Follow
Nian-Ke Chen
Title
Cited by
Cited by
Year
Monolayer II-VI semiconductors: A first-principles prediction
H Zheng, XB Li, NK Chen, SY Xie, WQ Tian, Y Chen, H Xia, SB Zhang, ...
Physical Review B 92 (11), 115307, 2015
2742015
Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
XB Li, NK Chen, XP Wang, HB Sun
Advanced Functional Materials 28 (44), 1803380, 2018
1512018
Determination of formation and ionization energies of charged defects in two-dimensional materials
D Wang, D Han, XB Li, SY Xie, NK Chen, WQ Tian, D West, HB Sun, ...
Physical review letters 114 (19), 196801, 2015
1162015
Novel Zn-doped SnO 2 hierarchical architectures: synthesis, characterization, and gas sensing properties
P Sun, L You, Y Sun, N Chen, X Li, H Sun, J Ma, G Lu
CrystEngComm 14 (5), 1701-1708, 2012
812012
First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer
SY Xie, XB Li, WQ Tian, NK Chen, XL Zhang, Y Wang, S Zhang, HB Sun
Physical Review B 90 (3), 035447, 2014
772014
High‐throughput screening for phase‐change memory materials
YT Liu, XB Li, H Zheng, NK Chen, XP Wang, XL Zhang, HB Sun, S Zhang
Advanced Functional Materials 31 (21), 2009803, 2021
642021
Crystalline liquid and rubber-like behavior in Cu nanowires
Y Yue, N Chen, X Li, S Zhang, Z Zhang, M Chen, X Han
Nano letters 13 (8), 3812-3816, 2013
562013
Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
YT Huang, NK Chen, ZZ Li, XP Wang, HB Sun, S Zhang, XB Li
InfoMat 4 (8), e12341, 2022
552022
Electric field analyses on monolayer semiconductors: the example of InSe
XP Wang, XB Li, NK Chen, JH Zhao, QD Chen, HB Sun
Physical Chemistry Chemical Physics 20 (10), 6945-6950, 2018
512018
Directional forces by momentumless excitation and order-to-order transition in peierls-distorted solids: the case of GeTe
NK Chen, XB Li, J Bang, XP Wang, D Han, D West, S Zhang, HB Sun
Physical Review Letters 120 (18), 185701, 2018
482018
Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization
NK Chen, XB Li, XP Wang, MJ Xia, SY Xie, HY Wang, Z Song, S Zhang, ...
Acta Materialia 90, 88-93, 2015
472015
A novel two-dimensional MgB 6 crystal: metal-layer stabilized boron kagome lattice
SY Xie, XB Li, WQ Tian, NK Chen, Y Wang, S Zhang, HB Sun
Physical Chemistry Chemical Physics 17 (2), 1093-1098, 2015
422015
Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory
XP Wang, XB Li, NK Chen, QD Chen, XD Han, S Zhang, HB Sun
Acta Materialia 136, 242-248, 2017
392017
Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus
D Wang, D Han, XB Li, NK Chen, D West, V Meunier, S Zhang, HB Sun
Physical Review B 96 (15), 155424, 2017
362017
Metal–insulator transition of Ge–Sb–Te superlattice: an electron counting model study
NK Chen, XB Li, XP Wang, SY Xie, WQ Tian, S Zhang, HB Sun
IEEE Transactions on Nanotechnology 17 (1), 140-146, 2017
342017
Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3
XP Wang, XB Li, NK Chen, B Chen, F Rao, S Zhang
Advanced Science 8 (13), 2004185, 2021
332021
Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy
NK Chen, XB Li, XP Wang, WQ Tian, S Zhang, HB Sun
Acta Materialia 143, 102-106, 2018
282018
Role of the nano amorphous interface in the crystallization of Sb 2 Te 3 towards non-volatile phase change memory: Insights from first principles
XP Wang, NK Chen, XB Li, Y Cheng, XQ Liu, MJ Xia, ZT Song, XD Han, ...
Physical Chemistry Chemical Physics 16 (22), 10810-10815, 2014
252014
Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport
D Wang, D Han, D West, NK Chen, SY Xie, WQ Tian, V Meunier, S Zhang, ...
NPJ Computational Materials 5 (1), 8, 2019
242019
Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change
YT Huang, NK Chen, ZZ Li, XB Li, XP Wang, QD Chen, HB Sun, S Zhang
Applied Physics Reviews 8 (3), 2021
202021
The system can't perform the operation now. Try again later.
Articles 1–20