| Semiconductor photodetector J Hegarty, LP Barry, HAF Folliot, JC O'gorman US Patent 7,557,368, 2009 | 257 | 2009 |
| High-gain and low-threshold InAs quantum-dot lasers on InP P Caroff, C Paranthoen, C Platz, O Dehaese, H Folliot, N Bertru, C Labbe, ... Applied Physics Letters 87 (24), 2005 | 171 | 2005 |
| Tuned red NIR phosphorescence of polyurethane hybrid composites embedding metallic nanoclusters for oxygen sensing M Amela-Cortes, S Paofai, S Cordier, H Folliot, Y Molard Chemical Communications 51 (38), 8177-8180, 2015 | 81 | 2015 |
| Structural and electronic properties of BAs and BxGa1− xAs, BxIn1− xAs alloys N Chimot, J Even, H Folliot, S Loualiche Physica B: Condensed Matter 364 (1-4), 263-272, 2005 | 81 | 2005 |
| Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser C Paranthoen, C Platz, G Moreau, N Bertru, O Dehaese, A Le Corre, ... Journal of crystal growth 251 (1-4), 230-235, 2003 | 75 | 2003 |
| Two-photon-induced photoconductivity enhancement in semiconductor microcavities: a theoretical investigation H Folliot, M Lynch, AL Bradley, T Krug, LA Dunbar, J Hegarty, ... JOSA B 19 (10), 2396-2402, 2002 | 63 | 2002 |
| Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities H Folliot, M Lynch, AL Bradley, LA Dunbar, J Hegarty, JF Donegan, ... Applied Physics Letters 80 (8), 1328-1330, 2002 | 54 | 2002 |
| Design and Integration in Electro‐Optic Devices of Highly Efficient and Robust Red‐NIR Phosphorescent Nematic Hybrid Liquid Crystals Containing [Mo6I8 (OCOCnF2n+ 1) 6] 2−(n= 1 … M Prévôt, M Amela‐Cortes, SK Manna, R Lefort, S Cordier, H Folliot, ... Advanced Functional Materials 25 (31), 4966-4975, 2015 | 53 | 2015 |
| Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission P Miska, C Paranthoen, J Even, O Dehaese, H Folliot, N Bertru, ... Semiconductor science and technology 17 (10), L63, 2002 | 53 | 2002 |
| Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots C Robert, C Cornet, P Turban, T Nguyen Thanh, MO Nestoklon, J Even, ... Physical Review B—Condensed Matter and Materials Physics 86 (20), 205316, 2012 | 50 | 2012 |
| Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection C Platz, C Paranthoën, P Caroff, N Bertru, C Labbé, J Even, O Dehaese, ... Semiconductor science and technology 20 (5), 459, 2005 | 49 | 2005 |
| Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ... Applied Physics Letters 98 (25), 2011 | 47 | 2011 |
| Achievement of high density InAs quantum dots on InP (311) B substrate emitting at 1.55 µm P Caroff, N Bertru, A Le Corre, O Dehaese, T Rohel, I Alghoraibi, H Folliot, ... Japanese Journal of Applied Physics 44 (8L), L1069, 2005 | 47 | 2005 |
| Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP H Folliot, S Loualiche, B Lambert, V Drouot, A Le Corre Physical Review B 58 (16), 10700, 1998 | 46 | 1998 |
| Approach to wetting-layer-assisted lateral coupling of quantum dots C Cornet, C Platz, P Caroff, J Even, C Labbé, H Folliot, A Le Corre, ... Physical Review B—Condensed Matter and Materials Physics 72 (3), 035342, 2005 | 45 | 2005 |
| Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range M Guézo, S Loualiche, J Even, A Le Corre, H Folliot, C Labbé, O Dehaese, ... Applied Physics Letters 82 (11), 1670-1672, 2003 | 45 | 2003 |
| Room temperature photoluminescence of high density (In, Ga) As/GaP quantum dots T Nguyen Thanh, C Robert, C Cornet, M Perrin, JM Jancu, N Bertru, ... Applied Physics Letters 99 (14), 2011 | 37 | 2011 |
| Quantitative investigations of optical absorption in InAs∕ InP (311) B quantum dots emitting at 1.55 μm wavelength C Cornet, C Labbé, H Folliot, N Bertru, O Dehaese, J Even, A Le Corre, ... Applied physics letters 85 (23), 5685-5687, 2004 | 37 | 2004 |
| Impact of the capping layers on lateral confinement in InAs∕ InP quantum dots for 1.55 μm laser applications studied by magnetophotoluminescence C Cornet, C Levallois, P Caroff, H Folliot, C Labbé, J Even, A Le Corre, ... Applied Physics Letters 87 (23), 2005 | 32 | 2005 |
| Time-resolved pump probe of 1.55 μm InAs∕ InP quantum dots under high resonant excitation C Cornet, C Labbé, H Folliot, P Caroff, C Levallois, O Dehaese, J Even, ... Applied Physics Letters 88 (17), 2006 | 31 | 2006 |
Alain Le CorreVerified email at insa-rennes.fr
