| Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film S Huang, Q Jiang, S Yang, C Zhou, KJ Chen IEEE Electron Device Letters 33 (4), 516-518, 2012 | 282 | 2012 |
| Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices C Zhou, Q Jiang, S Huang, KJ Chen IEEE Electron Device Letters 33 (8), 1132-1134, 2012 | 218 | 2012 |
| Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems J Chen, C Wanjun, Z Chunhua US Patent 8,076,699, 2011 | 203 | 2011 |
| Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology KJ Chen, C Zhou Physica status solidi (a) 208 (2), 434-438, 2011 | 185 | 2011 |
| Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ... 2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011 | 93 | 2011 |
| Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017 | 80 | 2017 |
| Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement S Yang, C Zhou, Q Jiang, J Lu, B Huang, KJ Chen Applied physics letters 104 (1), 2014 | 68 | 2014 |
| GaN smart power IC technology KY Wong, W Chen, X Liu, C Zhou, KJ Chen physica status solidi (b) 247 (7), 1732-1734, 2010 | 55 | 2010 |
| AlGaN/GaN MISHEMTs With High-Gate Dielectric S Yang, S Huang, H Chen, C Zhou, Q Zhou, M Schnee, QT Zhao, ... IEEE Electron Device Letters 33 (7), 979-981, 2012 | 53 | 2012 |
| Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability C Zhou, W Chen, EL Piner, KJ Chen IEEE electron device letters 31 (7), 668-670, 2010 | 46 | 2010 |
| Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power IC platform Q Jiang, Z Tang, C Zhou, S Yang, KJ Chen IEEE Transactions on Electron Devices 61 (11), 3808-3813, 2014 | 44 | 2014 |
| Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage Q Zhou, H Chen, C Zhou, ZH Feng, SJ Cai, KJ Chen IEEE electron device letters 33 (1), 38-40, 2011 | 42 | 2011 |
| High breakdown voltage 4H-SiC MESFETs with floating metal strips J Zhang, Y Ye, C Zhou, X Luo, B Zhang, Z Li Microelectronic Engineering 85 (1), 89-92, 2008 | 42 | 2008 |
| GaN: A Reliable Future in Power Conversion: Dramatic performance improvements at a lower cost A Lidow, J Strydom, R Strittmatter, C Zhou IEEE Power Electronics Magazine 2 (1), 20-26, 2015 | 38 | 2015 |
| Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same J Chen, Z Chunhua US Patent 8,564,020, 2013 | 38 | 2013 |
| Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors J Chen, L Yuan, H Chen, Z Chunhua US Patent 8,809,987, 2014 | 32 | 2014 |
| Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures C Zhou, Q Jiang, S Huang, KJ Chen 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 30 | 2012 |
| Enhancement mode gallium nitride transistor reliability R Strittmatter, C Zhou, A Lidow, Y Ma 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1409-1413, 2015 | 22 | 2015 |
| ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors C Ma, H Chen, C Zhou, S Huang, L Yuan, J Roberts, K Chen Journal of applied physics 110 (11), 2011 | 22 | 2011 |
| Enhancement mode gallium nitride transistor reliability A Lidow, R Strittmatter, C Zhou, Y Ma 2015 IEEE International Reliability Physics Symposium, 2E. 1.1-2E. 1.5, 2015 | 21 | 2015 |
