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Patrick Theofanis
Patrick Theofanis
Verified email at intel.com
Title
Cited by
Cited by
Year
Nonadiabatic study of dynamic electronic effects during brittle fracture of silicon
PL Theofanis, A Jaramillo-Botero, WA Goddard III, H Xiao
Physical review letters 108 (4), 045501, 2012
402012
Understanding β-hydride eliminations from heteroatom functional groups
PL Theofanis, WA Goddard III
Organometallics 30 (18), 4941-4948, 2011
232011
Electron dynamics of shocked polyethylene crystal
PL Theofanis, A Jaramillo-Botero, WA Goddard III, TR Mattsson, ...
Physical Review B 85 (9), 094109, 2012
212012
Orientational preference in multilayer block copolymer nanomeshes with respect to layer-to-layer commensurability
CL Carpenter, S Nicaise, PL Theofanis, D Shykind, KK Berggren, ...
Macromolecules 50 (20), 8258-8266, 2017
162017
Non-adiabatic dynamics modeling framework for materials in extreme conditions
H Xiao, A Jaramillo-Botero, PL Theofanis, WA Goddard III
Mechanics of Materials 90, 243-252, 2015
112015
Large-scale molecular simulations of hypervelocity impact of materials
A Jaramillo-Botero, Q An, PL Theofanis, WA Goddard III
Procedia Engineering 58, 167-176, 2013
102013
In silico design of a thermal atomic layer etch process of cobalt
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
Journal of Vacuum Science & Technology A 39 (2), 2021
52021
Adhesion limits and design criteria for nanorelays
KL Lin, GLW Cross, P Gleeson, JP de Silva, A Levander, JA Munoz, ...
IEEE Transactions on Electron Devices 63 (1), 465-470, 2015
52015
Mechanism of thermal atomic layer etch of W metal using sequential oxidation and chlorination: A first-principles study
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
ACS applied materials & interfaces 12 (32), 36670-36680, 2020
42020
Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si (100) and W (110) substrates
MJ King, PL Theofanis, PC Lemaire, EE Santiso, GN Parsons
Journal of Vacuum Science & Technology A 36 (6), 2018
42018
Modeling photon, electron, and chemical interactions in a model hafnium oxide nanocluster EUV photoresist
PL Theofanis, JM Blackwell, ME Krysak, F Gstrein
Extreme Ultraviolet (EUV) Lithography XI 11323, 92-105, 2020
32020
Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator
PL Theofanis, O Tazetdinov
Optical and EUV Nanolithography XXXV, PC120510I, 2022
22022
Magnetic nanomechanical devices for stiction compensation
JA Munoz, DE Nikonov, KJ Kuhn, P Theofanis, C Pawashe, K Lin, S Kim
US Patent 9,926,193, 2018
22018
Transistors with monocrystalline metal chalcogenide channel materials
C Naylor, C Dorow, K O'brien, S Lee, K Maxey, AV Penumatcha, T Gosavi, ...
US Patent App. 17/129,486, 2022
12022
Vertical interconnect methods for stacked device architectures using direct self assembly with high operational parallelization and improved scalability
AD Lilak, P Theofanis, P Morrow, R Mehandru, SM Cea
US Patent 11,011,537, 2021
12021
Supplemental information for: non-adiabatic study of dynamic electronic effects during brittle fracture of silicon
PL Theofanis, A Jaramillo-Botero, WA Goddard III, H Xiao
Physical Review Letters 108 (4), 045501, 2011
12011
Atomistic Modeling Approach for Predicting Association of Photoacid Generators in Extreme Ultraviolet Polymeric Photoresists
BP Prajwal, JM Blackwell, P Theofanis, FA Escobedo
Chemistry of Materials 35 (21), 9050-9063, 2023
2023
Thin film transistors having a spin-on 2d channel material
CH Naylor, K Maxey, KP O'brien, C Dorow, S Lee, AV Penumatcha, ...
US Patent App. 17/485,176, 2023
2023
Chain scission resist compositions for EUV lithography applications
L Doyle, M Krysak, P Theofanis, J Blackwell, E Han
US Patent 11,262,654, 2022
2022
Euv patterning methods, structures, and materials
M Krysak, J Blackwell, L Doyle, B Zaccheo, P Theofanis, M Robinson, ...
US Patent App. 17/308,813, 2021
2021
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