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Yury Illarionov (Юрий Юрьевич Илларионов)
Yury Illarionov (Юрий Юрьевич Илларионов)
Ioffe Physical-Technical Institute of the Russian Academy of Sciences and TU Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D materials 3, 035004, 2016
1492016
Long-term stability and reliability of black phosphorus field-effect transistors
YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ...
ACS nano 10 (10), 9543-9549, 2016
1432016
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature Communications 11, 3385, 2020
1302020
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
Nature Electronics 2 (6), 230-235, 2019
932019
Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation
YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser
IEEE Electron Device Letters, 2017
752017
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
722021
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4, 786-799, 2021
632021
Engineering field effect transistors with 2D semiconducting channels: Status and prospects
X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza
Advanced Functional Materials 30 (18), 1901971, 2020
512020
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
Y Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ...
npj 2D Materials and Applications 1 (1), 1-7, 2017
482017
Bias-temperature Instability in Single-layer Graphene Field-effect Transistors
Y Illarionov, M Waltl, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, ...
Applied Physics Letters 105 (14), 143507, 2014
482014
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
432017
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
392018
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
362018
Hot-carrier degradation and bias-temperature instability in single-layer graphene field-effect transistors: Similarities and differences
Y Illarionov, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, T Grasser
IEEE Transactions on electron devices 62 (11), 3876-3881, 2015
282015
Dielectric Properties of Ultrathin CaF2 Ionic Crystals
C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ...
Advanced Materials, 2002525, 2020
272020
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
MI Vexler, SE Tyaginov, YY Illarionov, YK Sing, AD Shenp, VV Fedorov
Semiconductors 47 (5), 686-694, 2013
242013
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental
B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ...
IEEE Transactions on Electron Devices 66 (1), 232-240, 2018
222018
Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes
YY Illarionov, MI Vexler, SM Suturin, VV Fedorov, NS Sokolov
Journal of applied Physics, 2014
202014
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
2D Materials 6 (4), 045004, 2019
162019
Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets
X Jing, E Panholzer, X Song, E Grustan-Gutierrez, F Hui, Y Shi, ...
Nano Energy 30, 494-502, 2016
162016
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