| On the characterization and separation of trapping and ferroelectric behavior in HfZrO FET MNK Alam, B Kaczer, LÅ Ragnarsson, M Popovici, G Rzepa, N Horiguchi, ... IEEE Journal of the Electron Devices Society 7, 855-862, 2019 | 52 | 2019 |
| Positive non-linear capacitance: the origin of the steep subthresholdslope in ferroelectric FETs MHJVH Md Nur K.Alam, P. Roussel Scientific Reports 9 (14957 (2019)), 2019 | 24 | 2019 |
| Compact modeling of multidomain ferroelectric FETs: Charge trapping, channel percolation, and nucleation-growth domain dynamics Y Xiang, MG Bardon, B Kaczer, MNK Alam, LÅ Ragnarsson, K Kaczmarek, ... IEEE Transactions on Electron Devices 68 (4), 2107-2115, 2021 | 21 | 2021 |
| First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2 MNK Alam, S Clima, BJ O'sullivan, B Kaczer, G Pourtois, M Heyns, ... Journal of Applied Physics 129 (8), 2021 | 20 | 2021 |
| Implication of channel percolation in ferroelectric FETs for threshold voltage shift modeling Y Xiang, MG Bardon, B Kaczer, MNK Alam, LÅ Ragnarsson, ... 2020 IEEE International Electron Devices Meeting (IEDM), 18.2. 1-18.2. 4, 2020 | 17 | 2020 |
| Physical insights on steep slope FEFETs including nucleation-propagation and charge trapping Y Xiang, MG Bardon, MNK Alam, M Thesberg, B Kaczer, P Roussel, ... 2019 IEEE International Electron Devices Meeting (IEDM), 21.6. 1-21.6. 4, 2019 | 15 | 2019 |
| Anomalous staircase CV characteristics of InGaSb-on-insulator FET MNK Alam, MS Islam, MG Kibria, MR Islam IEEE Transactions on Electron Devices 61 (11), 3910-3913, 2014 | 15 | 2014 |
| Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET Y Higashi, N Ronchi, B Kaczer, MNK Alam, BJ O’Sullivan, K Banerjee, ... IEEE Transactions on Electron Devices 68 (9), 4391-4396, 2021 | 12 | 2021 |
| High performance La-doped HZO based ferroelectric capacitors by interfacial engineering MI Popovici, J Bizindavyi, P Favia, S Clima, MNK Alam, ... 2022 International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2022 | 9 | 2022 |
| Modeling of orientation-dependent photoelastic constants in cubic crystal system LJR Pinky, S Islam, MNK Alam, MA Hossain, MR Islam Materials Sciences and Applications 2014, 2014 | 9 | 2014 |
| Functional analysis of each of the three C3b binding sites of factor H and comparison with full length factor H MK Pangburn, M Shreedhar, N Alam, N Rawal, AP Herbert, A Haque MOLECULAR IMMUNOLOGY 41 (2-3), 291-291, 2004 | 9 | 2004 |
| Combined PCA-Daugman method: An Efficient technique for face and iris recognition MM Alam, MAR Khan, ZU Salehin, M Uddin, SJ Soheli, TZ Khan Journal of Advances in Mathematics and Computer Science 23, 34-44, 2020 | 7 | 2020 |
| InxGa1−xSb n-channel MOSFET: Effect of interface states on C-V characteristics MS Islam, MNK Alam, MR Islam 2013 IEEE 5th International Nanoelectronics Conference (INEC), 197-200, 2013 | 6 | 2013 |
| Human Resources Development in the Context of Challenges of Globalization with Reference to Teacher Education in Bangladesh. MM Islam, MA Alam ASA University Review 7 (1), 2013 | 6 | 2013 |
| Physico-chemical, sensory and microbiological characteristics of strawberry flavored milk under refrigerated storage MS Hossin, S Debnath, MN Alam, MS Islam, MK Miah, MSH Mollah, ... Asian Journal of Dairy and Food Research 40 (1), 82-87, 2021 | 5 | 2021 |
| Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements MNK Alam, Y Higashi, B Truijen, B Kaczer, MI Popovici, B O’Sullivan, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 4 | 2022 |
| Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics BJ O’Sullivan, B Truijen, V Putcha, A Grill, A Chasin, G Van Den Bosch, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 4A. 4-1-4A. 4-8, 2022 | 4 | 2022 |
| HfZrO ferroelectric characterization and parameterization of response to arbitrary excitation waveform MNK Alam, M Thesberg, B Kaczer, P Roussel, B Vermeulen, B Truijen, ... 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2019 | 4 | 2019 |
| Gate length scaling of Si nanowire FET: A NEGF study T Khan, HM Iztihad, A Sufian, MNK Alam, MN Mollah, MR Islam 2015 International Conference on Electrical Engineering and Information …, 2015 | 4 | 2015 |
| On the ballistic performance of InGaSb XOI FET: Impact of channel thickness and interface states MNK Alam, MS Islam, MG Kibria, MR Islam IEEE Transactions on Electron Devices 62 (6), 1855-1861, 2015 | 4 | 2015 |
Ben KaczerimecVerified email at imec.be
