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Mirko Scholz
Mirko Scholz
PrincipalEngineer ESD Development
Verified email at infineon.com
Title
Cited by
Cited by
Year
T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology
D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
512007
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
M Scholz, S Thijs, D Linten, D Tremouilles, M Sawada, T Nakaei, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
502007
System Level ESD Protection
V Vashchenko, M Scholz
Springer International Publishing, 2014
442014
Understanding the optimization of sub-45nm FinFET devices for ESD applications
D Tremouilles, S Thijs, C Russ, J Schneider, C Duvvury, N Collaert, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
342007
Active-lite interposer for 2.5 & 3D integration
G Hellings, M Scholz, M Detalle, D Velenis, MP de ten Broeck, CR Neve, ...
2015 Symposium on VLSI Circuits (VLSI Circuits), T222-T223, 2015
322015
Next generation bulk FinFET devices and their benefits for ESD robustness
A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ...
2009 31st EOS/ESD Symposium, 1-10, 2009
322009
ESD on-wafer characterization: Is TLP still the right measurement tool?
M Scholz, D Linten, S Thijs, S Sangameswaran, M Sawada, T Nakaei, ...
IEEE Transactions on Instrumentation and Measurement 58 (10), 3418-3426, 2009
322009
HBM ESD robustness of GaN-on-Si Schottky diodes
SH Chen, A Griffoni, P Srivastava, D Linten, S Thijs, M Scholz, M Denis, ...
IEEE Transactions on Device and Materials Reliability 12 (4), 589-598, 2012
282012
A 4.5 kv hbm, 300 v cdm, 1.2 kv hmm esd protected dc-to-16.1 ghz wideband lna in 90 nm cmos
D Linten, S Thijs, M Okushima, M Scholz, J Borremans, M Dehan, ...
2009 31st EOS/ESD Symposium, 1-6, 2009
282009
Extreme voltage and current overshoots in HV snapback devices during HBM ESD stress
D Linten, V Vashchenko, M Scholz, P Jansen, D Lafonteese, S Thijs, ...
EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008
272008
Design methodology of FinFET devices that meet IC-Level HBM ESD targets
S Thijs, C Russ, D Tremouilles, A Griffoni, D Linten, M Scholz, N Collaert, ...
EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008
242008
Latchup in bulk FinFET technology
CT Dai, SH Chen, D Linten, M Scholz, G Hellings, R Boschke, J Karp, ...
2017 IEEE International Reliability Physics Symposium (IRPS), EL-1.1-EL-1.3, 2017
232017
SCCF—System to component level correlation factor
S Thijs, M Scholz, D Linten, A Griffoni, C Russ, W Stadler, D Lafonteese, ...
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 1-10, 2010
222010
ESD reliability issues in microelectromechanical systems (MEMS): A case study on micromirrors
S Sangameswaran, J De Coster, D Linten, M Scholz, S Thijs, ...
EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008
222008
On-wafer Human Metal Model measurements for system-level ESD analysis
M Scholz, D Linten, S Thijs, M Sawada, T Nakaei, T Hasebe, ...
2009 31st EOS/ESD Symposium, 1-9, 2009
212009
Characterization and optimization of sub-32-nm FinFET devices for ESD applications
S Thijs, D Tremouilles, C Russ, A Griffoni, N Collaert, R Rooyackers, ...
IEEE transactions on electron devices 55 (12), 3507-3516, 2008
202008
Turn-off characteristics of the CMOS snapback ESD protection devices-new insights and its implications
VA Vashchenko, M Scholz, P Jansen, R Petersen, MI Natarajan, ...
2006 Electrical Overstress/Electrostatic Discharge Symposium, 39-45, 2006
202006
Gated and STI defined ESD diodes in advanced bulk FinFET technologies
SH Chen, D Linten, JW Lee, M Scholz, G Hellings, A Sibaja-Hernandez, ...
2014 IEEE International Electron Devices Meeting, 20.4. 1-20.4. 4, 2014
192014
Comparison of system-level ESD design methodologies—Towards the efficient and ESD robust design of systems
M Scholz, SH Chen, G Vandersteen, D Linten, G Hellings, M Sawada, ...
IEEE Transactions on Device and Materials Reliability 13 (1), 213-222, 2012
192012
System-level ESD protection design using on-wafer characterization and transient simulations
M Scholz, SH Chen, S Thijs, D Linten, G Hellings, G Vandersteen, ...
IEEE Transactions on Device and Materials Reliability 14 (1), 104-111, 2012
192012
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