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Erfan Abbasian
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Year
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
E Abbasian, M Gholipour
Journal of Computational Electronics 19 (3), 987–1001, 2020
172020
Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
E Abbasian, M Gholipour
International Journal of Circuit Theory and Applications 49 (4), 970-989, 2021
152021
Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications
E Abbasian, M Gholipour
AEU-International Journal of Electronics and Communications 138, 153899, 2021
102021
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
E Abbasian, M Gholipour, F Izadinasab
International Journal of Circuit Theory and Applications 49 (11), 3630-3652, 2021
102021
A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology
E Abbasian, S Birla, M Gholipour
Silicon, 1-12, 2021
62021
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology
E Abbasian, E Mani, M Gholipour, M Karamimanesh, M Sahid, A Zaidi
Circuits, Systems, and Signal Processing 41, 3081–3105, 2022
52022
A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications
E Abbasian, M Gholipour
International Journal of Circuit Theory and Applications, 1-20, 2022
52022
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins
E Abbasian, F Izadinasab, M Gholipour
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1606 - 1616, 2022
52022
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
E Abbasian, S Birla, M Gholipour
Microelectronics Journal 123, 105427, 2022
32022
A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs
E Abbasian, S Birla, M Gholipour
Analog Integrated Circuits and Signal Processing, 1-9, 2022
22022
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla
Arabian Journal for Science and Engineering, 1-17, 2022
12022
Improved read/write assist mechanism for 10‐transistor static random access memory cell
E Abbasian, M Gholipour
International Journal of Circuit Theory and Applications, 2022
2022
Correction: A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs
E Abbasian, S Birla, M Gholipour
Analog Integrated Circuits and Signal Processing 111 (3), 495-495, 2022
2022
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications
E Abbasian, M Gholipour
Circuits, Systems, and Signal Processing, 1-19, 2022
2022
Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications
E Abbasian, M Gholipour
Semiconductor Science and Technology, 2022
2022
Evaluating Schottky-Barrier-Type GNRFETs-Based Static Flip-Flop Characteristic under Manufacturing Process Parameters Variations
E Abbasian, M Gholipour
Nashriyyah-i Muhandisi-i Barq va Muhandisi-i Kampyutar-i Iran 80 (2), 145, 2021
2021
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