Ac conductivity and dielectric properties of amorphous Se80Te20−xGex chalcogenide glass film compositions ASF N.A. Hegab, M.A. Afifi, H.E. Atyia Journal of Alloys and Compounds 477 (Issues 1–2), 925, 2009 | 123 | 2009 |
Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system ASF M.A. Afifi, N.A. Hegab, H.E. Atyia Journal of Alloys and Compounds 463 (Issues 1–2), 10, 2008 | 36 | 2008 |
Non-isothermal crystallization kinetics of ternary Se90Te10-xPbx glasses ASF H.E. Atyia Journal of Crystal Growth 436, 125, 2016 | 34 | 2016 |
Electrical and switching properties of Se85Te15−xSbx (0 ≤ x ≤ 6 at.wt%) thin films ASF M. Fadel, N.A. Hegab, I.S. Yahia, A.M. Salem Journal of Alloys and Compounds 509 (Issue 29), 7663, 2011 | 26 | 2011 |
Electrical Conductivity and Dielectric Properties of Se85Te15-xSbx (x = 0 at.%, 2 at.%, 4 at.%, and 6 at.%)Thin Films ASF N.A. Hegab, M. Fadel, I.S. Yahia, A.M. Salem Journal of ELECTRONIC MATERIALS 42 (12), 3397, 2013 | 23 | 2013 |
Glass transition and crystallization study of Te additive Se-Bi chalcogenide glass HEA A.S. Farid Non-Crystalline Solids 408, 123, 2015 | 18 | 2015 |
Memory switching of chalcogenide glass Se85 Te15 X5 (x= In, Sn) films NA Hegab, AS Farid, E Abd El-Wahabb, H Magdy Journal of Alloys and Compounds 743, 36-43, 2018 | 13 | 2018 |
KINETICS OF NON-ISOTHERMAL CRYSTALLIZATION OF TERNARY Se85Te15−xSbx GLASSY ALLOYS ASF I.S. YAHIA, A.M.Shakra , M. Fadel , N.A. Hegab , A.M. Salem Chalcogenide Letters 8 (8), 453, 2011 | 12 | 2011 |
Optical, dielectric and opto-electrical study of Se-Te-Ge glassy thin films HE Atyiaa, SS Fouada, P Sharma, AS Farida, NA Hegaba Jaypee University of Information Technology, Solan, HP, 2018 | 11 | 2018 |
Conduction mechanism and dielectric properties of a Se80Ge20−x Cd x (x = 0, 6 and 12 at.wt%) films AM Shakra, AS Farid, NA Hegab, MA Afifi, AM Alrebati Applied Physics A 122, 1-10, 2016 | 9 | 2016 |
Electrical and Switching Phenomenon of Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Amorphous System MA Afifi, NA Hegab, AM Shakra, AS Farid, AM Alrebati Journal of Electronic Materials 44, 87-95, 2015 | 9 | 2015 |
Physical, optical and dielectric properties of Se85Te10X5 (X= Sn, In) films AS Farid, NA Hegab Optik 195, 163138, 2019 | 8 | 2019 |
The Effect of Annealing Above Glass Transition Temperature on the Optical Properties of Se85Te10Bi5 Thin Films HEAAS Farid Journal of Electronic materials 45 (1), 357, 2016 | 8 | 2016 |
Effect of annealing temperature on the optical characteristics of Se80Te15Ge5 films for opto-electronic applications AS Farid, MM El-Nahass Optics & Laser Technology 156, 108598, 2022 | 7 | 2022 |
Glass transition kinetics aspects of amorphous Se60Ge15As25 and Se60Ge15Sn25 compositions HE Atyia, NA Hegab, AS Farid Journal of Thermal Analysis and Calorimetry 131, 1793-1802, 2018 | 6 | 2018 |
Glass transition, thermal stability and glass-forming tendency of Se85Te10X5 (X = In, Sn) chalcogenide glasses EAEWHM A.S.Farid, N.A.Hegab , International Journal of Scientific & Engineering Research 7 (2), 536, 2016 | 6* | 2016 |
Synthesis and characterization g‐C3N4‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications MI Muhammed, IS Yahia, AS Farid Journal of Applied Polymer Science 139 (43), e53064, 2022 | 5 | 2022 |
Investigation and evaluation of the glass stability criteria for Se60Ge15X25 (X = Sn, As) compositions ASF H. E. Atyia J. Therm Anal Calorim 10, 2017 | 5 | 2017 |
Compositional Dependence of the Optical Propertiesof Amorphous Semiconducting Glass Se80Ge20-_xCdx (0 < x <12 at.%) Thin Films AMA N.A. Hegab, A.S. Farid, A.M. Shakra, M.A. Afifi Journal of Electronic materials 45 (7), 3332, 2016 | 5 | 2016 |
DC electrical conductivity and resistive memory switching in Se36 Sb31Cu33 films AS Farid, NA Hegab, E Abd El-Wahabb Journal of Alloys and Compounds 876, 159805, 2021 | 2 | 2021 |