Low-temperature method for thermochromic high ordered VO2 phase formation V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk Materials Letters 68, 215-217, 2012 | 86 | 2012 |
Oxidation of tungsten surface with reactive oxygen plasma A Romanyuk, V Melnik, P Oelhafen Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005 | 37 | 2005 |
Structural transformation and functional properties of vanadium oxide films after low-temperature annealing Y Goltvyanskyi, I Khatsevych, A Kuchuk, V Kladko, V Melnik, P Lytvyn, ... Thin Solid Films 564, 179-185, 2014 | 33 | 2014 |
Si Segregation into Pr2O3 and La2O3 high-k gate oxides G Lippert, J Dąbrowski, V Melnik, R Sorge, C Wenger, P Zaumseil, ... Applied Physics Letters 86 (4), 2005 | 32 | 2005 |
Influence of in situ ultrasound treatment during ion implantation on formation of silver nanoparticles in silica A Romanyuk, V Spassov, V Melnik Journal of applied physics 99 (3), 2006 | 29 | 2006 |
Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states A Romanyuk, V Melnik, Y Olikh, J Biskupek, U Kaiser, M Feneberg, ... Journal of Luminescence 130 (1), 87-91, 2010 | 28 | 2010 |
Use of ultrasound for metal cluster engineering in ion implanted silicon oxide A Romanyuk, P Oelhafen, R Kurps, V Melnik Applied physics letters 90 (1), 2007 | 28 | 2007 |
Transformation of the structure of silicon oxide during the formation of Si nanoinclusions under thermal annealings IP Lisovskyy, MV Voitovich, AV Sarikov, VG Litovchenko, VP Melnyk, ... Ukrainian Journal of Physics 54 (4), 383-390, 2009 | 27 | 2009 |
Thermal stability of films grown on Si(100) substrate A Goryachko, JP Liu, D Krüger, HJ Osten, E Bugiel, R Kurps, V Melnik Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002 | 22 | 2002 |
Influence of N2/H2 plasma treatment on chemical vapor deposited TiN multilayer structures for advanced CMOS technologies V Melnik, D Wolanski, E Bugiel, A Goryachko, S Chernjavski, D Krüger Materials Science and Engineering: B 102 (1-3), 358-361, 2003 | 20 | 2003 |
Influence of in situ ultrasound treatment during ion implantation on amorphization and junction formation in silicon D Krüger, B Romanyuk, V Melnik, Y Olikh, R Kurps Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 20 | 2002 |
Diffusion and segregation of shallow As and Sb junctions in silicon D Krüger, H Rücker, B Heinemann, V Melnik, R Kurps, D Bolze Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 19 | 2004 |
Structure of the modified surface layer formed by ion bombardment of SiO2 films IP Lisovskii, VG Litovchenko, VB Lozinskii, VP Melnik, SI Frolov Thin Solid Films 247 (2), 264-270, 1994 | 17 | 1994 |
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments B Romanjuk, V Kladko, V Melnik, V Popov, V Yukhymchuk, A Gudymenko, ... Materials science in semiconductor processing 8 (1-3), 171-175, 2005 | 14 | 2005 |
Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation H Rücker, B Heinemann, R Barth, D Bolze, V Melnik, D Krüger, R Kurps Applied physics letters 82 (5), 826-828, 2003 | 14 | 2003 |
Effects of low temperature anneals on the photovoltage in Si nanocrystals O Korotchenkov, A Podolian, V Kuryliuk, B Romanyuk, V Melnik, ... Journal of Applied Physics 111 (6), 2012 | 13 | 2012 |
Characteristics of silicon p–n junction formed by ion implantation with in situ ultrasound treatment VP Melnik, YM Olikh, VG Popov, BM Romanyuk, YV Goltvyanskii, ... Materials Science and Engineering: B 124, 327-330, 2005 | 13 | 2005 |
Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon O Oberemok, V Kladko, V Litovchenko, B Romanyuk, V Popov, V Melnik, ... Semiconductor Science and Technology 29 (5), 055008, 2014 | 12 | 2014 |
Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formation S Buschbaum, O Fursenko, D Bolze, D Wolansky, V Melnik, J Nieß, ... Microelectronic engineering 76 (1-4), 311-317, 2004 | 12 | 2004 |
Effect of structural disorder on the modification of V–V and V–O bond lengths at the metal-dielectric phase transition in VO2 thin films VV Strelchuk, OF Kolomys, DM Maziar, VP Melnik, BM Romanyuk, ... Materials Science in Semiconductor Processing 174, 108224, 2024 | 10 | 2024 |