Valentin Jmerik
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Mie resonances, infrared emission, and the band gap of InN
TV Shubina, SV Ivanov, VN Jmerik, DD Solnyshkov, VA Vekshin, ...
Physical Review Letters 92 (11), 117407, 2004
High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure
X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
Plasma-assisted MBE growth and characterization of InN on sapphire
SV Ivanov, TV Shubina, VN Jmerik, VA Vekshin, PS Kop’ev, B Monemar
Journal of crystal growth 269 (1), 1-9, 2004
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
VN Jmerik, AM Mizerov, AA Sitnikova, PS Kop’ev, SV Ivanov, EV Lutsenko, ...
Applied Physics Letters 96 (14), 2010
Metastable nature of InN and In-rich InGaN alloys
SV Ivanov, TV Shubina, TA Komissarova, VN Jmerik
Journal of crystal growth 403, 83-89, 2014
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
DV Nechaev, PA Aseev, VN Jmerik, PN Brunkov, YV Kuznetsova, ...
Journal of crystal growth 378, 319-322, 2013
Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers
VN Jmerik, EV Lutsenko, SV Ivanov
physica status solidi (a) 210 (3), 439-450, 2013
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ...
Scientific Reports 8 (1), 7311, 2018
Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring
VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ...
Journal of crystal growth 354 (1), 188-192, 2012
Deep ultraviolet light source from ultrathin GaN/AlN MQW structures with output power over 2 watt
Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ...
Advanced Optical Materials 7 (10), 1801763, 2019
Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3
SV Ivanov, DV Nechaev, AA Sitnikova, VV Ratnikov, MA Yagovkina, ...
Semiconductor Science and Technology 29 (8), 084008, 2014
Optically enhanced emission of localized excitons in In x Ga 1− x N films by coupling to plasmons in a gold nanoparticle
AA Toropov, TV Shubina, VN Jmerik, SV Ivanov, Y Ogawa, F Minami
Physical review letters 103 (3), 037403, 2009
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev, AV Sakharov, ...
Journal of crystal growth 311 (7), 2080-2083, 2009
E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW
SV Ivanov, VN Jmerik, DV Nechaev, VI Kozlovsky, MD Tiberi
physica status solidi (a) 212 (5), 1011-1016, 2015
Optical properties of InN with stoichoimetry violation and indium clustering
TV Shubina, SV Ivanov, VN Jmerik, MM Glazov, AP Kalvarskii, ...
physica status solidi (a) 202 (3), 377-382, 2005
High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3
VN Jmerik, DV Nechaev, AA Toropov, EA Evropeitsev, VI Kozlovsky, ...
Applied Physics Express 11 (9), 091003, 2018
Solar-blind UV photocathodes based on AlGaN heterostructures with a 300-to 330-nm spectral sensitivity threshold
MR Ainbund, AN Alekseev, OV Alymov, VN Jmerik, LV Lapushkina, ...
Technical Physics Letters 38, 439-442, 2012
High resolution transmission electron microscopy of InN
TP Bartel, C Kisielowski, P Specht, TV Shubina, VN Jmerik, SV Ivanov
Applied Physics Letters 91 (10), 2007
InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range
SV Ivanov, VN Jmerik, TV Shubina, SB Listoshin, AM Mizerov, ...
Journal of crystal growth 301, 465-468, 2007
Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet
AA Toropov, EA Evropeitsev, MO Nestoklon, DS Smirnov, TV Shubina, ...
Nano Letters 20 (1), 158-165, 2019
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