Sayeef Salahuddin
Sayeef Salahuddin
TSMC Distinguished Professor of EECS, University of California, Berkeley
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Cited by
Cited by
Progress, challenges, and opportunities in two-dimensional materials beyond graphene
SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ...
ACS nano 7 (4), 2898-2926, 2013
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
S Salahuddin, S Datta
Nano letters 8 (2), 405-410, 2008
How Good Can Monolayer MoS2 Transistors Be?
Y Yoon, K Ganapathi, S Salahuddin
Nano letters 11 (9), 3768-3773, 2011
Proposal for an all-spin logic device with built-in memory
B Behin-Aein, D Datta, S Salahuddin, S Datta
Nature nanotechnology 5 (4), 266-270, 2010
Memory leads the way to better computing
HSP Wong, S Salahuddin
Nature nanotechnology 10 (3), 191-194, 2015
Negative capacitance in a ferroelectric capacitor
AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ...
Nature materials 14 (2), 182-186, 2015
Deterministic switching of ferromagnetism at room temperature using an electric field
JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ...
Nature 516 (7531), 370-373, 2014
Room-temperature antiferromagnetic memory resistor
X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ...
Nature materials 13 (4), 367-374, 2014
Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
The era of hyper-scaling in electronics
S Salahuddin, K Ni, S Datta
Nature electronics 1 (8), 442-450, 2018
Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure
JT Heron, M Trassin, K Ashraf, M Gajek, Q He, SY Yang, DE Nikonov, ...
Physical review letters 107 (21), 217202, 2011
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
A Islam Khan, D Bhowmik, P Yu, S Joo Kim, X Pan, R Ramesh, ...
Applied Physics Letters 99 (11), 2011
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
AI Khan, CW Yeung, C Hu, S Salahuddin
2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011
Sub-60mV-swing negative-capacitance FinFET without hysteresis
KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ...
2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015
Spatially resolved steady-state negative capacitance
AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ...
Nature 565 (7740), 468-471, 2019
Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy
L You, OJ Lee, D Bhowmik, D Labanowski, J Hong, J Bokor, ...
Proceedings of the National Academy of Sciences 112 (33), 10310-10315, 2015
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ...
Nano letters 17 (8), 4801-4806, 2017
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials 26 (47), 8643-8649, 2016
Spin Hall effect clocking of nanomagnetic logic without a magnetic field
D Bhowmik, L You, S Salahuddin
Nature nanotechnology 9 (1), 59-63, 2014
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