| A InGaN/GaN quantum dot green (λ= 524 nm) laser M Zhang, A Banerjee, CS Lee, JM Hinckley, P Bhattacharya Applied Physics Letters 98 (22), 2011 | 96 | 2011 |
| White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes CT Lee, UZ Yang, CS Lee, PS Chen IEEE photonics technology letters 18 (19), 2029-2031, 2006 | 78 | 2006 |
| Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers CS Lee, YJ Lin, CT Lee Applied physics letters 79 (23), 3815-3817, 2001 | 67 | 2001 |
| AlGaN/GaN MOS-HEMTs with gate ZnO dielectric layer CT Lee, YL Chiou, CS Lee IEEE electron device letters 31 (11), 1220-1223, 2010 | 58 | 2010 |
| High-performance quantum ring detector for the 1–3 terahertz range S Bhowmick, G Huang, W Guo, CS Lee, P Bhattacharya, G Ariyawansa, ... Applied Physics Letters 96 (23), 2010 | 56 | 2010 |
| Influence of the donor/acceptor interface on the open-circuit voltage in organic solar cells ZT Liu, MF Lo, HB Wang, TW Ng, VAL Roy, CS Lee, ST Lee Applied Physics Letters 95 (9), 2009 | 54 | 2009 |
| Ambient effects on fullerene/copper phthalocyanine photovoltaic interface TW Ng, MF Lo, YC Zhou, ZT Liu, CS Lee, O Kwon, ST Lee Applied Physics Letters 94 (19), 2009 | 54 | 2009 |
| Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission MZM Khan, TK Ng, CS Lee, P Bhattacharya, BS Ooi Applied Physics Letters 102 (9), 2013 | 33 | 2013 |
| AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4) 2Sx surface treatment YL Chiou, CS Lee, CT Lee Applied Physics Letters 97 (3), 2010 | 32 | 2010 |
| Electrically injected parity time–symmetric single transverse–mode lasers R Yao, CS Lee, V Podolskiy, W Guo Laser & Photonics Reviews 13 (1), 1800154, 2019 | 27 | 2019 |
| Investigation of chirped InAs/InGaAlAs/InP quantum dash lasers as broadband emitters MZM Khan, TK Ng, CS Lee, P Bhattacharya, BS Ooi IEEE Journal of Quantum Electronics 50 (2), 51-61, 2013 | 27 | 2013 |
| High performance tunnel injection quantum dot comb laser CS Lee, W Guo, D Basu, P Bhattacharya Applied Physics Letters 96 (10), 2010 | 25 | 2010 |
| Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser CS Lee, P Bhattacharya, T Frost, W Guo Applied Physics Letters 98 (1), 2011 | 20 | 2011 |
| High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding Z Wang, R Yao, SF Preble, CS Lee, LF Lester, W Guo Applied Physics Letters 107 (26), 2015 | 17 | 2015 |
| Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding Z Wang, ML Fanto, JA Steidle, AA Aboketaf, NA Rummage, PM Thomas, ... Applied Physics Letters 110 (14), 2017 | 14 | 2017 |
| Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With InxAl1-xAs Strain-Reducing Layers R Yao, N Weir, CS Lee, W Guo IEEE Photonics Journal 8 (3), 1-7, 2016 | 14 | 2016 |
| Frequency and noise performances of photoelectrochemically etched and oxidized gate-recessed AlGaN/GaN MOS-HEMTs YL Chiou, CS Lee, CT Lee Journal of the Electrochemical Society 158 (5), H477, 2011 | 11 | 2011 |
| Distinct lasing operation from chirped InAs/InP quantum-dash laser MZM Khan, TK Ng, CS Lee, DH Anjum, D Cha, P Bhattacharya, BS Ooi IEEE Photonics Journal 5 (4), 1501308-1501308, 2013 | 10 | 2013 |
| High Temperature Stable Operation of 1.3-m Quantum-Dot Laser Integrated With Single-Mode Tapered SiNWaveguide CS Lee, T Frost, W Guo, P Bhattacharya IEEE Photonics Technology Letters 24 (11), 918-920, 2012 | 8 | 2012 |
| Investigation of surface passivation on GaAs-based compound solar cell using photoelectrochemical oxidation method CY Tseng, CS Lee, HY Shin, CT Lee Journal of the Electrochemical Society 157 (7), H779, 2010 | 8 | 2010 |
Wei GuoUniversity of Massachusetts LowellVerified email at uml.edu
