Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2 L Zeng, Z Xin, S Chen, G Du, J Kang, X Liu Applied Physics Letters 103 (11), 2013 | 79 | 2013 |
Ultra-thin atomic layer deposited aluminium oxide tunnel layer passivated hole-selective contacts for silicon solar cells Z Xin, ZP Ling, P Wang, J Ge, C Ke, KB Choi, AG Aberle, R Stangl Solar Energy Materials and Solar Cells 191, 164-174, 2018 | 48 | 2018 |
Understanding surface treatment and ALD AlOx thickness induced surface passivation quality of c-Si Cz wafers G Kaur, N Dwivedi, X Zheng, B Liao, LZ Peng, A Danner, R Stangl, ... IEEE Journal of Photovoltaics 7 (5), 1224-1235, 2017 | 37 | 2017 |
Phonon-limited electron mobility in single-layer MoS2 L Zeng, Z Xin, SW Chen, G Du, JF Kang, XY Liu Chinese Physics Letters 31 (2), 027301, 2014 | 24 | 2014 |
Ultra-thin ALD-AlOx/PEDOT: PSS hole selective passivated contacts: An attractive low cost approach to increase solar cell performance ZP Ling, Z Xin, G Kaur, C Ke, R Stangl Solar Energy Materials and Solar Cells 185, 477-486, 2018 | 21 | 2018 |
Double-sided passivated contacts for solar cell applications: An industrially viable approach toward 24% efficient large area silicon solar cells ZP Ling, Z Xin, P Wang, R Sridharan, C Ke, R Stangl Silicon Materials, 89, 2019 | 20 | 2019 |
An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells Z Xin, S Duttagupta, M Tang, Z Qiu, B Liao, AG Aberle, R Stangl IEEE Journal of Photovoltaics, 2016 | 19 | 2016 |
Improved silicon oxide/polysilicon passivated contacts for high efficiency solar cells via optimized tunnel layer annealing G Kaur, Z Xin, T Dutta, R Sridharan, R Stangl, A Danner Solar Energy Materials and Solar Cells 217, 110720, 2020 | 18 | 2020 |
Engineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells G Kaur, Z Xin, R Sridharan, A Danner, R Stangl Solar Energy Materials and Solar Cells 218, 110758, 2020 | 16 | 2020 |
Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts Z Xin, ZP Ling, N Nandakumar, G Kaur, C Ke, B Liao, AG Aberle, R Stangl Japanese Journal of Applied Physics 56, 8S2, 2017 | 16 | 2017 |
Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices Y Hou, B Chen, B Gao, ZY Lun, Z Xin, R Liu, LF Liu, DD Han, Y Wang, ... 2013 IEEE International Conference of Electron Devices and Solid-state …, 2013 | 10 | 2013 |
Can interface charge enhance selectivity in tunnel layer passivated contacts? Using negatively charged aluminium oxide capped with dopant free PEDOT or boron doped polysilicon G Kaur, T Dutta, R Sridharan, X Zheng, A Danner, R Stangl Solar Energy Materials and Solar Cells 221, 110857, 2021 | 9 | 2021 |
Ultra-thin LPCVD SiNx/n+poly-Si passivated contacts – A possibility? G Kaur, T Dutta, Z Xin, ZP Ling, MJ Naval, MSM Saifullah, R Stangl, ... 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2679-2683, 2019 | 9 | 2019 |
Numerical investigation of metal–semiconductor–insulator–semiconductor passivated hole contacts based on atomic layer deposited AlOx C Ke, Z Xin, ZP Ling, AG Aberle, R Stangl Japanese Journal of Applied Physics 56 (8S2), 08MB08, 2017 | 9 | 2017 |
Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET Y Wang, P Huang, Z Xin, L Zeng, X Liu, G Du, J Kang Japanese Journal of Applied Physics 53 (4S), 04EC05, 2014 | 9 | 2014 |
Ultra-thin aluminium oxide tunnel layer passivated contact for high-efficiency crystalline silicon solar cells X Zheng PQDT-Global, 2018 | 8 | 2018 |
Comparison and characterization of different tunnel layers, suitable for passivated contact formation ZP Ling, Z Xin, C Ke, KJ Buatis, S Duttagupta, JS Lee, A Lai, A Hsu, ... Japanese Journal of Applied Physics 56, 2017 | 8 | 2017 |
Can interface charge enhance carrier selectivity in tunnel-layer/poly-Si passivated contacts? G Kaur, T Dutta, Z Xin, A Danner, R Stangl 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0438-0442, 2020 | 7 | 2020 |
Strain effects on monolayer MoS2 field effect transistors L Zeng, Z Xin, P Chang, X Liu Japanese Journal of Applied Physics 54 (4S), 04DC17, 2015 | 6 | 2015 |
Strain affected electronic properties of bilayer tungsten disulfide Z Xin, L Zeng, Y Wang, K Wei, G Du, J Kang, X Liu Japanese Journal of Applied Physics 53 (4S), 04EN06, 2014 | 6 | 2014 |