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Piotr Kruszewski
Piotr Kruszewski
Adiunkt, IWC PAN
Verified email at unipress.waw.pl
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Cited by
Year
ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions
E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ...
Journal of Applied Physics 105 (12), 2009
1402009
AlGaN/GaN HEMT structures on ammono bulk GaN substrate
P Kruszewski, P Prystawko, I Kasalynas, A Nowakowska-Siwinska, ...
Semiconductor Science and Technology 29 (7), 075004, 2014
702014
Vertically stacked non-volatile memory devices–material considerations
M Godlewski, E Guziewicz, J Szade, A Wˇjcik-Głodowska, T Krajewski, ...
Microelectronic Engineering 85 (12), 2434-2438, 2008
512008
Energy state distributions of the Pb centers at the (100),(110), and (111) Si∕ SiO2 interfaces investigated by Laplace deep level transient spectroscopy
L Dobaczewski, S Bernardini, P Kruszewski, PK Hurley, VP Markevich, ...
Applied Physics Letters 92 (24), 2008
372008
Crystal growth of HVPE-GaN doped with germanium
M Iwinska, N Takekawa, VY Ivanov, M Amilusik, P Kruszewski, ...
Journal of Crystal Growth 480, 102-107, 2017
302017
Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition
TA Krajewski, G Luka, S Gieraltowska, AJ Zakrzewski, PS Smertenko, ...
Applied Physics Letters 98 (26), 2011
292011
Electrical parameters of ZnO films and ZnO-based junctions obtained by atomic layer deposition
TA Krajewski, G Luka, L Wachnicki, AJ Zakrzewski, BS Witkowski, ...
Semiconductor science and technology 26 (8), 085013, 2011
242011
AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
P Sai, DB But, I Yahniuk, M Grabowski, M Sakowicz, P Kruszewski, ...
Semiconductor Science and Technology 34 (2), 024002, 2019
202019
Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate
P Kruszewski, P Prystawko, M Grabowski, T Sochacki, A Sidor, ...
Materials Science in Semiconductor Processing 96, 132-136, 2019
172019
Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
G Cywiński, I Yahniuk, P Kruszewski, M Grabowski, ...
Applied Physics Letters 112 (13), 2018
172018
Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors
F Giannazzo, G Fisichella, G Greco, E Schilir˛, I Deretzis, R Lo Nigro, ...
physica status solidi (a) 215 (10), 1700653, 2018
162018
Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
E Schilir˛, F Giannazzo, C Bongiorno, S Di Franco, G Greco, F Roccaforte, ...
Materials Science in Semiconductor Processing 97, 35-39, 2019
152019
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications
G Cywiński, K Szkudlarek, P Kruszewski, I Yahniuk, S Yatsunenko, ...
Journal of Vacuum Science & Technology B 34 (2), 2016
132016
Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes
G Cywiński, K Szkudlarek, P Kruszewski, I Yahniuk, S Yatsunenko, ...
Applied Physics Letters 109 (3), 2016
122016
Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies
TA Krajewski, P Stallinga, E Zielony, K Goscinski, P Kruszewski, ...
Journal of Applied Physics 113 (19), 2013
122013
Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
I Grigelionis, J Jorudas, V Jakštas, V Janonis, I Kašalynas, P Prystawko, ...
Materials Science in Semiconductor Processing 93, 280-283, 2019
102019
Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2░‐off silicon carbide substrates
P Kruszewski, M Grabowski, P Prystawko, A Nowakowska‐Siwinska, ...
physica status solidi (a) 214 (4), 1600376, 2017
92017
Vertical schottky diodes grown on low-dislocation density bulk GaN substrate
P Kruszewski, J Jasinski, T Sochacki, M Bockowski, R Jachymek, ...
Int. Workshop Nitride Semiconductor, 2014
92014
Electron-and hole-related electrical activity of InAs/GaAs quantum dots
P Kruszewski, L Dobaczewski, VP Markevich, C Mitchell, M Missous, ...
Physica B: Condensed Matter 401, 580-583, 2007
92007
Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at temperatures above 80 k
I Grigelionis, V Jakštas, V Janonis, I Kašalynas, P Prystawko, ...
physica status solidi (b) 255 (5), 1700421, 2018
82018
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