Progress, challenges, and opportunities in two-dimensional materials beyond graphene SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ... ACS nano 7 (4), 2898-2926, 2013 | 5211 | 2013 |
Use of negative capacitance to provide voltage amplification for low power nanoscale devices S Salahuddin, S Datta Nano letters 8 (2), 405-410, 2008 | 2317 | 2008 |
How Good Can Monolayer MoS2 Transistors Be? Y Yoon, K Ganapathi, S Salahuddin Nano letters 11 (9), 3768-3773, 2011 | 1843 | 2011 |
Proposal for an all-spin logic device with built-in memory B Behin-Aein, D Datta, S Salahuddin, S Datta Nature nanotechnology 5 (4), 266-270, 2010 | 962 | 2010 |
Memory leads the way to better computing HSP Wong, S Salahuddin Nature nanotechnology 10 (3), 191-194, 2015 | 946 | 2015 |
Negative capacitance in a ferroelectric capacitor AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ... Nature materials 14 (2), 182-186, 2015 | 827 | 2015 |
Deterministic switching of ferromagnetism at room temperature using an electric field JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ... Nature 516 (7531), 370-373, 2014 | 782 | 2014 |
Room-temperature antiferromagnetic memory resistor X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ... Nature materials 13 (4), 367-374, 2014 | 729 | 2014 |
Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 694 | 2020 |
The era of hyper-scaling in electronics S Salahuddin, K Ni, S Datta Nature electronics 1 (8), 442-450, 2018 | 595 | 2018 |
Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure JT Heron, M Trassin, K Ashraf, M Gajek, Q He, SY Yang, DE Nikonov, ... Physical review letters 107 (21), 217202, 2011 | 526 | 2011 |
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ... Nature 468 (7321), 286-289, 2010 | 483 | 2010 |
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures A Islam Khan, D Bhowmik, P Yu, S Joo Kim, X Pan, R Ramesh, ... Applied Physics Letters 99 (11), 2011 | 403 | 2011 |
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation AI Khan, CW Yeung, C Hu, S Salahuddin 2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011 | 382 | 2011 |
Sub-60mV-swing negative-capacitance FinFET without hysteresis KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ... 2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015 | 362 | 2015 |
Spatially resolved steady-state negative capacitance AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ... Nature 565 (7740), 468-471, 2019 | 346 | 2019 |
Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy L You, OJ Lee, D Bhowmik, D Labanowski, J Hong, J Bokor, ... Proceedings of the National Academy of Sciences 112 (33), 10310-10315, 2015 | 339 | 2015 |
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ... Nano letters 17 (8), 4801-4806, 2017 | 293 | 2017 |
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials 26 (47), 8643-8649, 2016 | 287 | 2016 |
Spin Hall effect clocking of nanomagnetic logic without a magnetic field D Bhowmik, L You, S Salahuddin Nature nanotechnology 9 (1), 59-63, 2014 | 284 | 2014 |