‪D.L. Huffaker, Diana Huffaker, Diana L. Huffaker‬

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BAOLAI LIANGUCLAVerified email at cnsi.ucla.edu
Ganesh BalakrishnanProfessor, ECE UNM, Director NM EPSCoRVerified email at unm.edu
L. Ralph DawsonResearch Professor of ECE, University of New MexicoVerified email at chtm.unm.edu
Jun TatebayashiOsaka UniversityVerified email at mat.eng.osaka-u.ac.jp
Dr. R. B. LaghumavarapuStaff Research Associate-III, University of California Los AngelesVerified email at ucla.edu
Andrew LinPh.D. Student of Electrical Engineering, University of California, Los AngelesVerified email at ucla.edu
Joshua N. ShapiroUniversity of California at Los Angeles, Electrical Engineering Dept.Verified email at ee.ucla.edu
Noppadon NuntawongNational Electronics and Computer Technology CenterVerified email at nectec.or.th
Adam ScofieldRockley PhotonicsVerified email at rockleyphotonics.com
Alan C FarrellUCLAVerified email at ngc.com
Pradeep SenanayakeUniversity of California Los AngelesVerified email at ucla.edu
Giacomo MarianiNASA Jet Propulsion LaboratoryVerified email at jpl.nasa.gov
Hyunseok KimUniversity of Illinois Urbana-ChampaignVerified email at illinois.edu
Wook-Jae LeeKongju National UniversityVerified email at kongju.ac.kr
Luke F. LesterRoanoke Electric Steel Professor and Head, Bradley Dept of ECE, Virginia TechVerified email at vt.edu
Maya Narayanan KuttyPostdoctoral Research Fellow, Centre for High Technology Materials, University of New MexicoVerified email at unm.edu
Guillaume HuyetUniversité Côte d'Azur, CNRS, Institut de Physique de NiceVerified email at inphyni.cnrs.fr
Gregory SalamoProfessor of Physics, University of ArkansasVerified email at uark.edu
Kalyan NunnaDrVerified email at iqep.com
Paul J SimmondsTufts UniversityVerified email at tufts.edu

D.L. Huffaker, Diana Huffaker, Diana L. Huffaker

Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLA

Verified email at uta.edu - Homepage

semiconductor physics semiconductor devices epitaxy nanotechnology


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1.3 μm room-temperature GaAs-based quantum-dot laser DL Huffaker, G Park, Z Zou, OB Shchekin, DG Deppe Applied Physics Letters 73 (18), 2564-2566, 1998	1086	1998
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers DL Huffaker, DG Deppe, K Kumar, TJ Rogers Applied Physics Letters 65 (1), 97-99, 1994	857	1994
Low-threshold oxide-confined 1.3-μm quantum-dot laser G Park, OB Shchekin, DL Huffaker, DG Deppe IEEE Photonics Technology Letters 12 (3), 230-232, 2000	427	2000
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 2006	314	2006
GaAs nanopillar-array solar cells employing in situ surface passivation G Mariani, AC Scofield, CH Hung, DL Huffaker Nature communications 4 (1), 1497, 2013	294	2013
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 2007	250	2007
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots DL Huffaker, DG Deppe Applied physics letters 73 (4), 520-522, 1998	234	1998
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser G Park, OB Shchekin, S Csutak, DL Huffaker, DG Deppe Applied physics letters 75 (21), 3267-3269, 1999	233	1999
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 2007	215	2007
Patterned radial GaAs nanopillar solar cells G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker Nano letters 11 (6), 2490-2494, 2011	186	2011
Spontaneous emission from planar microstructures DG Deppe, C Lei, CC Lin, DL Huffaker Journal of Modern Optics 41 (2), 325-344, 1994	170	1994
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers OB Shchekin, G Park, DL Huffaker, DG Deppe Applied Physics Letters 77 (4), 466-468, 2000	169	2000
Low threshold half-wave vertical-cavity lasers DL Huffaker, J Shin, DG Deppe Electronics Letters 30 (23), 1946-1947, 1994	165	1994
Bottom-up photonic crystal lasers AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker Nano letters 11 (12), 5387-5390, 2011	154	2011
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers G Park, DL Huffaker, Z Zou, OB Shchekin, DG Deppe IEEE Photonics Technology Letters 11 (3), 301-303, 1999	153	1999
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors DL Huffaker, LA Graham, H Deng, DG Deppe IEEE Photonics Technology Letters 8 (8), 974-976, 1996	152	1996
Topological insulator laser using valley-Hall photonic crystals Y Gong, S Wong, AJ Bennett, DL Huffaker, SS Oh Acs Photonics 7 (8), 2089-2097, 2020	141	2020
Interfacial misfit array formation for GaSb growth on GaAs S Huang, G Balakrishnan, DL Huffaker Journal of Applied Physics 105 (10), 2009	138	2009
Surface plasmon-enhanced nanopillar photodetectors P Senanayake, CH Hung, J Shapiro, A Lin, B Liang, BS Williams, ... Nano letters 11 (12), 5279-5283, 2011	130	2011
Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature H Kim, WJ Lee, AC Farrell, JSD Morales, P Senanayake, SV Prikhodko, ... Nano letters 17 (6), 3465-3470, 2017	127	2017

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