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R. D. Vispute
R. D. Vispute
Blue Wave Semiconductors
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Cited by
Cited by
Year
Realization of band gap above 5.0 eV in metastable cubic-phase alloy films
S Choopun, RD Vispute, W Yang, RP Sharma, T Venkatesan, H Shen
Applied Physics Letters 80 (9), 1529-1531, 2002
7132002
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
RD Vispute, V Talyansky, S Choopun, RP Sharma, T Venkatesan, M He, ...
Applied physics letters 73 (3), 348-350, 1998
6371998
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
S Choopun, RD Vispute, W Noch, A Balsamo, RP Sharma, T Venkatesan, ...
Applied Physics Letters 75 (25), 3947-3949, 1999
4311999
Ultraviolet photoconductive detector based on epitaxial thin films
W Yang, RD Vispute, S Choopun, RP Sharma, T Venkatesan, H Shen
Applied Physics Letters 78 (18), 2787-2789, 2001
3572001
Compositionally-tuned epitaxial cubic on Si(100) for deep ultraviolet photodetectors
W Yang, SS Hullavarad, B Nagaraj, I Takeuchi, RP Sharma, ...
Applied Physics Letters 82 (20), 3424-3426, 2003
3322003
High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides
RD Vispute, V Talyansky, Z Trajanovic, S Choopun, M Downes, ...
Applied Physics Letters 70 (20), 2735-2737, 1997
3141997
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with
M He, I Minus, P Zhou, SN Mohammed, JB Halpern, R Jacobs, WL Sarney, ...
Applied Physics Letters 77 (23), 3731-3733, 2000
2702000
Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in composition spreads
I Takeuchi, W Yang, KS Chang, MA Aronova, T Venkatesan, RD Vispute, ...
Journal of Applied Physics 94 (11), 7336-7340, 2003
2562003
Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition
RD Vispute, J Narayan, H Wu, K Jagannadham
Journal of applied physics 77 (9), 4724-4728, 1995
2281995
Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase
SX Zhang, DC Kundaliya, W Yu, S Dhar, SY Young, LG Salamanca-Riba, ...
Journal of Applied Physics 102 (1), 2007
2192007
Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to -type GaN
A Motayed, R Bathe, MC Wood, OS Diouf, RD Vispute, SN Mohammad
Journal of applied physics 93 (2), 1087-1094, 2003
2192003
High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition
RD Vispute, H Wu, J Narayan
Applied physics letters 67 (11), 1549-1551, 1995
2021995
Growth of epitaxial GaN films by pulsed laser deposition
RD Vispute, V Talyansky, RP Sharma, S Choopun, M Downes, ...
Applied physics letters 71 (1), 102-104, 1997
1381997
Characteristics of titanium nitride films grown by pulsed laser deposition
R Chowdhury, RD Vispute, K Jagannadham, J Narayan
Journal of materials research 11 (6), 1458-1469, 1996
1281996
High quality optoelectronic grade epitaxial AlN films on α-Al2O3, Si and 6H-SiC by pulsed laser deposition
RD Vispute, J Narayan, JD Budai
Thin Solid Films 299 (1-2), 94-103, 1997
1081997
Observation of resonant tunneling action in ZnO/Zn0. 8Mg0. 2O devices
S Krishnamoorthy, AA Iliadis, A Inumpudi, S Choopun, RD Vispute, ...
Solid-State Electronics 46 (10), 1633-1637, 2002
942002
Realization of Mg (x= 0.15) Zn (1− x= 0.85) O-based metal-semiconductor-metal UV detector on quartz and sapphire
SS Hullavarad, S Dhar, B Varughese, I Takeuchi, T Venkatesan, ...
Journal of Vacuum Science & Technology A 23 (4), 982-985, 2005
692005
Effectiveness of AlN encapsulant in annealing ion-implanted SiC
EM Handy, MV Rao, KA Jones, MA Derenge, PH Chi, RD Vispute, ...
Journal of applied physics 86 (2), 746-751, 1999
651999
Pt–Ga Ohmic contacts to n-ZnO using focused ion beams
A Inumpudi, AA Iliadis, S Krishnamoorthy, S Choopun, RD Vispute, ...
Solid-State Electronics 46 (10), 1665-1668, 2002
572002
Advances in pulsed laser deposition of nitrides and their integration with oxides
RD Vispute, V Talyansky, RP Sharma, S Choopun, M Downes, ...
Applied surface science 127, 431-439, 1998
561998
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