| Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ... Nano letters 18 (11), 6906-6914, 2018 | 154 | 2018 |
| Nonpolar InGaN/GaN core–shell single nanowire lasers C Li, JB Wright, S Liu, P Lu, JJ Figiel, B Leung, WW Chow, I Brener, ... Nano letters 17 (2), 1049-1055, 2017 | 124 | 2017 |
| Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN Q Sun, CD Yerino, B Leung, J Han, ME Coltrin Journal of Applied Physics 110 (5), 2011 | 119 | 2011 |
| A conductivity‐based selective etching for next generation GaN devices Y Zhang, SW Ryu, C Yerino, B Leung, Q Sun, Q Song, H Cao, J Han physica status solidi (b) 247 (7), 1713-1716, 2010 | 105 | 2010 |
| Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire Q Sun, BH Kong, CD Yerino, TS Ko, B Leung, HK Cho, J Han Journal of Applied Physics 106 (12), 2009 | 89 | 2009 |
| Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy B Leung, Q Sun, CD Yerino, J Han, ME Coltrin Semiconductor Science and Technology 27 (2), 024005, 2012 | 87 | 2012 |
| Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process Q Sun, B Leung, CD Yerino, Y Zhang, J Han Applied Physics Letters 95 (23), 2009 | 87 | 2009 |
| Wide bandgap III-nitride nanomembranes for optoelectronic applications SH Park, G Yuan, D Chen, K Xiong, J Song, B Leung, J Han Nano letters 14 (8), 4293-4298, 2014 | 80 | 2014 |
| The fabrication of large-area, free-standing GaN by a novel nanoetching process Y Zhang, Q Sun, B Leung, J Simon, ML Lee, J Han Nanotechnology 22 (4), 045603, 2010 | 80 | 2010 |
| A liftoff process of GaN layers and devices through nanoporous transformation Y Zhang, B Leung, J Han Applied Physics Letters 100 (18), 2012 | 69 | 2012 |
| Multi-color broadband visible light source via GaN hexagonal annular structure YH Ko, J Song, B Leung, J Han, YH Cho Scientific reports 4 (1), 5514, 2014 | 63 | 2014 |
| Strain relaxation and dislocation reduction in AlGaN step‐graded buffer for crack‐free GaN on Si (111) B Leung, J Han, Q Sun physica status solidi (c) 11 (3‐4), 437-441, 2014 | 62 | 2014 |
| Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films AW Bruch, C Xiong, B Leung, M Poot, J Han, HX Tang Applied Physics Letters 107 (14), 2015 | 56 | 2015 |
| Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films S Huang, Y Zhang, B Leung, G Yuan, G Wang, H Jiang, Y Fan, Q Sun, ... ACS applied materials & interfaces 5 (21), 11074-11079, 2013 | 56 | 2013 |
| Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes CD Yerino, Y Zhang, B Leung, ML Lee, TC Hsu, CK Wang, WC Peng, ... Applied Physics Letters 98 (25), 2011 | 44 | 2011 |
| Improved photoelectrochemical water splitting efficiency of nanoporous GaN photoanode SW Ryu, Y Zhang, B Leung, C Yerino, J Han Semiconductor science and technology 27 (1), 015014, 2011 | 43 | 2011 |
| Epitaxial lateral overgrowth of nitrogen-polar (0001̅) GaN by metalorganic chemical vapor deposition J Song, G Yuan, K Xiong, B Leung, J Han Crystal growth & design 14 (5), 2510-2515, 2014 | 40 | 2014 |
| Evolutionary selection growth: towards template‐insensitive preparation of single‐crystal layers B Leung, J Song, Y Zhang, J Han Advanced Materials 25 (9), 1285-1289, 2013 | 39 | 2013 |
| Single crystal gallium nitride nanomembrane photoconductor and field effect transistor K Xiong, SH Park, J Song, G Yuan, D Chen, B Leung, J Han Advanced Functional Materials 24 (41), 6503-6508, 2014 | 36 | 2014 |
| Semipolar (202¯ 1) GaN and InGaN quantum wells on sapphire substrates B Leung, D Wang, YS Kuo, K Xiong, J Song, D Chen, SH Park, SY Hong, ... Applied Physics Letters 104 (26), 2014 | 35 | 2014 |
