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Qingyun Xie
Qingyun Xie
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Year
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
K Hoo Teo, Y Zhang, N Chowdhury, S Rakheja, R Ma, Q Xie, E Yagyu, ...
Journal of Applied Physics 130 (16), 2021
1442021
P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
1092019
Regrowth-free GaN-based complementary logic on a Si substrate
N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios
IEEE Electron Device Letters 41 (6), 820-823, 2020
1042020
First demonstration of a self-aligned GaN p-FET
N Chowdhury, Q Xie, M Yuan, NS Rajput, P Xiang, K Cheng, HW Then, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2019
442019
Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷
N Chowdhury, Q Xie, T Palacios
IEEE Electron Device Letters 43 (3), 358-361, 2022
312022
Field-induced acceptor ionization in enhancement-mode GaN p-MOSFETs
N Chowdhury, Q Xie, J Niroula, NS Rajput, K Cheng, HW Then, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2020
272020
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si
N Chowdhury, Q Xie, T Palacios
IEEE Electron Device Letters 43 (4), 545-548, 2022
252022
Effectiveness of oxide trench array as a passive temperature compensation structure in AlN-on-silicon micromechanical resonators
Q Xie, N Wang, C Sun, AB Randles, P Singh, X Zhang, Y Gu
Applied Physics Letters 110 (8), 083501, 2017
192017
NbN-Gated GaN Transistor Technology for Applications in Quantum Computing Systems
Q Xie, N Chowdhury, A Zubair, M Sánchez Lozano, J Lemettinen, ...
2021 Symposium on VLSI Technology, 1-2, 2021
162021
GaN ring oscillators operational at 500° C based on a GaN-on-Si platform
M Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ...
IEEE Electron Device Letters 43 (11), 1842-1845, 2022
152022
A passively temperature-compensated dual-frequency AlN-on-silicon resonator for accurate pressure sensing
Q Xie, N Wang, C Sun, AB Randles, P Singh, X Zhang, Y Gu
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems …, 2017
142017
GaN memory operational at 300 C
M Yuan, Q Xie, J Niroula, N Chowdhury, T Palacios
IEEE Electron Device Letters 43 (12), 2053-2056, 2022
122022
High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology
M Yuan, Q Xie, J Niroula, MF Isamotu, NS Rajput, N Chowdhury, ...
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022
112022
1 kV GaN-on-Si quasi-vertical Schottky rectifier
Y Qin, M Xiao, R Zhang, Q Xie, T Palacios, B Wang, Y Ma, I Kravchenko, ...
IEEE Electron Device Letters, 2023
102023
Enhancement-mode GaN transistor technology for harsh environment operation
M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ...
IEEE Electron Device Letters, 2023
102023
Performance estimation of GaN CMOS technology
N Chowdhury, J Jung, Q Xie, M Yuan, K Cheng, T Palacios
2021 Device Research Conference (DRC), 1-2, 2021
92021
Highly scaled GaN complementary technology on a silicon substrate
Q Xie, M Yuan, J Niroula, B Sikder, JA Greer, NS Rajput, N Chowdhury, ...
IEEE Transactions on Electron Devices 70 (4), 2121-2128, 2023
82023
Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform
Q Xie, M Yuan, J Niroula, JA Greer, NS Rajput, N Chowdhury, T Palacios
2022 International Electron Devices Meeting (IEDM), 35.3.1-35.3.4, 2022
82022
Semiconductor device with linear parasitic capacitance
T Palacios, N Chowdhury, Q Xie
US Patent App. 17/225,531, 2021
82021
AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor with Improved Linearity
MT Azad, T Hossain, B Sikder, Q Xie, M Yuan, E Yagyu, KH Teo, ...
IEEE Transactions on Electron Devices, 2023
52023
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