| RF extraction of self-heating effects in FinFETs S Makovejev, S Olsen, JP Raskin IEEE Transactions on Electron Devices 58 (10), 3335-3341, 2011 | 98 | 2011 |
| UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime MKM Arshad, S Makovejev, S Olsen, F Andrieu, JP Raskin, D Flandre, ... Solid-state electronics 90, 56-64, 2013 | 68 | 2013 |
| Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications S Makovejev, BK Esfeh, V Barral, N Planes, M Haond, D Flandre, ... Solid-State Electronics 108, 47-52, 2015 | 59 | 2015 |
| Time and frequency domain characterization of transistor self-heating S Makovejev, SH Olsen, V Kilchytska, JP Raskin IEEE transactions on electron devices 60 (6), 1844-1851, 2013 | 55 | 2013 |
| Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs S Makovejev, JP Raskin, MKM Arshad, D Flandre, S Olsen, F Andrieu, ... Solid-State Electronics 71, 93-100, 2012 | 54 | 2012 |
| Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit V Kilchytska, MKM Arshad, S Makovejev, S Olsen, F Andrieu, T Poiroux, ... Solid-State Electronics 70, 50-58, 2012 | 52 | 2012 |
| A SPDT RF switch small-and large-signal characteristics on TR-HR SOI substrates BK Esfeh, M Rack, S Makovejev, F Allibert, JP Raskin IEEE Journal of the Electron Devices Society 6, 543-550, 2018 | 28 | 2018 |
| Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI S Makovejev, N Planes, M Haond, D Flandre, JP Raskin, V Kilchytska Solid-State Electronics 115, 219-224, 2016 | 26 | 2016 |
| Perspectives of UTBB FD SOI MOSFETs for analog and RF applications V Kilchytska, S Makovejev, MK Md Arshad, JP Raskin, D Flandre Functional Nanomaterials and Devices for Electronics, Sensors and Energy …, 2014 | 26 | 2014 |
| On extraction of self-heating features in UTBB SOI MOSFETs S Makovejev, S Olsen, F Andrieu, T Poiroux, O Faynot, D Flandre, ... 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 25 | 2012 |
| Trigate nanowire MOSFETs analog figures of merit V Kilchytska, S Makovejev, S Barraud, T Poiroux, JP Raskin, D Flandre Solid-State Electronics 112, 78-84, 2015 | 18 | 2015 |
| RF SOI CMOS technology on 1st and 2nd generation trap-rich high resistivity SOI wafers BK Esfeh, S Makovejev, D Basso, E Desbonnets, V Kilchytska, D Flandre, ... Solid-State Electronics 128, 121-128, 2017 | 17 | 2017 |
| Self-heating in 28 nm bulk and FDSOI S Makovejev, N Planes, M Haond, D Flandre, JP Raskin, V Kilchytska EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 17 | 2015 |
| Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices S Makovejev, V Kilchytska, MKM Arshad, D Flandre, F Andrieu, O Faynot, ... Ulis 2011 Ultimate Integration on Silicon, 1-4, 2011 | 17 | 2011 |
| Substrate RF losses and non-linearities in GaN-on-Si HEMT technology S Yadav, P Cardinael, M Zhao, K Vondkar, A Khaled, R Rodriguez, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.2. 1-8.2. 4, 2020 | 14 | 2020 |
| Extensive electrical characterization methodology of advanced MOSFETs towards analog and RF applications V Kilchytska, S Makovejev, BK Esfeh, L Nyssens, A Halder, JP Raskin, ... IEEE Journal of the Electron Devices Society 9, 500-510, 2021 | 10 | 2021 |
| Improvement of high-frequency FinFET performance by fin width engineering S Makovejev, SH Olsen, MKM Arshad, D Flandre, JP Raskin, V Kilchytska 2012 IEEE International SOI Conference (SOI), 1-2, 2012 | 10 | 2012 |
| Comparison of small-signal output conductance frequency dependence in UTBB SOI MOSFETs with and without ground plane S Makovejev, JP Raskin, D Flandre, S Olsen, F Andrieu, T Poiroux, ... IEEE 2011 International SOI Conference, 1-2, 2011 | 10 | 2011 |
| CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, A Khaled, ... 2021 International Conference on IC Design and Technology (ICICDT), 1-4, 2021 | 9 | 2021 |
| Characterisation of Thermal and Coupling Effects in Advanced Silicon MOSFETs S Makovejev Newcastle University, 2012 | 8 | 2012 |
