| Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou 2013 Symposium on VLSI Technology, T166-T167, 2013 | 150 | 2013 |
| Dependence of read margin on pull-up schemes in high-density one selector–one resistor crossbar array CL Lo, TH Hou, MC Chen, JJ Huang IEEE transactions on electron devices 60 (1), 420-426, 2012 | 91 | 2012 |
| Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology CL Lo, M Catalano, KKH Smithe, L Wang, S Zhang, E Pop, MJ Kim, ... npj 2D Materials and Applications 1 (1), 42, 2017 | 62 | 2017 |
| Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling CL Lo, BA Helfrecht, Y He, DM Guzman, N Onofrio, S Zhang, D Weinstein, ... Journal of Applied Physics 128 (8), 2020 | 58 | 2020 |
| 3D vertical TaOx/TiO2RRAM with over 103self-rectifying ratio and sub-μA operating current CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ... 2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013 | 58 | 2013 |
| Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo IEEE electron device letters 34 (7), 885-887, 2013 | 54 | 2013 |
| Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature CL Lo, M Catalano, A Khosravi, W Ge, Y Ji, DY Zemlyanov, L Wang, ... Advanced materials 31 (30), 1902397, 2019 | 51 | 2019 |
| Statistical model and rapid prediction of RRAM SET speed–disturb dilemma WC Luo, JC Liu, YC Lin, CL Lo, JJ Huang, KL Lin, TH Hou IEEE transactions on electron devices 60 (11), 3760-3766, 2013 | 41 | 2013 |
| Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation Z Lin, Y Lei, S Subramanian, N Briggs, Y Wang, CL Lo, E Yalon, D Lloyd, ... APL Materials 6 (8), 2018 | 40 | 2018 |
| Large-area, single-layer molybdenum disulfide synthesized at BEOL compatible temperature as Cu diffusion barrier CL Lo, K Zhang, RS Smith, K Shah, JA Robinson, Z Chen IEEE Electron Device Letters 39 (6), 873-876, 2018 | 34 | 2018 |
| Dynamically tunable thermal transport in polycrystalline graphene by strain engineering Y Zeng, CL Lo, S Zhang, Z Chen, A Marconnet Carbon 158, 63-68, 2020 | 28 | 2020 |
| Atomically thin diffusion barriers for ultra-scaled Cu interconnects implemented by 2D materials CL Lo, KKH Smithe, R Mehta, S Chugh, E Pop, Z Chen 2017 IEEE International Reliability Physics Symposium (IRPS), 2017 | 23 | 2017 |
| Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ... Advanced Materials Interfaces 6 (22), 1901055, 2019 | 20 | 2019 |
| BEOL compatible 2D layered materials as ultra-thin diffusion barriers for Cu interconnect technology CL Lo, S Zhang, T Shen, J Appenzeller, Z Chen 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 16 | 2017 |
| BEOL compatible sub-nm diffusion barrier for advanced Cu interconnects CL Lo, K Zhang, JA Robinson, Z Chen 2018 International Symposium on VLSI Technology, Systems and Application …, 2018 | 12 | 2018 |
| Modeling and Circuit Analysis of Interconnects with TaS2 Barrier/Liner X Chen, CL Lo, MC Johnson, Z Chen, SK Gupta 2021 Device Research Conference (DRC), 1-2, 2021 | 8 | 2021 |
| On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory CL Lo, MC Chen, JJ Huang, TH Hou 2013 International Symposium on VLSI Technology, Systems and Application …, 2013 | 8 | 2013 |
| Symposium On VLSI Technology CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou IEEE 2013, T166-T167, 2013 | 6 | 2013 |
| Symp. on VLSI Technology CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou IEEE Electron Devices Society, Kyoto, 2013 | 5 | 2013 |
| Ultra-thin diffusion barrier Z Chen, CL Lo US Patent App. 17/681,817, 2022 | | 2022 |
Zhihong ChenPurdue UniversityVerified email at purdue.edu
