| Hot-electron effects in AlGaN/GaN HEMTs under semi-ON DC stress A Minetto, B Deutschmann, N Modolo, A Nardo, M Meneghini, E Zanoni, ... IEEE Transactions on Electron Devices 67 (11), 4602-4605, 2020 | 48 | 2020 |
| A physics-based approach to model hot-electron trapping kinetics in p-GaN HEMTs N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... IEEE Electron Device Letters 42 (5), 673-676, 2021 | 33 | 2021 |
| Cumulative hot-electron trapping in GaN-based power HEMTs observed by an ultrafast (10 V/Ns) on-wafer methodology N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 25 | 2021 |
| Trap-state mapping to model GaN transistors dynamic performance N Modolo, C De Santi, A Minetto, L Sayadi, G Prechtl, G Meneghesso, ... Scientific Reports 12 (1), 1755, 2022 | 16 | 2022 |
| Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... Semiconductor Science and Technology 36 (1), 014001, 2020 | 15 | 2020 |
| Drain field plate impact on the hard-switching performance of AlGaN/GaN HEMTs A Minetto, N Modolo, L Sayadi, C Koller, C Ostermaier, M Meneghini, ... IEEE Transactions on Electron Devices 68 (10), 5003-5008, 2021 | 10 | 2021 |
| A generalized approach to determine the switching reliability of GaN HEMTs on-wafer level N Modolo, A Minetto, C De Santi, L Sayadi, S Sicre, G Prechtl, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 5 | 2021 |
| Charge Trapping in GaN Power Transistors: Challenges and Perspectives M Meneghini, N Modolo, A Nardo, C De Santi, A Minetto, L Sayadi, ... 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 4 | 2021 |
| Hot electron effects in AlGaN/GaN HEMTs during hard-switching events A Minetto, N Modolo, M Meneghini, E Zanoni, L Sayadi, S Sicre, ... Microelectronics Reliability 126, 114208, 2021 | 4 | 2021 |
| On the CET-map ill-posed inversion problem: Theory and application to GaN HEMTs N Modolo, C De Santi, G Baratella, A Minetto, L Sayadi, S Sicre, G Prechtl, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Modeling Hot-Electron Trapping in GaN-based HEMTs N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 10B. 1-1-10B. 1-5, 2022 | 1 | 2022 |
| System-Level Assessment of Dynamic Effects in GaN-based Power Converters A Minetto, B Deutschmann, O Häberlen, G Curatola 2019 15th Conference on Ph. D Research in Microelectronics and Electronics …, 2019 | 1 | 2019 |
| Positive VTH shift in Schottky p-GaN Gate power HEMTs: Dependence on Temperature, Bias and Gate leakage N Modolo, C De Santi, S Sicre, A Minetto, G Meneghesso, E Zanoni, ... IEEE Transactions on Power Electronics, 2024 | | 2024 |
| A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests D Wieland, S Ofner, M Stabentheiner, B Butej, C Koller, J Sun, A Minetto, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | | 2023 |
| System-level evaluation of dynamic effects in a GaN-based class-E power amplifier A Minetto, B Deutschmann, O Häberlen, G Curatola Integration 75, 11-18, 2020 | | 2020 |
| On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs CDS NicolaModolo, G Baratella, A Minetto, L Sayadi, S Sicre, G Prechtl, ... | | |
