Chun-Li Lo
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Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
2013 Symposium on VLSI Technology, T166-T167, 2013
Dependence of read margin on pull-up schemes in high-density one selector–one resistor crossbar array
CL Lo, TH Hou, MC Chen, JJ Huang
IEEE transactions on electron devices 60 (1), 420-426, 2012
Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology
CL Lo, M Catalano, KKH Smithe, L Wang, S Zhang, E Pop, MJ Kim, ...
npj 2D Materials and Applications 1 (1), 42, 2017
3D vertical TaOx/TiO2RRAM with over 103self-rectifying ratio and sub-μA operating current
CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ...
2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013
Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics
CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo
IEEE electron device letters 34 (7), 885-887, 2013
Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling
CL Lo, BA Helfrecht, Y He, DM Guzman, N Onofrio, S Zhang, D Weinstein, ...
Journal of Applied Physics 128 (8), 2020
Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature
CL Lo, M Catalano, A Khosravi, W Ge, Y Ji, DY Zemlyanov, L Wang, ...
Advanced Materials 31 (30), 1902397, 2019
Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation
Z Lin, Y Lei, S Subramanian, N Briggs, Y Wang, CL Lo, E Yalon, D Lloyd, ...
APL Materials 6 (8), 2018
Statistical model and rapid prediction of RRAM SET speed–disturb dilemma
WC Luo, JC Liu, YC Lin, CL Lo, JJ Huang, KL Lin, TH Hou
IEEE transactions on electron devices 60 (11), 3760-3766, 2013
Large-area, single-layer molybdenum disulfide synthesized at BEOL compatible temperature as Cu diffusion barrier
CL Lo, K Zhang, RS Smith, K Shah, JA Robinson, Z Chen
IEEE Electron Device Letters 39 (6), 873-876, 2018
Dynamically tunable thermal transport in polycrystalline graphene by strain engineering
Y Zeng, CL Lo, S Zhang, Z Chen, A Marconnet
Carbon 158, 63-68, 2020
Atomically thin diffusion barriers for ultra-scaled Cu interconnects implemented by 2D materials
CL Lo, KKH Smithe, R Mehta, S Chugh, E Pop, Z Chen
2017 IEEE International Reliability Physics Symposium (IRPS), 2017
Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ...
Advanced Materials Interfaces 6 (22), 1901055, 2019
BEOL compatible 2D layered materials as ultra-thin diffusion barriers for Cu interconnect technology
CL Lo, S Zhang, T Shen, J Appenzeller, Z Chen
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
BEOL compatible sub-nm diffusion barrier for advanced Cu interconnects
CL Lo, K Zhang, JA Robinson, Z Chen
2018 International Symposium on VLSI Technology, Systems and Application …, 2018
On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory
CL Lo, MC Chen, JJ Huang, TH Hou
2013 International Symposium on VLSI Technology, Systems and Application …, 2013
Symposium On VLSI Technology
CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
IEEE 2013, T166-T167, 2013
npj 2D Mater. Appl. 1, 42 (2017)
CL Lo, M Catalano, KKH Smithe, L Wang, S Zhang, E Pop, MJ Kim, ...
Modeling and Circuit Analysis of Interconnects with TaS2 Barrier/Liner
X Chen, CL Lo, MC Johnson, Z Chen, SK Gupta
2021 Device Research Conference (DRC), 1-2, 2021
Ultra-thin diffusion barrier
Z Chen, CL Lo
US Patent App. 17/681,817, 2022
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