2O3power field-effect transistors with on/off ratio >109
Z Hu, K Nomoto, W Li, LJ Zhang, JH Shin, N Tanen, T Nakamura, D Jena, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
192017
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
E Fabris, C De Santi, A Caria, W Li, K Nomoto, Z Hu, D Jena, HG Xing, ...
IEEE Transactions on Electron Devices 67 (10), 3954-3959, 2020
172020
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
152022
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