The Effect of Cr3+ and Mg2+ impurities on thermoluminescence and deep traps in β-Ga2O3 crystals A Luchechko, V Vasyltsiv, L Kostyk, O Tsvetkova, B Pavlyk ECS Journal of Solid State Science and Technology 9 (4), 045008, 2020 | 35 | 2020 |
Correlation between electrical conductivity and luminescence properties in β-Ga2O3: Cr3+ and β-Ga2O3: Cr, Mg single crystals V Vasyltsiv, A Luchechko, Y Zhydachevskyy, L Kostyk, R Lys, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 33 | 2021 |
Ga-modified As2Se3–Te glasses for active applications in IR photonics Y Shpotyuk, C Boussard-Pledel, V Nazabal, R Chahal, J Ari, B Pavlyk, ... Optical Materials 46, 228-232, 2015 | 29 | 2015 |
Thermally stimulated luminescence and conductivity of β-Ga2O3 crystals A Luchechko, V Vasyltsiv, L Kostyk, O Tsvetkova, B Pavlyk Journal of nano-and electronic physics, 03035-1-03035-7, 2019 | 16 | 2019 |
Dual‐Channel Solar‐Blind UV Photodetector Based on β‐Ga2O3 A Luchechko, V Vasyltsiv, L Kostyk, B Pavlyk physica status solidi (a) 216 (22), 1900444, 2019 | 14 | 2019 |
Luminescence and ESR characteristics of γ-irradiated Lu3Al5O12: Ce single crystalline film scintillators Y Zorenko, T Zorenko, V Gorbenko, B Pavlyk, V Laguta, M Nikl, ... Radiation Measurements 45 (3-6), 419-421, 2010 | 14 | 2010 |
Properties of cesium iodide prepared by different purification methods I Garapyn, I Hud, B Pavlyk Radiation measurements 38 (4-6), 475-479, 2004 | 14 | 2004 |
Influence of thermal treatment and γ-radiation on absorption, luminescence and scintillation properties of Lu3Al5O12: Ce single crystalline films Y Zorenko, B Pavlyk, R Turchak, T Zorenko, V Gorbenko, I Konstankevych, ... Radiation measurements 42 (4-5), 557-560, 2007 | 12 | 2007 |
Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures BV Pavlyk, DP Slobodzyan, AS Hrypa, RM Lys, MO Kushlyk, ... Semiconductors 46, 993-997, 2012 | 10 | 2012 |
Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing B Pavlyk, M Kushlyk, D Slobodzyan Nanoscale Research Letters 12, 1-8, 2017 | 9 | 2017 |
Electrophysical characteristics of near-surface layers in p-Si crystals with sputtered Al films and subjected to elastic deformation B Pavlyk, M Kushlyk, R Didyk, J Shykorjak, D Slobodzyan, B Kulyk arXiv preprint arXiv:1309.0983, 2013 | 8 | 2013 |
Features of influence of X-radiation and magnetic field on the electrical characteristics of barrier structures based on p-Si with dislocation, designed for solar energy DP Slobodzyan, BV Pavlyk, MO Kushlyk Журнал нано-и электронной физики 7 (4), 04051-04051, 2015 | 7 | 2015 |
Change in surface conductivity of elastically deformed p-Si crystals irradiated by X-rays R Lys, B Pavlyk, R Didyk, J Shykorjak Nanoscale Research Letters 12, 1-7, 2017 | 6 | 2017 |
Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals BV Pavlyk, RM Lys, RI Didyk, JA Shykorjak Semiconductors 49, 625-629, 2015 | 6 | 2015 |
The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures BV Pavlyk, AS Hrypa, DP Slobodzyan, RM Lys, JA Shykoryak, RI Didyk Semiconductors 45, 599-602, 2011 | 6 | 2011 |
Luminescence and Conductivity of β-Ga2O3 and β-Ga2O3:Mg Single Crystals. V Vasyltsiv, L Kostyk, O Tsvetkova, R Lys, M Kushlyk, B Pavlyk, ... Acta Physica Polonica: A 141 (4), 2022 | 5 | 2022 |
Luminescence OF β-Ga2O3 crystals doped with chromium A Luchechko, V Vasyltsiv, L Kostyk, OV Tsvetkova, BV Pavlyk J. Phys. Stud 23 (3), 3301, 2019 | 5 | 2019 |
Effect of elastic deformation and the magnetic field on the electrical conductivity of p-Si crystals R Lys, B Pavlyk, R Didyk, J Shykorjak, I Karbovnyk Applied Nanoscience 8, 885-890, 2018 | 5 | 2018 |
About the nature of electroluminescence centers in plastically deformed crystals of p-type silicon BV Pavlyk, MO Kushlyk, DP Slobodzyan Journal of Nano-and Electronic Physics 7 (3), 3043-1, 2015 | 5 | 2015 |
THE STUDY OF X-STIMULATED EVOLUTION OF DEFECTS IN p-Si CRYSTALS THROUGH CAPACITIVE-MODULATION SPECTROSCOPY. BV Pavlyk, DP Slobodzyan, RM Lys, JA Shykoryak, RI Didyk Journal of Physical Studies 18 (4), 2014 | 4 | 2014 |