| Evaluation of mobility in thin Bi2Se3 Topological Insulator for prospects of Local Electrical Interconnects G Gupta, MBA Jalil, G Liang Scientific Reports 4, 6838, 2014 | 23 | 2014 |
| Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect G Gupta, H Lin, A Bansil, MBA Jalil, CY Huang, WF Tsai, G Liang Applied Physics Letters 104 (3), 032410, 2014 | 19 | 2014 |
| Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ J Deng, G Liang, G Gupta Scientific Reports 7, 16562, 2017 | 18 | 2017 |
| Role of acoustic phonons in Bi2Se3 topological insulator slabs: A quantum transport investigation G Gupta, H Lin, A Bansil, MBA Jalil, G Liang Phys. Rev. B 89 (24), 245419, 2014 | 16 | 2014 |
| Performance evaluation of electro-optic effect based graphene transistors G Gupta, MBA Jalil, B Yu, G Liang Nanoscale 4 (20), 6365-6373, 2012 | 14 | 2012 |
| Transition Metal Dichalcogenides-Based Spintronic Devices H Lin, WF Tsai, CY Huang, HT Jeng, TR Chang, G Gupta, G Liang, ... US Patent 2017/0098760 A1, 2017 | 7 | 2017 |
| Effect of Band-Alignment Operation on Carrier Transport in Bi2Se3 Topological Insulator G Gupta, MBA Jalil, G Liang Scientific Reports 4, 6220, 2014 | 7 | 2014 |
| Read circuit for magnetic tunnel junction (MTJ) memory G Gupta, Z Wu US Patent US10867652B2, 2020 | 6 | 2020 |
| Effect of phase transition on quantum transport in group-IV two-dimensional U-shape device MA Sadi*, G Gupta*, G Liang Journal of Applied Physics 116 (115), 153708, 2014 | 6 | 2014 |
| Memory device with superparamagnetic layer G Gupta, WJ Gallagher US Patent US11031544B2, 2020 | 4 | 2020 |
| Switching based Spin Transfer Torque Oscillator with zero-bias field and large tuning-ratio G Gupta, Z Zhu, G Liang arXiv preprint arXiv:1611.05169v3, 51, 2016 | 4 | 2016 |
| Read circuit for magnetic tunnel junction (mtj) memory G Gupta, Z Wu US Patent US11342016B2, 2022 | 3 | 2022 |
| Carrier transport in Bi2Se3 topological insulator slab G Gupta, H Lin, A Bansil, MBA Jalil, G Liang Physica E: Low-dimensional Systems and Nanostructures 74, 10-19, 2015 | 3 | 2015 |
| Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects? G Gupta, MBA Jalil, G Liang Electron Devices Meeting (IEDM), 2013 IEEE International, 32.5.1 - 32.5.4, 2013 | 3 | 2013 |
| Read techniques for a magnetic tunnel junction (MTJ) memory device with a current mirror G Gupta, CT Lin, K Chiang US Patent US10839879B2, 2020 | 2 | 2020 |
| Electronic structure of graphene based materials and their carrier transport properties W Huang, A Nurbawono, M Zeng, G Gupta, G Liang Graphene Science Handbook 2, 401–421, 2016 | 2 | 2016 |
| Amplitude Shift Keying Demodulator in 180 nm CMOS node with 100% Modulation Rate G Gupta https://www.researchgate.net/, 2012 | 2* | 2012 |
| Applications of Graphene Based Materials in Electronic Devices G Gupta, M Zeng, A Nurbawono, W Huang, G Liang Graphene Science Handbook 6, 279–298, 2016 | 1 | 2016 |
| Contact Effects in thin 3D-Topological Insulators: How does the current flow? G Gupta, MBA Jalil, G Liang Scientific Reports 5, 9479, 2015 | 1 | 2015 |
| Read circuit for magnetic tunnel junction (MTJ) memory G Gupta, Z Wu US Patent 11,862,218, 2024 | | 2024 |
Gengchiau LiangNational Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw
