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D.L. Huffaker, Diana Huffaker, Diana L. Huffaker
D.L. Huffaker, Diana Huffaker, Diana L. Huffaker
Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLA
Verified email at uta.edu - Homepage
Title
Cited by
Cited by
Year
1.3 μm room-temperature GaAs-based quantum-dot laser
DL Huffaker, G Park, Z Zou, OB Shchekin, DG Deppe
Applied Physics Letters 73 (18), 2564-2566, 1998
10791998
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
DL Huffaker, DG Deppe, K Kumar, TJ Rogers
Applied Physics Letters 65 (1), 97-99, 1994
8511994
Low-threshold oxide-confined 1.3-μm quantum-dot laser
G Park, OB Shchekin, DL Huffaker, DG Deppe
IEEE Photonics Technology Letters 12 (3), 230-232, 2000
4282000
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ...
Applied physics letters 88 (13), 2006
3152006
GaAs nanopillar-array solar cells employing in situ surface passivation
G Mariani, AC Scofield, CH Hung, DL Huffaker
Nature communications 4 (1), 1497, 2013
2882013
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response
RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ...
Applied Physics Letters 90 (17), 2007
2502007
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
G Park, OB Shchekin, S Csutak, DL Huffaker, DG Deppe
Applied physics letters 75 (21), 3267-3269, 1999
2361999
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
DL Huffaker, DG Deppe
Applied physics letters 73 (4), 520-522, 1998
2331998
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers
RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ...
Applied Physics Letters 91 (24), 2007
2142007
Patterned radial GaAs nanopillar solar cells
G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker
Nano letters 11 (6), 2490-2494, 2011
1832011
Spontaneous emission from planar microstructures
DG Deppe, C Lei, CC Lin, DL Huffaker
Journal of Modern Optics 41 (2), 325-344, 1994
1741994
Low threshold half-wave vertical-cavity lasers
DL Huffaker, J Shin, DG Deppe
Electronics Letters 30 (23), 1946-1947, 1994
1701994
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
OB Shchekin, G Park, DL Huffaker, DG Deppe
Applied Physics Letters 77 (4), 466-468, 2000
1682000
Bottom-up photonic crystal lasers
AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker
Nano letters 11 (12), 5387-5390, 2011
1542011
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
G Park, DL Huffaker, Z Zou, OB Shchekin, DG Deppe
IEEE Photonics Technology Letters 11 (3), 301-303, 1999
1541999
IEEE Photon. Technol. Lett.
G Park, OB Shchekin, DL Huffaker, DG Deppe
Technol. Lett 12 (2), 326-328, 2000
1492000
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors
DL Huffaker, LA Graham, H Deng, DG Deppe
IEEE Photonics Technology Letters 8 (8), 974-976, 1996
1491996
Interfacial misfit array formation for GaSb growth on GaAs
S Huang, G Balakrishnan, DL Huffaker
Journal of Applied Physics 105 (10), 2009
1302009
Surface plasmon-enhanced nanopillar photodetectors
P Senanayake, CH Hung, J Shapiro, A Lin, B Liang, BS Williams, ...
Nano letters 11 (12), 5279-5283, 2011
1282011
Spontaneous lifetime control in a native-oxide-apertured microcavity
LA Graham, DL Huffaker, DG Deppe
Applied physics letters 74 (17), 2408-2410, 1999
1231999
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