| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 539 | 2019 |
| Mitigating asymmetric nonlinear weight update effects in hardware neural network based on analog resistive synapse CC Chang, PC Chen, T Chou, IT Wang, B Hudec, CC Chang, CM Tsai, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2017 | 114 | 2017 |
| Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ... Journal of Electroceramics 39, 21-38, 2017 | 93 | 2017 |
| 3D resistive RAM cell design for high-density storage class memory—a review B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fröhlich, ... SCIENCE CHINA Information Sciences 59, 061403, 2016 | 65 | 2016 |
| Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor B Hudec, K Hušeková, A Rosová, J Šoltýs, R Rammula, A Kasikov, ... Journal of Physics D: Applied Physics 46 (38), 385304, 2013 | 40 | 2013 |
| Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors L Aarik, T Arroval, R Rammula, H Mändar, V Sammelselg, B Hudec, ... Thin Solid Films 565, 19-24, 2014 | 38 | 2014 |
| Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes B Hudec, K Hušeková, A Tarre, JH Han, S Han, A Rosová, W Lee, ... Microelectronic Engineering 88 (7), 1514-1516, 2011 | 37 | 2011 |
| High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode B Hudec, K Husekova, E Dobrocka, T Lalinsky, J Aarik, A Aidla, K Frohlich IOP Conference Series: Materials Science and Engineering 8 (1), 012024, 2010 | 37 | 2010 |
| Challenges and opportunities toward online training acceleration using RRAM-based hardware neural network CC Chang, JC Liu, YL Shen, T Chou, PC Chen, IT Wang, CC Su, MH Wu, ... 2017 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2017 | 34 | 2017 |
| Crossbar array of selector-less TaOx/TiO2 bilayer RRAM CT Chou, B Hudec, CW Hsu, WL Lai, CC Chang, TH Hou Microelectronics Reliability 55 (11), 2220-2223, 2015 | 34 | 2015 |
| Interface engineered HfO2-based 3D vertical ReRAM B Hudec, IT Wang, WL Lai, CC Chang, P Jančovič, K Fröhlich, M Mičušík, ... Journal of Physics D: Applied Physics 49 (21), 215102, 2016 | 28 | 2016 |
| Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface B Hudec, A Paskaleva, P Jančovič, J Dérer, J Fedor, A Rosová, ... Thin Solid Films 563, 10-14, 2014 | 25 | 2014 |
| SLIM: simultaneous logic-in-memory computing exploiting bilayer analog OxRAM devices SK Kingra, V Parmar, CC Chang, B Hudec, TH Hou, M Suri Scientific reports 10 (1), 2567, 2020 | 23 | 2020 |
| Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes K Murakami, M Rommel, B Hudec, A Rosova, K Husekova, E Dobrocka, ... ACS Applied Materials & Interfaces 6 (4), 2486-2492, 2014 | 23 | 2014 |
| Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures P Jančovič, B Hudec, E Dobročka, J Dérer, J Fedor, K Fröhlich Applied surface science 312, 112-116, 2014 | 22 | 2014 |
| Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes J Aarik, B Hudec, K Hušeková, R Rammula, A Kasikov, T Arroval, ... Semiconductor Science and Technology 27 (7), 074007, 2012 | 22 | 2012 |
| Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: growth of high-permittivity dielectrics with low leakage current J Aarik, T Arroval, L Aarik, R Rammula, A Kasikov, H Mändar, B Hudec, ... Journal of Crystal Growth 382, 61-66, 2013 | 19 | 2013 |
| Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer B Hudec, K Hušeková, E Dobročka, J Aarik, R Rammula, A Kasikov, ... J. Vac. Sci. Technol. B 29 (1), 2011 | 19 | 2011 |
| Influence of growth temperature on the structure and electrical properties of high‐permittivity TiO2 films in TiCl4‐H2O and TiCl4‐O3 atomic‐layer‐deposition … T Arroval, L Aarik, R Rammula, H Mändar, J Aarik, B Hudec, K Hušeková, ... physica status solidi (a) 211 (2), 425-432, 2014 | 18 | 2014 |
| TiO2-based metal-insulator-metal structures for future DRAM storage capacitors K Fröhlich, B Hudec, M Ťapajna, K Hušeková, A Rosová, P Eliáš, J Aarik, ... ECS Transactions 50 (13), 79, 2013 | 16 | 2013 |
Tuo-Hung (Alex) HouInstitute of Electronics; National Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw
