Reduction of oscillator strength due to piezoelectric fields in quantum wells JS Im, H Kollmer, J Off, A Sohmer, F Scholz, A Hangleiter Physical Review B 57 (16), R9435, 1998 | 874 | 1998 |
Suppression of Nonradiative Recombination by V-Shaped Pits in Quantum Wells Produces a Large Increase in the Light Emission Efficiency A Hangleiter, F Hitzel, C Netzel, D Fuhrmann, U Rossow, G Ade, P Hinze Physical review letters 95 (12), 127402, 2005 | 542 | 2005 |
Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN JS Im, A Moritz, F Steuber, V Härle, F Scholz, A Hangleiter Applied physics letters 70 (5), 631-633, 1997 | 299 | 1997 |
Enhancement of band-to-band Auger recombination by electron-hole correlations A Hangleiter, R Häcker Physical Review Letters 65 (2), 215, 1990 | 247 | 1990 |
The role of piezoelectric fields in GaN-based quantum wells A Hangleiter, JS Im, H Kollmer, S Heppel, J Off, F Scholz Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 213 | 1998 |
Intrinsic upper limits of the carrier lifetime in silicon R Häcker, A Hangleiter Journal of Applied Physics 75 (11), 7570-7572, 1994 | 180 | 1994 |
Nonradiative recombination via deep impurity levels in silicon: Experiment A Hangleiter Physical Review B 35 (17), 9149, 1987 | 162 | 1987 |
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes WG Scheibenzuber, UT Schwarz, RG Veprek, B Witzigmann, A Hangleiter Physical Review B—Condensed Matter and Materials Physics 80 (11), 115320, 2009 | 160 | 2009 |
Auger recombination in bulk and quantum well InGaAs S Hausser, G Fuchs, A Hangleiter, K Streubel, WT Tsang Applied physics letters 56 (10), 913-915, 1990 | 142 | 1990 |
Composition dependence of polarization fields in GaInN/GaN quantum wells A Hangleiter, F Hitzel, S Lahmann, U Rossow Applied physics letters 83 (6), 1169-1171, 2003 | 140 | 2003 |
Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures T Langer, A Kruse, FA Ketzer, A Schwiegel, L Hoffmann, H Jönen, ... physica status solidi c 8 (7‐8), 2170-2172, 2011 | 138 | 2011 |
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum‐well lasers G Fuchs, C Schiedel, A Hangleiter, V Härle, F Scholz Applied physics letters 62 (4), 396-398, 1993 | 126 | 1993 |
Influence of barrier height on carrier lifetime in Ga 1− y In y P/(Al x Ga 1− x) 1− y In y P single quantum wells P Michler, A Hangleiter, M Moser, M Geiger, F Scholz Physical Review B 46 (11), 7280, 1992 | 124 | 1992 |
Optical gain in GaInN/GaN heterostructures G Frankowsky, F Steuber, V Härle, F Scholz, A Hangleiter Applied physics letters 68 (26), 3746-3748, 1996 | 113 | 1996 |
Towards understanding the emission efficiency of nitride quantum wells A Hangleiter, D Fuhrmann, M Grewe, F Hitzel, G Klewer, S Lahmann, ... physica status solidi (a) 201 (12), 2808-2813, 2004 | 104 | 2004 |
Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism A Hangleiter Physical Review B 37 (5), 2594, 1988 | 102 | 1988 |
Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures G Fuchs, J Hörer, A Hangleiter, V Härle, F Scholz, RW Glew, L Goldstein Applied physics letters 60 (2), 231-233, 1992 | 100 | 1992 |
Intra-and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields H Kollmer, JS Im, S Heppel, J Off, F Scholz, A Hangleiter Applied physics letters 74 (1), 82-84, 1999 | 91 | 1999 |
Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures T Langer, H Jönen, A Kruse, H Bremers, U Rossow, A Hangleiter Applied Physics Letters 103 (2), 2013 | 89 | 2013 |
On excitation and decay mechanisms of the Yb3+ luminescence in InP K Thonke, K Pressel, G Bohnert, A Stapor, J Weber, M Moser, A Molassioti, ... Semiconductor science and technology 5 (11), 1124, 1990 | 89 | 1990 |