Robin Degraeve
Robin Degraeve
Verified email at
Cited by
Cited by
Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
ML Green, EP Gusev, R Degraeve, EL Garfunkel
Journal of Applied Physics 90 (5), 2057-2121, 2001
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ...
IEEE Transactions on Electron Devices 45 (4), 904-911, 1998
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
R Degraeve, G Groeseneken, R Bellens, M Depas, HE Maes
Proceedings of International Electron Devices Meeting, 863-866, 1995
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97 (24), 2010
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ...
IEEE Transactions on Electron Devices 49 (3), 500-506, 2002
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
R Degraeve, B Kaczer, G Groeseneken
Microelectronics Reliability 39 (10), 1445-1460, 1999
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics
A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ...
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory
U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ...
Nano letters 15 (12), 7970-7975, 2015
A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
R Degraeve, JL Ogier, R Bellens, PJ Roussel, G Groeseneken, HE Maes
IEEE Transactions on Electron Devices 45 (2), 472-481, 1998
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
R Degraeve, B Kaczer, A De Keersgieter, G Groeseneken
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
The system can't perform the operation now. Try again later.
Articles 1–20