| Using microchannels to cool microprocessors: a transmission-line-matrix study S Belhardj, S Mimouni, A Saidane, M Benzohra Microelectronics Journal 34 (4), 247-253, 2003 | 59 | 2003 |
| Glass transition investigated by a combined protocol using thermostimulated depolarization currents and differential scanning calorimetry L Delbreilh, M Negahban, M Benzohra, C Lacabanne, J Saiter Journal of thermal analysis and calorimetry 96 (3), 865-871, 2009 | 27 | 2009 |
| Transmission line matrix modelling of thermal injuries to skin SA Bellia, A Saidane, A Hamou, M Benzohra, JM Saiter Burns 34 (5), 688-697, 2008 | 23 | 2008 |
| A transmission line matrix (TLM) study of hyperbolic heat conduction in biological materials A Saidane, S Aliouat, M Benzohra, M Ketata Journal of food engineering 68 (4), 491-496, 2005 | 23 | 2005 |
| Dimensional soft tissue thermal injury analysis using transmission line matrix (TLM) method SA Bellia, A Saidane, M Benzohra, JM Saiter, A Hamou International Journal of Numerical Modelling: Electronic Networks, Devices …, 2008 | 16 | 2008 |
| Electrically active defects in BF2+ implanted and germanium preamorphized silicon F Boussaid, M Benzohra, F Olivie, D Alquier, A Martinez Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 15 | 1998 |
| Improvement of oxide thickness determination on MOS structures using capacitance–voltage measurements at high frequencies L Soliman, E Duval, M Benzohra, E Lheurette, K Ketata, M Ketata Materials Science in Semiconductor Processing 4 (1-3), 163-166, 2001 | 12 | 2001 |
| Ageing characterization to determine the life duration of different LDPE based devices used for greenhouse roof B Youssef, M Benzohra, JM Saiter, A Dehbi, A Hamou International Symposium on High Technology for Greenhouse System Management …, 2007 | 11 | 2007 |
| Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation A Dusch, J Marcon, K Masmoudi, F Olivie, M Benzohra, K Ketata, ... Materials Science and Engineering: B 80 (1-3), 65-67, 2001 | 10 | 2001 |
| Thermal behavior Spice study of 6H-SiC NMOS transistors D Chalabi, A Saïdane, M Idrissi-Benzohra, M Benzohra Microelectronics journal 40 (6), 891-896, 2009 | 8 | 2009 |
| Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation M Benzohra, F Olivie, M Idrissi-Benzohra, K Ketata, M Ketata Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 8 | 2002 |
| Mesures de la durée de vie des porteurs, dans la base et l'émetteur de cellules solaires au silicium, à partir des photoréponses transitoires à une impulsion laser G Gasset, M Benzohra, A Johan, D Bielle-Daspet Revue de Physique Appliquée 14 (1), 209-221, 1979 | 8 | 1979 |
| A Comparative Study on Electrical Characteristics of MOS (Si0. 5Ge0. 5) and MOS (4H-SiC) Transistors in 130nm Technology with BSIM3v3 Model'' M Hebali, D Berbara, M Benzohra, D Chalabi, A Saïdane International Journal of Advances in Computer and Electronics Engineering 3 …, 2018 | 6 | 2018 |
| On the use of the matrix pencil method for deep level transient spectroscopy: MP-DLTS F Boussaid, F Olivié, M Benzohra, A Martinez IEEE Transactions on Instrumentation and Measurement 47 (3), 692-697, 1998 | 6 | 1998 |
| Electronic defect levels in ultra-shallow p+ n-junctions formed by low-energy B ion implantation into Ge-preamorphized silicon M Benzohra, F Olivie, F Boussaid, DAD Alquier, AMA Martinez Japanese journal of applied physics 36 (7R), 4346, 1997 | 6 | 1997 |
| A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model M Hebali, M Bennaoum, M Berka, AB Bey, M Benzohra, D Chalabi, ... Journal of Electrical Engineering 70 (2), 145-151, 2019 | 5 | 2019 |
| Magnetic susceptibility of P+ N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised M Abdelaoui, M Idrissi-Benzohra, E Joubert, M Benzohra, F Olivié, ... Materials Science and Engineering: B 102 (1-3), 370-375, 2003 | 5 | 2003 |
| Simplex-deep level transient spectroscopy: A new method of transient capacitance signal processing M Benzohra, NMR Hbib Japanese journal of applied physics 35 (5R), 2709, 1996 | 5 | 1996 |
| Changes in lifetime and diffusion length due to the electron and proton bombardment of silicon solar cells D Bielle-Daspet, L Castaner, G Gasset, M Benzohra Solar Cells 2 (1), 31-42, 1980 | 5 | 1980 |
| MOSiC (3C, 4H and 6H) Transistors 130nm by BSIM3v3 Model in Low Voltage and Low Power M Hebali, D Berbara, M Benzohra, D Chalabi, A Saïdane, AB Bey Journal of Engineering Science and Technology Review 10 (5), 195-198, 2017 | 4 | 2017 |
Mourad HebaliUniversity Mustapha Stambouli of MascaraVerified email at univ-mascara.dz
