Follow
Jocelyn Achard
Jocelyn Achard
Professeur en électronique et traitement du signal, Université Paris 13
Verified email at lspm.cnrs.fr
Title
Cited by
Cited by
Year
Ultralong spin coherence time in isotopically engineered diamond
G Balasubramanian, P Neumann, D Twitchen, M Markham, R Kolesov, ...
Nature materials 8 (5), 383-387, 2009
22222009
CVD diamond films: from growth to applications
A Gicquel, K Hassouni, F Silva, J Achard
Current Applied Physics 1 (6), 479-496, 2001
2762001
Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition
A Tallaire, AT Collins, D Charles, J Achard, R Sussmann, A Gicquel, ...
Diamond and related materials 15 (10), 1700-1707, 2006
2412006
High quality MPACVD diamond single crystal growth: high microwave power density regime
J Achard, F Silva, A Tallaire, X Bonnin, G Lombardi, K Hassouni, ...
Journal of Physics D: Applied Physics 40 (20), 6175, 2007
2102007
Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
A Tallaire, J Achard, F Silva, O Brinza, A Gicquel
Comptes Rendus Physique 14 (2-3), 169-184, 2013
1962013
Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
M Lesik, JP Tetienne, A Tallaire, J Achard, V Mille, A Gicquel, JF Roch, ...
Applied Physics Letters 104 (11), 113107, 2014
1512014
High quality, large surface area, homoepitaxial MPACVD diamond growth
F Silva, J Achard, O Brinza, X Bonnin, K Hassouni, A Anthonis, K De Corte, ...
Diamond and Related Materials 18 (5-8), 683-697, 2009
1462009
The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD
J Achard, A Tallaire, R Sussmann, F Silva, A Gicquel
Journal of Crystal Growth 284 (3-4), 396-405, 2005
1372005
Coupled effect of nitrogen addition and surface temperature on the morphology and the kinetics of thick CVD diamond single crystals
J Achard, F Silva, O Brinza, A Tallaire, A Gicquel
Diamond and related materials 16 (4-7), 685-689, 2007
1342007
Enhanced generation of single optically active spins in diamond by ion implantation
B Naydenov, V Richter, J Beck, M Steiner, P Neumann, ...
Applied Physics Letters 96 (16), 163108, 2010
1302010
Homoepitaxial deposition of high-quality thick diamond films: effect of growth parameters
A Tallaire, J Achard, F Silva, RS Sussmann, A Gicquel
Diamond and related materials 14 (3-7), 249-254, 2005
1282005
Magnetic imaging with an ensemble of nitrogen-vacancy centers in diamond
M Chipaux, A Tallaire, J Achard, S Pezzagna, J Meijer, V Jacques, ...
The European Physical Journal D 69 (7), 1-10, 2015
1222015
Engineered arrays of nitrogen-vacancy color centers in diamond based on implantation of CN− molecules through nanoapertures
P Spinicelli, A Dréau, L Rondin, F Silva, J Achard, S Xavier, S Bansropun, ...
New Journal of Physics 13 (2), 025014, 2011
1202011
Oxygen plasma pre‐treatments for high quality homoepitaxial CVD diamond deposition
A Tallaire, J Achard, F Silva, RS Sussmann, A Gicquel, E Rzepka
physica status solidi (a) 201 (11), 2419-2424, 2004
1092004
Photonic nano-structures on (111)-oriented diamond
E Neu, P Appel, M Ganzhorn, J Miguel-Sánchez, M Lesik, V Mille, ...
Applied Physics Letters 104 (15), 153108, 2014
1082014
Thick boron doped diamond single crystals for high power electronics
J Achard, F Silva, R Issaoui, O Brinza, A Tallaire, H Schneider, K Isoird, ...
Diamond and Related Materials 20 (2), 145-152, 2011
1062011
Microwave Device Characterization Using a Widefield Diamond Microscope
A Horsley, P Appel, J Wolters, J Achard, A Tallaire, P Maletinsky, ...
Physical Review Applied 10 (4), 044039, 2018
982018
Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H2/O2 plasma etching treatment
M Naamoun, A Tallaire, F Silva, J Achard, P Doppelt, A Gicquel
physica status solidi (a) 209 (9), 1715-1720, 2012
912012
Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications
J Achard, V Jacques, A Tallaire
Journal of Physics D: Applied Physics 53 (31), 313001, 2020
832020
Initialization and Readout of Nuclear Spins via a Negatively Charged Silicon-Vacancy Center in Diamond
MH Metsch, K Senkalla, B Tratzmiller, J Scheuer, M Kern, J Achard, ...
Physical review letters 122 (19), 190503, 2019
832019
The system can't perform the operation now. Try again later.
Articles 1–20