Carlo De Santi
Carlo De Santi
Assistant professor, UNIPD
Verified email at
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Cited by
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate
I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ...
IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016
GaN-based power devices: Physics, reliability, and perspectives
M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 181101, 2021
Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate
M Meneghini, C De Santi, T Ueda, T Tanaka, D Ueda, E Zanoni, ...
IEEE Electron device letters 33 (3), 375-377, 2012
Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs
I Rossetto, M Meneghini, A Tajalli, S Dalcanale, C De Santi, P Moens, ...
IEEE transactions on electron devices 64 (9), 3734-3739, 2017
Reliability and failure analysis in power GaN-HEMTs: An overview
M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017
Role of defects in the thermal droop of InGaN-based light emitting diodes
C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ...
Journal of Applied Physics 119 (9), 094501, 2016
Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy
M Meneghini, C De Santi, N Trivellin, K Orita, S Takigawa, T Tanaka, ...
Applied Physics Letters 99 (9), 093506, 2011
Defect-related degradation of AlGaN-based UV-B LEDs
D Monti, M Meneghini, C De Santi, G Meneghesso, E Zanoni, J Glaab, ...
IEEE Transactions on Electron Devices 64 (1), 200-205, 2016
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
G Meneghesso, M Meneghini, A Stocco, D Bisi, C De Santi, I Rossetto, ...
Microelectronic engineering 109, 257-261, 2013
Laser-based lighting: experimental analysis and perspectives
N Trivellin, M Yushchenko, M Buffolo, C De Santi, M Meneghini, ...
Materials 10 (10), 1166, 2017
Long-term degradation mechanisms of mid-power LEDs for lighting applications
M Buffolo, C De Santi, M Meneghini, D Rigon, G Meneghesso, E Zanoni
Microelectronics Reliability 55 (9-10), 1754-1758, 2015
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ...
Photonics Research 5 (2), A44-A51, 2017
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
M Meneghini, C De Santi, A Tibaldi, M Vallone, F Bertazzi, G Meneghesso, ...
Journal of Applied Physics 127 (21), 211102, 2020
A physical model for the reverse leakage current in (In, Ga) N/GaN light-emitting diodes based on nanowires
M Musolino, D Van Treeck, A Tahraoui, L Scarparo, C De Santi, ...
Journal of Applied Physics 119 (4), 044502, 2016
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects
M La Grassa, M Meneghini, C De Santi, M Mandurrino, M Goano, ...
Microelectronics Reliability 55 (9-10), 1775-1778, 2015
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications
C De Santi, M Meneghini, G Meneghesso, E Zanoni
IET Power Electronics 11 (4), 668-674, 2018
GaN-based laser wireless power transfer system
C De Santi, M Meneghini, A Caria, E Dogmus, M Zegaoui, F Medjdoub, ...
Materials 11 (1), 153, 2018
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