متابعة
Patrick Theofanis
Patrick Theofanis
بريد إلكتروني تم التحقق منه على intel.com
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Nonadiabatic study of dynamic electronic effects during brittle fracture of silicon
PL Theofanis, A Jaramillo-Botero, WA Goddard III, H Xiao
Physical review letters 108 (4), 045501, 2012
402012
Understanding β-hydride eliminations from heteroatom functional groups
PL Theofanis, WA Goddard III
Organometallics 30 (18), 4941-4948, 2011
242011
Electron dynamics of shocked polyethylene crystal
PL Theofanis, A Jaramillo-Botero, WA Goddard III, TR Mattsson, ...
Physical Review B 85 (9), 094109, 2012
212012
Orientational preference in multilayer block copolymer nanomeshes with respect to layer-to-layer commensurability
CL Carpenter, S Nicaise, PL Theofanis, D Shykind, KK Berggren, ...
Macromolecules 50 (20), 8258-8266, 2017
162017
Non-adiabatic dynamics modeling framework for materials in extreme conditions
H Xiao, A Jaramillo-Botero, PL Theofanis, WA Goddard III
Mechanics of Materials 90, 243-252, 2015
112015
Large-scale molecular simulations of hypervelocity impact of materials
A Jaramillo-Botero, Q An, PL Theofanis, WA Goddard III
Procedia Engineering 58, 167-176, 2013
102013
In silico design of a thermal atomic layer etch process of cobalt
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
Journal of Vacuum Science & Technology A 39 (2), 2021
52021
Adhesion limits and design criteria for nanorelays
KL Lin, GLW Cross, P Gleeson, JP de Silva, A Levander, JA Munoz, ...
IEEE Transactions on Electron Devices 63 (1), 465-470, 2015
52015
Mechanism of thermal atomic layer etch of W metal using sequential oxidation and chlorination: A first-principles study
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
ACS applied materials & interfaces 12 (32), 36670-36680, 2020
42020
Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si (100) and W (110) substrates
MJ King, PL Theofanis, PC Lemaire, EE Santiso, GN Parsons
Journal of Vacuum Science & Technology A 36 (6), 2018
42018
Modeling photon, electron, and chemical interactions in a model hafnium oxide nanocluster EUV photoresist
PL Theofanis, JM Blackwell, ME Krysak, F Gstrein
Extreme Ultraviolet (EUV) Lithography XI 11323, 92-105, 2020
32020
Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator
PL Theofanis, O Tazetdinov
Optical and EUV Nanolithography XXXV, PC120510I, 2022
22022
Magnetic nanomechanical devices for stiction compensation
JA Munoz, DE Nikonov, KJ Kuhn, P Theofanis, C Pawashe, K Lin, S Kim
US Patent 9,926,193, 2018
22018
Transistors with monocrystalline metal chalcogenide channel materials
C Naylor, C Dorow, K O'brien, S Lee, K Maxey, AV Penumatcha, T Gosavi, ...
US Patent App. 17/129,486, 2022
12022
Vertical interconnect methods for stacked device architectures using direct self assembly with high operational parallelization and improved scalability
AD Lilak, P Theofanis, P Morrow, R Mehandru, SM Cea
US Patent 11,011,537, 2021
12021
Supplemental information for: non-adiabatic study of dynamic electronic effects during brittle fracture of silicon
PL Theofanis, A Jaramillo-Botero, WA Goddard III, H Xiao
Physical Review Letters 108 (4), 045501, 2011
12011
Atomistic Modeling Approach for Predicting Association of Photoacid Generators in Extreme Ultraviolet Polymeric Photoresists
BP Prajwal, JM Blackwell, P Theofanis, FA Escobedo
Chemistry of Materials 35 (21), 9050-9063, 2023
2023
Thin film transistors having a spin-on 2d channel material
CH Naylor, K Maxey, KP O'brien, C Dorow, S Lee, AV Penumatcha, ...
US Patent App. 17/485,176, 2023
2023
Chain scission resist compositions for EUV lithography applications
L Doyle, M Krysak, P Theofanis, J Blackwell, E Han
US Patent 11,262,654, 2022
2022
Euv patterning methods, structures, and materials
M Krysak, J Blackwell, L Doyle, B Zaccheo, P Theofanis, M Robinson, ...
US Patent App. 17/308,813, 2021
2021
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مقالات 1–20