Boris Hudec
Boris Hudec
Institute of Electrical Engineering, Slovak Academy of Sciences
Verified email at - Homepage
Cited by
Cited by
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Mitigating asymmetric nonlinear weight update effects in hardware neural network based on analog resistive synapse
CC Chang, PC Chen, T Chou, IT Wang, B Hudec, CC Chang, CM Tsai, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2017
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ...
Journal of Electroceramics 39, 21-38, 2017
3D resistive RAM cell design for high-density storage class memory—a review
B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fröhlich, ...
SCIENCE CHINA Information Sciences 59, 061403, 2016
Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor
B Hudec, K Hušeková, A Rosová, J Šoltýs, R Rammula, A Kasikov, ...
Journal of Physics D: Applied Physics 46 (38), 385304, 2013
Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors
L Aarik, T Arroval, R Rammula, H Mändar, V Sammelselg, B Hudec, ...
Thin Solid Films 565, 19-24, 2014
Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
B Hudec, K Hušeková, A Tarre, JH Han, S Han, A Rosová, W Lee, ...
Microelectronic Engineering 88 (7), 1514-1516, 2011
High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode
B Hudec, K Husekova, E Dobrocka, T Lalinsky, J Aarik, A Aidla, K Frohlich
IOP Conference Series: Materials Science and Engineering 8 (1), 012024, 2010
Challenges and opportunities toward online training acceleration using RRAM-based hardware neural network
CC Chang, JC Liu, YL Shen, T Chou, PC Chen, IT Wang, CC Su, MH Wu, ...
2017 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2017
Crossbar array of selector-less TaOx/TiO2 bilayer RRAM
CT Chou, B Hudec, CW Hsu, WL Lai, CC Chang, TH Hou
Microelectronics Reliability 55 (11), 2220-2223, 2015
Interface engineered HfO2-based 3D vertical ReRAM
B Hudec, IT Wang, WL Lai, CC Chang, P Jančovič, K Fröhlich, M Mičušík, ...
Journal of Physics D: Applied Physics 49 (21), 215102, 2016
SLIM: simultaneous logic-in-memory computing exploiting bilayer analog OxRAM devices
SK Kingra, V Parmar, CC Chang, B Hudec, TH Hou, M Suri
Scientific reports 10 (1), 2567, 2020
Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface
B Hudec, A Paskaleva, P Jančovič, J Dérer, J Fedor, A Rosová, ...
Thin Solid Films 563, 10-14, 2014
Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures
P Jančovič, B Hudec, E Dobročka, J Dérer, J Fedor, K Fröhlich
Applied surface science 312, 112-116, 2014
Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes
K Murakami, M Rommel, B Hudec, A Rosova, K Husekova, E Dobrocka, ...
ACS Applied Materials & Interfaces 6 (4), 2486-2492, 2014
Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes
J Aarik, B Hudec, K Hušeková, R Rammula, A Kasikov, T Arroval, ...
Semiconductor Science and Technology 27 (7), 074007, 2012
Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: growth of high-permittivity dielectrics with low leakage current
J Aarik, T Arroval, L Aarik, R Rammula, A Kasikov, H Mändar, B Hudec, ...
Journal of Crystal Growth 382, 61-66, 2013
Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer
B Hudec, K Hušeková, E Dobročka, J Aarik, R Rammula, A Kasikov, ...
J. Vac. Sci. Technol. B 29 (1), 2011
Influence of growth temperature on the structure and electrical properties of high‐permittivity TiO2 films in TiCl4‐H2O and TiCl4‐O3 atomic‐layer‐deposition …
T Arroval, L Aarik, R Rammula, H Mändar, J Aarik, B Hudec, K Hušeková, ...
physica status solidi (a) 211 (2), 425-432, 2014
TiO2-based metal-insulator-metal structures for future DRAM storage capacitors
K Fröhlich, B Hudec, M Ťapajna, K Hušeková, A Rosová, P Eliáš, J Aarik, ...
ECS Transactions 50 (13), 79, 2013
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