Javier Mateos (ORCID: 0000-0003-4041-7145)

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Tomás GonzálezProfessor of Electronics - University of Salamanca (Spain)Verified email at usal.es
Ignacio Iñiguez-de-la-TorreProfesor Titular de Universidad (Salamanca)Verified email at usal.es
Beatriz G. VasalloUniversidad de SalamancaVerified email at usal.es
sylvain bollaertIemn université Lille 1Verified email at iemn.univ-lille1.fr
Susana PérezProfessor of Electronics, Applied Physics Department, University of SalamancaVerified email at usal.es
Luca VARANIProfessor of Electronics, University of MontpellierVerified email at umontpellier.fr
Christophe Gaquiereprofesseur université Lille 1Verified email at iemn.univ-lille1.fr
Jean-Francois MillithalerUniversity of Massachusetts LowellVerified email at uml.edu
Guillaume Ducournau (ORCID 0000-0...Professor, IEMN-CNRS, Université Lille / Polytech'Lille Graduate SchoolVerified email at univ-lille.fr
X. WallartDR CNRS, IEMNVerified email at univ-lille.fr
Aimin Songmanchester, Lund, Jinan, MunichVerified email at manchester.ac.uk
Helena RodillaChalmers University of TechnologyVerified email at chalmers.se
Christophe PalermoInstitut d'Electronique et des Systèmes, Université de MontpellierVerified email at univ-montp2.fr
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences WARSAW POLAND & L2C CNRS Montpellier FRANCEVerified email at umontpellier.fr
HÉCTOR SÁNCHEZ MARTÍNVerified email at usal.es
Raul RengelUniversidad de SalamancaVerified email at usal.es
Martin MargalaProfessor and Director, School of Computing and Informatics, University of Louisiana at LafayetteVerified email at louisiana.edu
Maria Jesus Martin MartinezProfessor of Electronics (University of Salamanca)Verified email at usal.es
Per-Åke NilssonChalmers University of TechnologyVerified email at chalmers.se
Óscar GarcíaTécnico Superior, Observatorio de YebesVerified email at mitma.es

Javier Mateos (ORCID: 0000-0003-4041-7145)

Universidad de Salamanca, Catedrático de Electrónica

Verified email at usal.es - Homepage

Electronic devices Monte Carlo simulation THz devices


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Voltage tuneable terahertz emission from a ballistic nanometer transistor J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ... Journal of applied physics 97 (6), 064307, 2005	177	2005
Monte Carlo simulator for the design optimization of low-noise HEMTs J Mateos, T González, D Pardo, V Hoël, A Cappy IEEE Transactions on Electron Devices 47 (10), 1950-1956, 2000	131	2000
Improved Monte Carlo algorithm for the simulation of/spl delta/-doped AlInAs/GaInAs HEMTs J Mateos, T González, D Pardo, V Hoel, H Happy, A Cappy IEEE Transactions on Electron Devices 47 (1), 250-253, 2000	122	2000
Microwave detection at 110 GHz by nanowires with broken symmetry C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ... Nano Letters 5 (7), 1423-1427, 2005	117	2005
Microscopic modeling of nonlinear transport in ballistic nanodevices J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ... IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003	106	2003
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ... Nanotechnology 14 (2), 117, 2003	106	2003
Operation and high-frequency performance of nanoscale unipolar rectifying diodes J Mateos, BG Vasallo, D Pardo, T González Applied Physics Letters 86 (21), 212103, 2005	105	2005
A 520–620-GHz Schottky receiver front-end for planetary science and remote sensing with 1070 K–1500 K DSB noise temperature at room temperature J Treuttel, L Gatilova, A Maestrini, D Moro-Melgar, F Yang, F Tamazouzt, ... IEEE transactions on terahertz science and technology 6 (1), 148-155, 2015	95	2015
Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors T González, C González, J Mateos, D Pardo, L Reggiani, OM Bulashenko, ... Physical review letters 80 (13), 2901, 1998	92	1998
Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes S Pérez, T González, D Pardo, J Mateos Journal of applied physics 103 (9), 094516, 2008	87	2008
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ... IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007	85	2007
Phonon black-body radiation limit for heat dissipation in electronics J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ... Nature materials 14 (2), 187-192, 2015	80	2015
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis J Mateos, T González, D Pardo, V Hoel, A Cappy Semiconductor science and technology 14 (9), 864, 1999	69	1999
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ... Journal of Applied Physics 113 (3), 034305, 2013	67	2013
Nonlinear effects in T-branch junctions J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ... IEEE Electron Device Letters 25 (5), 235-237, 2004	66	2004
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ... Semiconductor science and technology 22 (6), 663, 2007	63	2007
Searching for THz Gunn oscillations in GaN planar nanodiodes A Íñiguez-de-la-Torre, I Iniguez-De-La-Torre, J Mateos, T González, ... Journal of Applied Physics 111 (11), 113705, 2012	58	2012
Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport T González, OM Bulashenko, J Mateos, D Pardo, L Reggiani Physical Review B 56 (11), 6424, 1997	51	1997
Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications JM Lopez, T González, D Pardo, S Bollaert, T Parenty, A Cappy IEEE transactions on Electron Devices 51 (4), 521-528, 2004	50	2004
100nm InAlAs/InGaAs double-gate HEMT using transferred substrate N Wichmann, I Duszynski, S Bollaert, J Mateos, X Wallart, A Cappy IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004	44	2004

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