Reaction of BCl3 with H-and Cl-terminated Si (1 0 0) as a pathway for selective, monolayer doping through wet chemistry D Silva-Quinones, C He, RE Butera, GT Wang, AV Teplyakov Applied surface science 533, 146907, 2020 | 30 | 2020 |
STM-induced desorption and lithographic patterning of Cl–Si (100)-(2× 1) KJ Dwyer, M Dreyer, RE Butera The Journal of Physical Chemistry A 123 (50), 10793-10803, 2019 | 30 | 2019 |
Atomic-precision advanced manufacturing for Si quantum computing E Bussmann, RE Butera, JHG Owen, JN Randall, SM Rinaldi, ... MRS Bulletin 46, 607-615, 2021 | 29 | 2021 |
Phonon-activated electron-stimulated desorption of halogens from BR Trenhaile, VN Antonov, GJ Xu, A Agrawal, AW Signor, RE Butera, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125318, 2006 | 23 | 2006 |
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100) KJ Dwyer, S Baek, A Farzaneh, M Dreyer, JR Williams, RE Butera ACS Applied Materials & Interfaces 13 (34), 41275-41286, 2021 | 21 | 2021 |
Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride H Chi, Y Ou, TB Eldred, W Gao, S Kwon, J Murray, M Dreyer, RE Butera, ... Nature Communications 14 (1), 3222, 2023 | 20 | 2023 |
Atomic processes during Cl supersaturation etching of CM Aldao, A Agrawal, RE Butera, JH Weaver Physical Review B—Condensed Matter and Materials Physics 79 (12), 125303, 2009 | 20 | 2009 |
AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al MS Radue, S Baek, A Farzaneh, KJ Dwyer, Q Campbell, AD Baczewski, ... The Journal of Physical Chemistry C 125 (21), 11336-11347, 2021 | 18 | 2021 |
Cl Insertion on : Etching Under Conditions of Supersaturation A Agrawal, RE Butera, JH Weaver Physical review letters 98 (13), 136104, 2007 | 16 | 2007 |
Effect of Sn Doping on Surface States of Bi2Se3 Thin Films GM Stephen, I Naumov, S Tyagi, OA Vail, JE DeMell, M Dreyer, RE Butera, ... The Journal of Physical Chemistry C 124 (49), 27082-27088, 2020 | 15 | 2020 |
Reaction of Hydrazine with Solution-and Vacuum-Prepared Selectively Terminated Si (100) Surfaces: Pathways to the Formation of Direct Si–N Bonds D Silva-Quinones, C He, KJ Dwyer, RE Butera, GT Wang, AV Teplyakov Langmuir 36 (43), 12866-12876, 2020 | 13 | 2020 |
The stability of Cl-, Br-, and I-passivated Si (100)-(2× 1) in ambient environments for atomically-precise pattern preservation E Frederick, KJ Dwyer, GT Wang, S Misra, RE Butera Journal of Physics: Condensed Matter 33 (44), 444001, 2021 | 11 | 2021 |
Solution chemistry to control boron-containing monolayers on silicon: Reactions of boric acid and 4-fluorophenylboronic acid with H-and Cl-terminated Si (100) D Silva-Quinones, RE Butera, GT Wang, AV Teplyakov Langmuir 37 (23), 7194-7202, 2021 | 9 | 2021 |
Scanning tunneling Andreev microscopy of titanium nitride thin films WT Liao, TP Kohler, KD Osborn, RE Butera, CJ Lobb, FC Wellstood, ... Physical Review B 100 (21), 214505, 2019 | 8 | 2019 |
On local sensing of spin Hall effect in tungsten films by using STM-based measurements T Xie, M Dreyer, D Bowen, D Hinkel, RE Butera, C Krafft, I Mayergoyz IEEE Transactions on Nanotechnology 17 (5), 914-919, 2018 | 8 | 2018 |
Heterogeneous nucleation of pits via step pinning during Si (100) homoepitaxy EN Yitamben, RE Butera, BS Swartzentruber, RJ Simonson, S Misra, ... New Journal of Physics 19 (11), 113023, 2017 | 7 | 2017 |
Si epitaxy on Cl-Si (100) A Farzaneh, RE Butera Applied Surface Science 589, 152877, 2022 | 6 | 2022 |
A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect T Xie, M Dreyer, D Bowen, D Hinkel, RE Butera, C Krafft, I Mayergoyz AIP Advances 7 (12), 2017 | 6 | 2017 |
Adsorbate-mediated step transformations and terrace rearrangement of RE Butera, Y Suwa, T Hashizume, JH Weaver Physical Review B—Condensed Matter and Materials Physics 80 (19), 193307, 2009 | 6 | 2009 |
Reaction pathways of BCl for acceptor delta-doping of silicon Q Campbell, KJ Dwyer, S Baek, AD Baczewski, RE Butera, S Misra arXiv preprint arXiv:2201.11682, 2022 | 5 | 2022 |