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Jon M Slaughter
Jon M Slaughter
IBM Research
Verified email at ibm.com
Title
Cited by
Cited by
Year
Perpendicular giant magnetoresistances of Ag/Co multilayers
WP Pratt Jr, SF Lee, JM Slaughter, R Loloee, PA Schroeder, J Bass
Physical review letters 66 (23), 3060, 1991
9031991
A 4-Mb toggle MRAM based on a novel bit and switching method
BN Engel, J Akerman, B Butcher, RW Dave, M DeHerrera, M Durlam, ...
IEEE Transactions on Magnetics 41 (1), 132-136, 2005
7142005
Progress and outlook for MRAM technology
S Tehrani, JM Slaughter, E Chen, M Durlam, J Shi, M DeHerren
IEEE Transactions on Magnetics 35 (5), 2814-2819, 1999
6381999
Magnetoresistive random access memory using magnetic tunnel junctions
S Tehrani, JM Slaughter, M Deherrera, BN Engel, ND Rizzo, J Salter, ...
Proceedings of the IEEE 91 (5), 703-714, 2003
6342003
Magnetoresistive random access memory
D Apalkov, B Dieny, JM Slaughter
Proceedings of the IEEE 104 (10), 1796-1830, 2016
5992016
Recent developments in magnetic tunnel junction MRAM
S Tehrani, B Engel, JM Slaughter, E Chen, M DeHerrera, M Durlam, ...
IEEE Transactions on magnetics 36 (5), 2752-2757, 2000
4262000
High density submicron magnetoresistive random access memory
S Tehrani, E Chen, M Durlam, M DeHerrera, JM Slaughter, J Shi, ...
Journal of Applied Physics 85 (8), 5822-5827, 1999
2841999
A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
M Durlam, PJ Naji, A Omair, M DeHerrera, J Calder, JM Slaughter, ...
IEEE Journal of Solid-State Circuits 38 (5), 769-773, 2003
2502003
The science and technology of magnetoresistive tunneling memory
BN Engel, ND Rizzo, J Janesky, JM Slaughter, R Dave, M DeHerrera, ...
IEEE Transactions on Nanotechnology 1 (1), 32-38, 2002
1902002
Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
M Durlam, EY Chen, SN Tehrani, JM Slaughter, G Kerszykowski, ...
US Patent 6,211,090, 2001
1802001
Magnetic random access memory and fabricating method thereof
M Durlam, G Kerszykowski, J Slaughter, T Zhu, E Chen, SN Tehrani, ...
US Patent 5,940,319, 1999
1761999
A fully functional 64 Mb DDR3 ST-MRAM built on 90 nm CMOS technology
ND Rizzo, D Houssameddine, J Janesky, R Whig, FB Mancoff, ...
IEEE Transactions on Magnetics 49 (7), 4441-4446, 2013
1632013
Low-frequency magnetic and resistance noise in magnetic tunnel junctions
L Jiang, ER Nowak, PE Scott, J Johnson, JM Slaughter, JJ Sun, RW Dave
Physical Review B 69 (5), 054407, 2004
1632004
Magnetic element with dual magnetic states and fabrication method thereof
EY Chen, JM Slaughter, M Durlam, M DeHerrera, SN Tehrani
US Patent 6,233,172, 2001
1572001
A 0.18/spl mu/m 4 Mbit toggling MRAM
M Durlam, D Addie, J Akerman, B Butcher, P Brown, J Chan, M DeHerrera, ...
2004 International Conference on Integrated Circuit Design and Technology …, 2004
1522004
Magnetic random access memory and fabricating method thereof
M Durlam, G Kerszykowski, J Slaughter, T Zhu, E Chen, SN Tehrani, ...
US Patent 6,174,737, 2001
1482001
Magnetic element with improved field response and fabricating method thereof
EY Chen, JM Slaughter, J Shi
US Patent 6,292,389, 2001
1432001
Fundamentals of MRAM technology
JM Slaughter, RW Dave, M DeHerrera, M Durlam, BN Engel, J Janesky, ...
Journal of superconductivity 15 (1), 19-25, 2002
1422002
Materials for magnetoresistive random access memory
JM Slaughter
Annual Review of Materials Research 39 (1), 277-296, 2009
1312009
Magnetic tunnel junction element structures and methods for fabricating the same
J Sun, RW Dave, JM Slaughter, J Akerman
US Patent 7,098,495, 2006
1312006
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