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Chakravarthy Gopalan
Chakravarthy Gopalan
Micron Technologies
Verified email at micron.com
Title
Cited by
Cited by
Year
A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
MN Kozicki, C Gopalan, M Balakrishnan, M Mitkova
Nanotechnology, IEEE Transactions on 5 (5), 535-544, 2006
2852006
Demonstration of conductive bridging random access memory (CBRAM) in logic CMOS process
C Gopalan, Y Ma, T Gallo, J Wang, E Runnion, J Saenz, F Koushan, ...
Solid-State Electronics 58 (1), 54-61, 2011
2432011
Nonvolatile memory based on solid electrolytes
MN Kozicki, C Gopalan, M Balakrishnan, M Park, M Mitkova
Non-Volatile Memory Technology Symposium, 2004, 10-17, 2004
1772004
Information storage using nanoscale electrodeposition of metal in solid electrolytes
MN Kozicki, M Mitkova, M Park, M Balakrishnan, C Gopalan
Superlattices and microstructures 34 (3-6), 459-465, 2003
1722003
Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes
MN Kozicki, M Balakrishnan, C Gopalan, C Ratnakumar, M Mitkova
Non-Volatile Memory Technology Symposium, 2005, 7 pp.-89, 2005
1482005
Scalable programmable structure, an array including the structure, and methods of forming the same
MN Kozicki, M Mitkova, C Gopalan
US Patent App. 10/458,551, 2003
1062003
Conductive-bridge memory (CBRAM) with excellent high-temperature retention
JR Jameson, P Blanchard, C Cheng, J Dinh, A Gallo, V Gopalakrishnan, ...
2013 IEEE International Electron Devices Meeting, 30.1. 1-30.1. 4, 2013
812013
Electrical C aracteri< ation of Solid State 8onic Memory Elements
R Symanczyk, M Balakrishnan, C Gopalan, T Happ, M Kozicki, M Kund, ...
752003
Resistive switching devices and methods of formation thereof
C Gopalan, J Shields, V Gopinath, JSY Wang, KC Tsai
US Patent 8,941,089, 2015
712015
Programmable logic circuit and method of using same
MN Kozicki, M Mitkova, C Gopalan, M Balakrishnan
US Patent 7,402,847, 2008
642008
Erase mechanism for copper oxide resistive switching memory cells with nickel electrode
TN Fang, S Kaza, S Haddad, A Chen, YC Wu, Z Lan, S Avanzino, D Liao, ...
2006 International Electron Devices Meeting, 1-4, 2006
642006
Programmable structure including an oxide electrolyte and method of forming programmable structure
MN Kozicki, M Mitkova, C Gopalan, M Balakrishnan
US Patent 7,101,728, 2006
592006
A macro model of programmable metallization cell devices
NE Gilbert, C Gopalan, MN Kozicki
Solid-state electronics 49 (11), 1813-1819, 2005
502005
Total ionizing dose retention capability of conductive bridging random access memory
Y Gonzalez-Velo, HJ Barnaby, MN Kozicki, C Gopalan, K Holbert
IEEE Electron Device Letters 35 (2), 205-207, 2014
432014
Structure of copper-doped tungsten oxide films for solid-state memory
C Gopalan, MN Kozicki, S Bhagat, SCP Thermadam, TL Alford, M Mitkova
Journal of non-crystalline solids 353 (18-21), 1844-1848, 2007
402007
Resistive switching devices having alloyed electrodes and methods of formation thereof
WT Lee, C Gopalan, Y Ma, J Shields, P Blanchard, JR Jameson, ...
US Patent 8,847,192, 2014
232014
Conducting bridge random access memory (CBRAM) device structures
Y Ma, C Gopalan, AR Gallo, J Wang
US Patent 8,426,839, 2013
202013
Contact structure and method for variable impedance memory element
C Gopalan
US Patent 8,816,314, 2014
192014
Germanium sulfide-based solid electrolytes for non-volatile memory
M Balakrishnan, MN Kozicki, C Gopalan, M Mitkova
63rd Device Research Conference Digest, 2005. DRC'05. 1, 47-48, 2005
142005
Process for making a resistive memory cell with separately patterned electrodes
D Liao, SK Pangrle, C Gopalan
US Patent 7,566,628, 2009
132009
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