| Highly reliable 50nm contact cell technology for 256Mb PRAM SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005 | 333 | 2005 |
| Highly manufacturable high density phase change memory of 64Mb and beyond SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 333 | 2004 |
| Full integration of highly manufacturable 512Mb PRAM based on 90nm technology JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 297 | 2006 |
| Co‐percolating graphene‐wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes R Chen, SR Das, C Jeong, MR Khan, DB Janes, MA Alam Advanced Functional Materials 23 (41), 5150-5158, 2013 | 261 | 2013 |
| Switching current scaling and reliability evaluation in PRAM CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ... IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, 28-29, 2004 | 221 | 2004 |
| On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients C Jeong, R Kim, M Luisier, S Datta, M Lundstrom Journal of Applied Physics 107 (2), 023707, 2010 | 208 | 2010 |
| Thermal conductivity of bulk and thin-film silicon: A Landauer approach C Jeong, S Datta, M Lundstrom Journal of Applied Physics 111 (9), 093708, 2012 | 194 | 2012 |
| Near-equilibrium transport: fundamentals and applications MS Lundstrom, C Jeong World Scientific Publishing Company, 2012 | 165 | 2012 |
| Prospects for nanowire-doped polycrystalline graphene films for ultratransparent, highly conductive electrodes C Jeong, P Nair, M Khan, M Lundstrom, MA Alam Nano letters 11 (11), 5020-5025, 2011 | 149 | 2011 |
| Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ... US Patent 7,482,616, 2009 | 146 | 2009 |
| Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films CW Jeong, JS Lee, SK Joo Japanese Journal of Applied Physics 40 (1R), 285, 2001 | 144 | 2001 |
| Full integration and cell characteristics for 64Mb nonvolatile PRAM SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004 | 141 | 2004 |
| Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006 | 123 | 2006 |
| Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach C Jeong, S Datta, M Lundstrom Journal of Applied Physics 109 (7), 073718, 2011 | 120 | 2011 |
| Phase-change random access memory device and method of operating the same CW Jeong, SY Lee, WC Jeong, JH Park, SJ Ahn, F Yeung US Patent 7,440,308, 2008 | 109 | 2008 |
| On backscattering and mobility in nanoscale silicon MOSFETs C Jeong, DA Antoniadis, MS Lundstrom IEEE Transactions on electron devices 56 (11), 2762-2769, 2009 | 71 | 2009 |
| Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications HJ Cho, HS Oh, KJ Nam, YH Kim, KH Yeo, WD Kim, YS Chung, YS Nam, ... 2016 IEEE Symposium on VLSI Technology, 2016 | 70 | 2016 |
| Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ... Japanese Journal of Applied Physics 44 (4S), 2691, 2005 | 69 | 2005 |
| Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same WC Jeong, HJ Kim, JH Park, CW Jeong US Patent 7,521,706, 2009 | 68 | 2009 |
| On the best bandstructure for thermoelectric performance: A Landauer perspective C Jeong, R Kim, MS Lundstrom Journal of Applied Physics 111 (11), 113707, 2012 | 61 | 2012 |
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
