| Ferroelectric thin films: Review of materials, properties, and applications N Setter, D Damjanovic, L Eng, G Fox, S Gevorgian, S Hong, A Kingon, ... Journal of applied physics 100 (5), 2006 | 2229 | 2006 |
| Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features AK Tagantsev, I Stolichnov, EL Colla, N Setter Journal of Applied Physics 90 (3), 1387-1402, 2001 | 725 | 2001 |
| Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films AK Tagantsev, I Stolichnov, N Setter, JS Cross, M Tsukada Physical Review B 66 (21), 214109, 2002 | 532 | 2002 |
| Injection-controlled size effect on switching of ferroelectric thin films AK Tagantsev, IA Stolichnov Applied Physics Letters 74 (9), 1326-1328, 1999 | 238 | 1999 |
| Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn) As I Stolichnov, SWE Riester, HJ Trodahl, N Setter, AW Rushforth, ... Nature materials 7 (6), 464-467, 2008 | 200 | 2008 |
| Space-charge influenced-injection model for conduction in thin films I Stolichnov, A Tagantsev Journal of applied physics 84 (6), 3216-3225, 1998 | 180 | 1998 |
| Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ... Advanced Materials Interfaces 6 (11), 1900042, 2019 | 174 | 2019 |
| Top-interface-controlled switching and fatigue endurance of ferroelectric capacitors I Stolichnov, A Tagantsev, N Setter, JS Cross, M Tsukada Applied physics letters 74 (23), 3552-3554, 1999 | 159 | 1999 |
| Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories AK Tagantsev, I Stolichnov, N Setter, JS Cross Journal of Applied Physics 96 (11), 6616-6623, 2004 | 100 | 2004 |
| Double-gate negative-capacitance MOSFET with PZT gate-stack on ultra thin body SOI: An experimentally calibrated simulation study of device performance A Saeidi, F Jazaeri, I Stolichnov, AM Ionescu IEEE Transactions on Electron Devices 63 (12), 4678-4684, 2016 | 99 | 2016 |
| Control of leakage conduction of high-fatigue-endurance film ferroelectric capacitors with electrodes I Stolichnov, A Tagantsev, N Setter, JS Cross, M Tsukada Applied physics letters 75 (12), 1790-1792, 1999 | 88 | 1999 |
| Controlled stripes of ultrafine ferroelectric domains L Feigl, P Yudin, I Stolichnov, T Sluka, K Shapovalov, M Mtebwa, ... Nature communications 5 (1), 4677, 2014 | 85 | 2014 |
| Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study A Saeidi, F Jazaeri, F Bellando, I Stolichnov, GV Luong, QT Zhao, S Mantl, ... IEEE electron device letters 38 (10), 1485-1488, 2017 | 77 | 2017 |
| Bent ferroelectric domain walls as reconfigurable metallic-like channels I Stolichnov, L Feigl, LJ McGilly, T Sluka, XK Wei, E Colla, A Crassous, ... Nano letters 15 (12), 8049-8055, 2015 | 77 | 2015 |
| Long-term retention in organic ferroelectric-graphene memories S Raghavan, I Stolichnov, N Setter, JS Heron, M Tosun, A Kis Applied Physics Letters 100 (2), 2012 | 72 | 2012 |
| Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN∕ GaN heterostructures I Stolichnov, L Malin, P Muralt, N Setter Applied physics letters 88 (4), 2006 | 68 | 2006 |
| Persistent conductive footprints of 109 domain walls in bismuth ferrite films I Stolichnov, M Iwanowska, E Colla, B Ziegler, I Gaponenko, P Paruch, ... Applied Physics Letters 104 (13), 2014 | 67 | 2014 |
| Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ... Nano letters 20 (5), 3255-3262, 2020 | 66 | 2020 |
| Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb (Zr, Ti) O3 films I Stolichnov, L Malin, E Colla, AK Tagantsev, N Setter Applied Physics Letters 86 (1), 2005 | 61 | 2005 |
| Thermally induced cooperative molecular reorientation and nanoscale polarization switching behaviors of ultrathin poly (vinylidene fluoride-trifluoroethylene) films D Guo, I Stolichnov, N Setter The journal of physical chemistry B 115 (46), 13455-13466, 2011 | 60 | 2011 |
