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Wojciech M. Linhart
Wojciech M. Linhart
Wroclaw University of Science and Technology
Verified email at pwr.edu.pl
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Cited by
Cited by
Year
Electronic and optical properties of single crystal SnS 2: an earth-abundant disulfide photocatalyst
LA Burton, TJ Whittles, D Hesp, WM Linhart, JM Skelton, B Hou, ...
Journal of Materials Chemistry A 4 (4), 1312-1318, 2016
2912016
Growth, disorder, and physical properties of ZnSnN2
N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ...
Applied Physics Letters 103 (4), 2013
1502013
Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber
TD Veal, N Feldberg, NF Quackenbush, WM Linhart, DO Scanlon, ...
Advanced Energy Materials, 1501462, 2015
1242015
Growth and properties of GaSbBi alloys
MK Rajpalke, WM Linhart, M Birkett, KM Yu, DO Scanlon, J Buckeridge, ...
Applied Physics Letters 103 (14), 2013
1002013
Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
M Birkett, WM Linhart, J Stoner, LJ Phillips, K Durose, J Alaria, JD Major, ...
Apl Materials 6 (8), 2018
852018
High Bi content GaSbBi alloys
MK Rajpalke, WM Linhart, M Birkett, KM Yu, J Alaria, J Kopaczek, ...
Journal of Applied Physics 116 (4), 043511, 2014
772014
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
M Speckbacher, J Treu, TJ Whittles, WM Linhart, X Xu, K Saller, ...
Nano letters 16 (8), 5135-5142, 2016
762016
Bi-induced band gap reduction in epitaxial InSbBi alloys
MK Rajpalke, WM Linhart, KM Yu, M Birkett, J Alaria, JJ Bomphrey, ...
Applied Physics Letters 105 (21), 212101, 2014
622014
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
IZ Mitrovic, M Althobaiti, AD Weerakkody, VR Dhanak, WM Linhart, ...
Journal of Applied Physics 115 (11), 2014
542014
Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime
MP Polak, P Scharoch, R Kudrawiec, J Kopaczek, MJ Winiarski, ...
Journal of Physics D: Applied Physics 47 (35), 355107, 2014
532014
Novel type‐II InAs/AlSb core–shell nanowires and their enhanced negative photocurrent for efficient photodetection
H Li, H Alradhi, Z Jin, EA Anyebe, AM Sanchez, WM Linhart, R Kudrawiec, ...
Advanced Functional Materials 28 (8), 1705382, 2018
472018
Temperature dependence of the band gap of GaSb1-xBix alloys with 0 < x < 0.042 determined by photoreflectance
J Kopaczek, R Kudrawiec, WM Linhart, MK Rajpalke, KM Yu, TS Jones, ...
Applied Physics Letters 103 (26), 261907, 2013
472013
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
J Kopaczek, WM Linhart, M Baranowski, RD Richard, F Bastiman, ...
Semiconductor Science and Technology 30, 094005, 2015
382015
Surface, bulk, and interface electronic properties of nonpolar InN
WM Linhart, TD Veal, PDC King, G Koblmüller, CS Gallinat, JS Speck, ...
Applied Physics Letters 97 (11), 2010
382010
Low- and high-energy photoluminescence from GaSb1−xBix with 0 < x ≤ 0.042
J Kopaczek, R Kudrawiec, W Linhart, M Rajpalke, T Jones, M Ashwin, ...
Applied Physics Express 7 (11), 111202, 2014
352014
Bi flux-dependent MBE growth of GaSbBi alloys
MK Rajpalke, WM Linhart, KM Yu, TS Jones, MJ Ashwin, TD Veal
Journal of Crystal Growth 425, 241-244, 2015
332015
Giant reduction of InN surface electron accumulation: Compensation of surface donors by Mg dopants
WM Linhart, J Chai, RJH Morris, MG Dowsett, CF McConville, SM Durbin, ...
Physical Review Letters 109 (24), 247605, 2012
252012
Optical absorption by dilute GaNSb alloys: Influence of N pair states
JJ Mudd, NJ Kybert, WM Linhart, L Buckle, T Ashley, PDC King, TS Jones, ...
Applied Physics Letters 103 (4), 2013
242013
Nesting-like band gap in bismuth sulfide Bi 2 S 3
WM Linhart, SJ Zelewski, P Scharoch, F Dybała, R Kudrawiec
Journal of Materials Chemistry C 9, 13733-13738, 2021
232021
Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate
SJ Zelewski, J Kopaczek, WM Linhart, F Ishikawa, S Shimomura, ...
Applied Physics Letters 109, 182106, 2016
212016
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