| Degradation of hexagonal silicon-carbide-based bipolar devices M Skowronski, S Ha Journal of applied physics 99 (1), 1, 2006 | 474 | 2006 |
| Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Applied physics letters 72 (17), 2114-2116, 1998 | 402 | 1998 |
| Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ... Applied physics letters 66 (10), 1252-1254, 1995 | 383 | 1995 |
| Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 301 | 1998 |
| Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ... Applied physics letters 67 (16), 2284-2286, 1995 | 279 | 1995 |
| Dislocation conversion in 4H silicon carbide epitaxy S Ha, P Mieszkowski, M Skowronski, LB Rowland Journal of Crystal Growth 244 (3-4), 257-266, 2002 | 272 | 2002 |
| Intracenter transitions in the dominant deep level (EL2) in GaAs M Kaminska, M Skowronski, J Lagowski, JM Parsey, HC Gatos Applied physics letters 43 (3), 302-304, 1983 | 262 | 1983 |
| Identification of the 0.82-eV Electron Trap, in GaAs, as an Isolated Antisite Arsenic Defect M Kamińska, M Skowroński, W Kuszko Physical review letters 55 (20), 2204, 1985 | 241 | 1985 |
| Lifetime-limiting defects in 4H-SiC epilayers PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ... Applied Physics Letters 88 (5), 052110, 2006 | 214 | 2006 |
| Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions JQ Liu, M Skowronski, C Hallin, R Söderholm, H Lendenmann Applied physics letters 80 (5), 749-751, 2002 | 196 | 2002 |
| Semi‐insulating 6H–SiC grown by physical vapor transport HMD Hobgood, RC Glass, G Augustine, RH Hopkins, J Jenny, ... Applied physics letters 66 (11), 1364-1366, 1995 | 169 | 1995 |
| Structural instability of 4H–SiC polytype induced by n-type doping JQ Liu, HJ Chung, T Kuhr, Q Li, M Skowronski Applied physics letters 80 (12), 2111-2113, 2002 | 161 | 2002 |
| GaN (0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Surface science 423 (1), 70-84, 1999 | 160 | 1999 |
| The mechanism of micropipe nucleation at inclusions in silicon carbide M Dudley, XR Huang, W Huang, A Powell, S Wang, P Neudeck, ... Applied physics letters 75 (6), 784-786, 1999 | 159 | 1999 |
| Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ... Journal of applied physics 83 (2), 983-990, 1998 | 156 | 1998 |
| Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing TA Kuhr, JQ Liu, HJ Chung, M Skowronski, F Szmulowicz Journal of applied physics 92 (10), 5863-5871, 2002 | 154 | 2002 |
| Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect J Lagowski, DG Lin, TP Chen, M Skowronski, HC Gatos Applied physics letters 47 (9), 929-931, 1985 | 138 | 1985 |
| Mechanism for CuPt-type ordering in mixed III–V epitaxial layers BA Philips, AG Norman, TY Seong, S Mahajan, GR Booker, M Skowronski, ... Journal of crystal growth 140 (3-4), 249-263, 1994 | 130 | 1994 |
| Recombination-enhanced defect motion in forward-biased 4H–SiC diodes M Skowronski, JQ Liu, WM Vetter, M Dudley, C Hallin, H Lendenmann Journal of applied physics 92 (8), 4699-4704, 2002 | 127 | 2002 |
| Properties of Si donors and persistent photoconductivity in AlGaN AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ... Solid-State Electronics 42 (4), 627-635, 1998 | 127 | 1998 |
