Follow
Gregor Pobegen
Gregor Pobegen
Senior staff engineer, KAI GmbH, Austria
Verified email at k-ai.at - Homepage
Title
Cited by
Cited by
Year
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
1972011
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
T Aichinger, G Rescher, G Pobegen
Microelectronics Reliability 80, 68-78, 2018
1442018
Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
P Lagger, C Ostermaier, G Pobegen, D Pogany
2012 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2012
1412012
The ‘permanent’component of NBTI: Composition and annealing
T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ...
2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011
1002011
On the distribution of NBTI time constants on a long, temperature-accelerated time scale
G Pobegen, T Grasser
IEEE Transactions on Electron Devices 60 (7), 2148-2155, 2013
662013
On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
G Rescher, G Pobegen, T Aichinger, T Grasser
2016 IEEE International Electron Devices Meeting (IEDM), 10.8. 1-10.8. 4, 2016
542016
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
T Grasser, K Rott, H Reisinger, M Waltl, P Wagner, F Schanovsky, W Goes, ...
2013 IEEE International Electron Devices Meeting, 15.5. 1-15.5. 4, 2013
522013
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE electron device letters 34 (8), 939-941, 2013
502013
Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes
T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015
452015
Understanding temperature acceleration for NBTI
G Pobegen, T Aichinger, M Nelhiebel, T Grasser
2011 International Electron Devices Meeting, 27.3. 1-27.3. 4, 2011
432011
Very fast dynamics of threshold voltage drifts in GaN-based MIS-HEMTs
P Lagger, A Schiffmann, G Pobegen, D Pogany, C Ostermaier
IEEE Electron Device Letters 34 (9), 1112-1114, 2013
412013
Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN
C Koller, G Pobegen, C Ostermaier, D Pogany
IEEE Transactions on Electron Devices 65 (12), 5314-5321, 2018
392018
Preconditioned BTI on 4H-SiC: Proposal for a nearly delay time-independent measurement technique
G Rescher, G Pobegen, T Aichinger, T Grasser
IEEE Transactions on Electron Devices 65 (4), 1419-1426, 2018
332018
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface
G Gruber, J Cottom, R Meszaros, M Koch, G Pobegen, T Aichinger, ...
Journal of Applied Physics 123 (16), 161514, 2018
282018
The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers
C Koller, G Pobegen, C Ostermaier, M Huber, D Pogany
Applied Physics Letters 111 (3), 032106, 2017
272017
Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress
G Rescher, G Pobegen, T Grasser
Materials Science Forum 858, 481-484, 2016
242016
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
212017
Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamics
C Koller, G Pobegen, C Ostermaier, D Pogany
2017 IEEE International Electron Devices Meeting (IEDM), 33.4. 1-33.4. 4, 2017
202017
Dependence of the negative bias temperature instability on the gate oxide thickness
G Pobegen, T Aichinger, M Nelhiebel, T Grasser
2010 IEEE International Reliability Physics Symposium, 1073-1077, 2010
202010
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
M Hauck, J Lehmeyer, G Pobegen, HB Weber, M Krieger
Communications Physics 2 (1), 1-6, 2019
192019
The system can't perform the operation now. Try again later.
Articles 1–20