Follow
Jamil Akhtar
Jamil Akhtar
Chief Executive, Institute for Innovations in Science and Technology, Pilani, India
Verified email at ceeri.res.in
Title
Cited by
Cited by
Year
Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor
V Kumar, AS Maan, J Akhtar
Journal of Vacuum Science & Technology B 32 (4), 2014
772014
Fabrication of electron beam physical vapor deposited polysilicon piezoresistive MEMS pressure sensor
K Singh, R Joyce, S Varghese, J Akhtar
Sensors and Actuators A: Physical 223, 151-158, 2015
762015
A digital hygrometer for trace moisture measurement
T Islam, AU Khan, J Akhtar, MZU Rahman
IEEE Transactions on Industrial Electronics 61 (10), 5599-5605, 2014
752014
Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices
J Singh, S Ranwa, J Akhtar, M Kumar
AIP Advances 5 (6), 2015
702015
Epitaxial 4H–SiC based Schottky diode temperature sensors in ultra-low current range
V Kumar, J Verma, AS Maan, J Akhtar
Vacuum 182, 109590, 2020
592020
Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors
V Kumar, S Pawar, AS Maan, J Akhtar
Journal of Vacuum Science & Technology B 33 (5), 2015
582015
Distributed MEMS mass-sensor based on piezoelectric resonant micro-cantilevers
P Joshi, S Kumar, VK Jain, J Akhtar, J Singh
Journal of Microelectromechanical Systems 28 (3), 382-389, 2019
542019
Synthesis, phase to phase deposition and characterization of rutile nanocrystalline titanium dioxide (TiO2) thin films
SK Gupta, J Singh, K Anbalagan, P Kothari, RR Bhatia, PK Mishra, ...
Applied Surface Science 264, 737-742, 2013
482013
Capacitance roll‐off and frequency‐dispersion capacitance–conductance phenomena in field plate and guard ring edge‐terminated Ni/SiO2/4H‐nSiC Schottky …
V Kumar, N Kaminski, AS Maan, J Akhtar
physica status solidi (a) 213 (1), 193-202, 2016
462016
Synthesis and applications of ZnO nanowire: A review
S Bagga, J Akhtar, S Mishra
AIP Conference Proceedings 1989 (1), 2018
432018
Fabrication of poly (vinylidene fluoride-trifluoroethylene)–Zinc oxide based piezoelectric pressure sensor
SC Karumuthil, K Singh, U Valiyaneerilakkal, J Akhtar, S Varghese
Sensors and Actuators A: Physical 303, 111677, 2020
422020
Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode
SK Gupta, A Azam, J Akhtar
Physica B: Condensed Matter 406 (15-16), 3030-3035, 2011
422011
Investigation of structural and magnetic properties of Ni, NiFe and NiFe2O4 thin films
J Singh, SK Gupta, AK Singh, P Kothari, RK Kotnala, J Akhtar
Journal of magnetism and magnetic materials 324 (6), 999-1005, 2012
412012
MeV ion-induced movement of lattice disorder in single crystalline silicon
P Sen, J Akhtar, FM Russell
Europhysics Letters 51 (4), 401, 2000
412000
Room temperature single walled carbon nanotubes (SWCNT) chemiresistive ammonia gas sensor
BS Dasari, WR Taube, PB Agarwal, M Rajput, A Kumar, J Akhtar
Sensors & Transducers 190 (7), 24, 2015
402015
Effect of semiconductor on sensitivity of a graphene-based surface plasmon resonance biosensor
G Mohanty, J Akhtar, BK Sahoo
Plasmonics 11, 189-196, 2016
392016
Capacitance–conductance spectroscopic investigation of interfacial oxide layer in Ni/4H–SiC (0 0 0 1) Schottky diode
SK Gupta, B Shankar, WR Taube, J Singh, J Akhtar
Physica B: Condensed Matter 434, 44-50, 2014
392014
MEMS impedance flow cytometry designs for effective manipulation of micro entities in health care applications
M Kumar, S Yadav, A Kumar, NN Sharma, J Akhtar, K Singh
Biosensors and Bioelectronics 142, 111526, 2019
362019
An oscillator-based active bridge circuit for interfacing capacitive sensors with microcontroller compatibility
AU Khan, T Islam, J Akhtar
IEEE Transactions on Instrumentation and Measurement 65 (11), 2560-2568, 2016
362016
Design, fabrication, and characterization of Ni/4H-SiC (0001) Schottky diodes array equipped with field plate and floating guard ring edge termination structures
SK Gupta, N Pradhan, C Shekhar, J Akhtar
IEEE transactions on semiconductor manufacturing 25 (4), 664-672, 2012
342012
The system can't perform the operation now. Try again later.
Articles 1–20