David Brunco
David Brunco
Unknown affiliation
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Cited by
Cited by
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
Semiconductor structure with self-aligned wells and multiple channel materials
DP Brunco
US Patent 9,257,557, 2016
Complete experimental test of kinetic models for rapid alloy solidification
JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson
Acta materialia 48 (20), 4797-4811, 2000
High performance Ge pMOS devices using a Si-compatible process flow
P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
High-performance deep submicron Ge pMOSFETs with halo implants
G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ...
IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p n Junctions
G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE transactions on electron devices 55 (9), 2287-2296, 2008
Temperature measurements of polyimide during KrF excimer laser ablation
DP Brunco, MO Thompson, CE Otis, PM Goodwin
Journal of applied Physics 72 (9), 4344-4350, 1992
Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities
B Govoreanu, DP Brunco, J Van Houdt
Solid-state electronics 49 (11), 1841-1848, 2005
Germanium partitioning in silicon during rapid solidification
DP Brunco, MO Thompson, DE Hoglund, MJ Aziz, HJ Gossmann
Journal of applied physics 78 (3), 1575-1582, 1995
Nonequilibrium partitioning during rapid solidification of Si As alloys
JA Kittl, MJ Aziz, DP Brunco, MO Thompson
Journal of crystal growth 148 (1-2), 172-182, 1995
Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ALD HfO/sub 2/metal gate stacks under positive constant voltage stress
R Degraeve, T Kauerauf, M Cho, M Zahid, LA Ragnarsson, DP Brunco, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Ch. Dieker, EK Evangelou, S. Galata, M. Houssa, and MM Heyns
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515, 6337, 2007
Silicides and germanides for nano-CMOS applications
JA Kittl, K Opsomer, C Torregiani, C Demeurisse, S Mertens, DP Brunco, ...
Materials Science and Engineering: B 154, 144-154, 2008
Electron energy band alignment at interfaces of (100) Ge with rare-earth oxide insulators
VV Afanas’ ev, S Shamuilia, A Stesmans, A Dimoulas, Y Panayiotatos, ...
Applied physics letters 88 (13), 132111, 2006
High performance 70-nm germanium pMOSFETs with boron LDD implants
G Hellings, J Mitard, G Eneman, B De Jaeger, DP Brunco, D Shamiryan, ...
IEEE Electron Device Letters 30 (1), 88-90, 2008
Germanium: The past and possibly a future material for microelectronics
DP Brunco, B De Jaeger, G Eneman, A Satta, V Terzieva, L Souriau, ...
ECS Transactions 11 (4), 479, 2007
Materials and electrical characterization of molecular beam deposited and bilayers on germanium
DP Brunco, A Dimoulas, N Boukos, M Houssa, T Conard, K Martens, ...
Journal of Applied Physics 102 (2), 024104, 2007
Scaling to sub-1 nm equivalent oxide thickness with hafnium oxide deposited by atomic layer deposition
A Delabie, M Caymax, B Brijs, DP Brunco, T Conard, E Sleeckx, ...
Journal of the Electrochemical Society 153 (8), F180, 2006
Ruthenium gate electrodes on and : Sensitivity to hydrogen and oxygen ambients
L Pantisano, T Schram, Z Li, JG Lisoni, G Pourtois, S De Gendt, ...
Applied physics letters 88 (24), 243514, 2006
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