FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 114 | 2020 |
Demonstration of a p-type ferroelectric FET with immediate read-after-write capability D Kleimaier, H Mulaosmanovic, S Dünkel, S Beyer, S Soss, S Slesazeck, ... IEEE Electron Device Letters 42 (12), 1774-1777, 2021 | 43 | 2021 |
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 39 | 2020 |
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read H Mulaosmanovic, D Kleimaier, S Dünkel, S Beyer, T Mikolajick, ... Nanoscale 13 (38), 16258-16266, 2021 | 37 | 2021 |
Degradation kinetics during oxygen electrocatalysis on perovskite-based surfaces in alkaline media DS Bick, TB Krebs, D Kleimaier, AF Zurhelle, G Staikov, R Waser, I Valov Langmuir 34 (4), 1347-1352, 2018 | 19 | 2018 |
Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs H Mulaosmanovic, S Dünkel, D Kleimaier, A el Kacimi, S Beyer, ET Breyer, ... IEEE Transactions on Electron Devices 68 (9), 4773-4779, 2021 | 10 | 2021 |
22FDSOI device towards RF and mmWave applications Z Zhao, S Lehmann, WL Oo, AK Sahoo, S Syed, QH Le, DK Huynh, ... 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 7 | 2021 |
Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines Y Xu, Z Zhao, Y Xiao, T Yu, H Mulaosmanovic, D Kleimaier, S Duenkel, ... Science Advances 10 (3), eadk1525, 2024 | 2 | 2024 |
Powering disturb-free reconfigurable computing and tunable analog electronics with dual-port ferroelectric FET Z Zhao, S Deng, S Chatterjee, Z Jiang, MS Islam, Y Xiao, Y Xu, ... ACS Applied Materials & Interfaces 15 (47), 54602-54610, 2023 | 2 | 2023 |
Reconfigurable complementary metal oxide semiconductor device and method S Dünkel, DM Kleimaier US Patent 11,817,457, 2023 | 1 | 2023 |
Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFET K Sloyan, F Ravaux, Z Zhao, D Kleimaier, D Utess, S Lehmann, Y Andee, ... IEEE Transactions on Electron Devices 68 (7), 3230-3237, 2021 | 1 | 2021 |
Ferroelectric field-effect transistors with a hybrid well S Dünkel, DM Kleimaier, Z Zhixing, H Mulaosmanovic US Patent App. 17/960,245, 2024 | | 2024 |
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate Z Zhao, S Woo, KA Aabrar, SG Kirtania, Z Jiang, S Deng, Y Xiao, ... arXiv preprint arXiv:2403.04981, 2024 | | 2024 |
Reconfigurable complementary metal oxide semiconductor device and method S Dünkel, DM Kleimaier US Patent App. 18/452,637, 2023 | | 2023 |
Stress layout optimization for device performance D Utess, Z Zhixing, DM Kleimaier, IA Saadat, F Ravaux US Patent App. 18/127,206, 2023 | | 2023 |
Stress layout optimization for device performance D Utess, Z Zhixing, DM Kleimaier, IA Saadat, F Ravaux US Patent 11,664,432, 2023 | | 2023 |
Editorial 2021 Electron Devices Society George E. Smith Award JA del Alamo IEEE Electron Device Letters 43 (8), 1168-1168, 2022 | | 2022 |