Marek Skowronski
Cited by
Cited by
Degradation of hexagonal silicon-carbide-based bipolar devices
M Skowronski, S Ha
Journal of applied physics 99 (1), 1, 2006
Determination of wurtzite GaN lattice polarity based on surface reconstruction
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Applied physics letters 72 (17), 2114-2116, 1998
Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
Dislocation conversion in 4H silicon carbide epitaxy
S Ha, P Mieszkowski, M Skowronski, LB Rowland
Journal of Crystal Growth 244 (3-4), 257-266, 2002
Intracenter transitions in the dominant deep level (EL2) in GaAs
M Kaminska, M Skowronski, J Lagowski, JM Parsey, HC Gatos
Applied physics letters 43 (3), 302-304, 1983
Identification of the 0.82-eV Electron Trap, in GaAs, as an Isolated Antisite Arsenic Defect
M Kamińska, M Skowroński, W Kuszko
Physical review letters 55 (20), 2204, 1985
Lifetime-limiting defects in 4H-SiC epilayers
PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ...
Applied Physics Letters 88 (5), 052110, 2006
Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
JQ Liu, M Skowronski, C Hallin, R Söderholm, H Lendenmann
Applied physics letters 80 (5), 749-751, 2002
Semi‐insulating 6H–SiC grown by physical vapor transport
HMD Hobgood, RC Glass, G Augustine, RH Hopkins, J Jenny, ...
Applied physics letters 66 (11), 1364-1366, 1995
Structural instability of 4H–SiC polytype induced by n-type doping
JQ Liu, HJ Chung, T Kuhr, Q Li, M Skowronski
Applied physics letters 80 (12), 2111-2113, 2002
GaN (0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Surface science 423 (1), 70-84, 1999
The mechanism of micropipe nucleation at inclusions in silicon carbide
M Dudley, XR Huang, W Huang, A Powell, S Wang, P Neudeck, ...
Applied physics letters 75 (6), 784-786, 1999
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing
TA Kuhr, JQ Liu, HJ Chung, M Skowronski, F Szmulowicz
Journal of applied physics 92 (10), 5863-5871, 2002
Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect
J Lagowski, DG Lin, TP Chen, M Skowronski, HC Gatos
Applied physics letters 47 (9), 929-931, 1985
Mechanism for CuPt-type ordering in mixed III–V epitaxial layers
BA Philips, AG Norman, TY Seong, S Mahajan, GR Booker, M Skowronski, ...
Journal of crystal growth 140 (3-4), 249-263, 1994
Recombination-enhanced defect motion in forward-biased 4H–SiC diodes
M Skowronski, JQ Liu, WM Vetter, M Dudley, C Hallin, H Lendenmann
Journal of applied physics 92 (8), 4699-4704, 2002
Properties of Si donors and persistent photoconductivity in AlGaN
AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ...
Solid-State Electronics 42 (4), 627-635, 1998
The system can't perform the operation now. Try again later.
Articles 1–20