|HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector|
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 International Electron Devices Meeting, 20.7. 1-20.7. 4, 2012
|A physics-based compact model of metal-oxide-based RRAM DC and AC operations|
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE transactions on electron devices 60 (12), 4090-4097, 2013
|RRAM crossbar array with cell selection device: A device and circuit interaction study|
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE transactions on Electron Devices 60 (2), 719-726, 2012
|Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems|
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
|Reconfigurable nonvolatile logic operations in resistance switching crossbar array for large‐scale circuits|
P Huang, J Kang, Y Zhao, S Chen, R Han, Z Zhou, Z Chen, W Ma, M Li, ...
Advanced Materials 28 (44), 9758-9764, 2016
|Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies|
C Li, B Gao, Y Yao, X Guan, X Shen, Y Wang, P Huang, L Liu, X Liu, J Li, ...
Advanced Materials 29 (10), 1602976, 2017
|Physical mechanisms of endurance degradation in TMO-RRAM|
B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
2011 International electron devices meeting, 12.3. 1-12.3. 4, 2011
|A SPICE model of resistive random access memory for large-scale memory array simulation|
H Li, P Huang, B Gao, B Chen, X Liu, J Kang
IEEE Electron Device Letters 35 (2), 211-213, 2013
|Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model|
H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, XY Liu, JF Kang, ...
2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015
|Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching|
B Gao, JF Kang, YS Chen, FF Zhang, B Chen, P Huang, LF Liu, XY Liu, ...
2011 International Electron Devices Meeting, 17.4. 1-17.4. 4, 2011
|A learnable parallel processing architecture towards unity of memory and computing|
H Li, B Gao, Z Chen, Y Zhao, P Huang, H Ye, L Liu, X Liu, J Kang
Scientific reports 5 (1), 1-8, 2015
|Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM|
P Huang, B Chen, YJ Wang, FF Zhang, L Shen, R Liu, L Zeng, G Du, ...
2013 IEEE International electron devices meeting, 22.5. 1-22.5. 4, 2013
|A physical based analytic model of RRAM operation for circuit simulation|
P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012
|Optimized learning scheme for grayscale image recognition in a RRAM based analog neuromorphic system|
Z Chen, B Gao, Z Zhou, P Huang, H Li, W Ma, D Zhu, L Liu, X Liu, J Kang, ...
2015 IEEE International Electron Devices Meeting (IEDM), 17.7. 1-17.7. 4, 2015
|Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing|
P Huang, D Zhu, S Chen, Z Zhou, Z Chen, B Gao, L Liu, X Liu, J Kang
IEEE Transactions on Electron Devices 64 (2), 614-621, 2017
|Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing|
B Gao, H Wu, W Wu, X Wang, P Yao, Y Xi, W Zhang, N Deng, P Huang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2017
|Low-power resistive switching characteristic in HfO2/TiOx Bi-layer resistive random-access memory|
X Ding, Y Feng, P Huang, L Liu, J Kang
Nanoscale Research Letters 14 (1), 1-7, 2019
|BEOL based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond|
H Lv, X Xu, P Yuan, D Dong, T Gong, J Liu, Z Yu, P Huang, K Zhang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2017
|Design and hardware implementation of neuromorphic systems with RRAM synapses and threshold-controlled neurons for pattern recognition|
Y Jiang, P Huang, D Zhu, Z Zhou, R Han, L Liu, X Liu, J Kang
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (9), 2726-2738, 2018
|Metal oxide resistive random access memory based synaptic devices for brain-inspired computing|
B Gao, J Kang, Z Zhou, Z Chen, P Huang, L Liu, X Liu
Japanese Journal of Applied Physics 55 (4S), 04EA06, 2016