Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013 | 435 | 2013 |

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model F Bertazzi, M Moresco, E Bellotti Journal of Applied Physics 106 (6), 063718, 2009 | 120 | 2009 |

A numerical study of Auger recombination in bulk InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 97 (23), 231118, 2010 | 101 | 2010 |

Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ... physica status solidi (a) 212 (5), 947-953, 2015 | 98 | 2015 |

Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and *ab initio* calculationsM Goano, F Bertazzi, M Penna, E Bellotti Journal of Applied Physics 102 (8), 083709, 2007 | 93 | 2007 |

Numerical analysis of indirect Auger transitions in InGaN F Bertazzi, M Goano, E Bellotti Applied Physics Letters 101 (1), 011111, 2012 | 86 | 2012 |

Alloy scattering in AlGaN and InGaN: A numerical study E Bellotti, F Bertazzi, M Goano Journal of Applied Physics 101 (12), 123706, 2007 | 72 | 2007 |

Role of defects in the thermal droop of InGaN-based light emitting diodes C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ... Journal of Applied Physics 119 (9), 094501, 2016 | 70 | 2016 |

Simulation of quantum dot solar cells including carrier intersubband dynamics and transport M Gioannini, AP Cedola, N Di Santo, F Bertazzi, F Cappelluti IEEE Journal of Photovoltaics 3 (4), 1271-1278, 2013 | 68 | 2013 |

A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section M Goano, F Bertazzi, P Caravelli, G Ghione, TA Driscoll IEEE Transactions on Microwave Theory and Techniques 49 (9), 1573-1580, 2001 | 65 | 2001 |

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Applied Physics Letters 103 (8), 081106, 2013 | 56 | 2013 |

Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti Solid-state electronics 52 (11), 1796-1801, 2008 | 55 | 2008 |

A numerical study of carrier impact ionization in Al_{x}Ga_{1−}_{x}NE Bellotti, F Bertazzi Journal of Applied Physics 111 (10), 103711, 2012 | 53 | 2012 |

A numerical study of carrier impact ionization in Al_{x}Ga_{1−}_{x}NE Bellotti, F Bertazzi Journal of Applied Physics 111 (10), 103711, 2012 | 53 | 2012 |

Electron and hole transport in bulk ZnO: A full band monte carlo study F Bertazzi, M Goano, E Bellotti Journal of electronic materials 36, 857-863, 2007 | 51 | 2007 |

Electron and hole transport in bulk ZnO: A full band monte carlo study F Bertazzi, M Goano, E Bellotti Journal of electronic materials 36, 857-863, 2007 | 51 | 2007 |

A fast reduced-order model for the full-wave FEM analysis of lossy inhomogeneous anisotropic waveguides F Bertazzi, OA Peverini, M Goano, G Ghione, R Orta, R Tascone IEEE transactions on microwave theory and techniques 50 (9), 2108-2114, 2002 | 49 | 2002 |

Full-band Monte Carlo simulation of HgCdTe APDs F Bertazzi, M Moresco, M Penna, M Goano, E Bellotti Journal of Electronic Materials 39, 912-917, 2010 | 41 | 2010 |

Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors M Vallone, M Mandurrino, M Goano, F Bertazzi, G Ghione, W Schirmacher, ... Journal of Electronic Materials 44, 3056-3063, 2015 | 39 | 2015 |

Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives M Meneghini, C De Santi, A Tibaldi, M Vallone, F Bertazzi, G Meneghesso, ... Journal of Applied Physics 127 (21), 211102, 2020 | 38 | 2020 |