| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 296 | 2018 |
| A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT/ 370 GHz fMAXHBT and high-Q millimeter-wave passives P Chevalier, G Avenier, G Ribes, A Montagné, E Canderle, D Céli, ... 2014 IEEE international electron devices meeting, 3.9. 1-3.9. 3, 2014 | 231 | 2014 |
| SiGe HBT technology: Future trends and TCAD-based roadmap M Schröter, T Rosenbaum, P Chevalier, B Heinemann, SP Voinigescu, ... Proceedings of the IEEE 105 (6), 1068-1086, 2016 | 205 | 2016 |
| 0.13 m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications G Avenier, M Diop, P Chevalier, G Troillard, N Loubet, J Bouvier, ... IEEE journal of solid-state circuits 44 (9), 2312-2321, 2009 | 176 | 2009 |
| A low-voltage SiGe BiCMOS 77-GHz automotive radar chipset ST Nicolson, KHK Yau, S Pruvost, V Danelon, P Chevalier, P Garcia, ... IEEE Transactions on Microwave Theory and Techniques 56 (5), 1092-1104, 2008 | 141 | 2008 |
| Towards thz sige hbts P Chevalier, TF Meister, B Heinemann, S Van Huylenbroeck, W Liebl, ... 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 57-65, 2011 | 135 | 2011 |
| A study of SiGe HBT signal sources in the 220–330-GHz range SP Voinigescu, A Tomkins, E Dacquay, P Chevalier, J Hasch, A Chantre, ... IEEE Journal of Solid-State Circuits 48 (9), 2011-2021, 2013 | 128 | 2013 |
| 165-GHz transceiver in SiGe technology E Laskin, P Chevalier, A Chantre, B Sautreuil, SP Voinigescu IEEE Journal of Solid-State Circuits 43 (5), 1087-1100, 2008 | 127 | 2008 |
| Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ... Proceedings of the IEEE 105 (6), 1035-1050, 2017 | 112 | 2017 |
| Single-chip W-band SiGe HBT transceivers and receivers for doppler radar and millimeter-wave imaging ST Nicolson, P Chevalier, B Sautreuil, SP Voinigescu IEEE Journal of Solid-State Circuits 43 (10), 2206-2217, 2008 | 104 | 2008 |
| -Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology E Dacquay, A Tomkins, KHK Yau, E Laskin, P Chevalier, A Chantre, ... IEEE Transactions on Microwave Theory and Techniques 60 (3), 813-826, 2012 | 102 | 2012 |
| Physical and electrical performance limits of high-speed SiGeC HBTs—Part I: Vertical scaling M Schroter, G Wedel, B Heinemann, C Jungemann, J Krause, P Chevalier, ... IEEE Transactions on Electron Devices 58 (11), 3687-3696, 2011 | 101 | 2011 |
| 170-GHz transceiver with on-chip antennas in SiGe technology E Laskin, KW Tang, KHK Yau, P Chevalier, A Chantre, B Sautreuil, ... 2008 IEEE Radio Frequency Integrated Circuits Symposium, 637-640, 2008 | 91 | 2008 |
| An 18-Gb/s, direct QPSK modulation SiGe BiCMOS transceiver for last mile links in the 70–80 GHz band I Sarkas, ST Nicolson, A Tomkins, E Laskin, P Chevalier, B Sautreuil, ... IEEE Journal of Solid-State Circuits 45 (10), 1968-1980, 2010 | 89 | 2010 |
| A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX P Chevalier, F Pourchon, T Lacave, G Avenier, Y Campidelli, L Depoyan, ... 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2009 | 89 | 2009 |
| Design and scaling of W-band SiGe BiCMOS VCOs ST Nicolson, KHK Yau, P Chevalier, A Chantre, B Sautreuil, KW Tang, ... IEEE Journal of solid-state circuits 42 (9), 1821-1833, 2007 | 86 | 2007 |
| 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications P Chevalier, C Fellous, L Rubaldo, F Pourchon, S Pruvost, R Beerkens, ... IEEE journal of solid-state circuits 40 (10), 2025-2034, 2005 | 81 | 2005 |
| SiGe BiCMOS current status and future trends in Europe P Chevalier, W Liebl, H Rücker, A Gauthier, D Manger, B Heinemann, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 79 | 2018 |
| A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters E Laskin, P Chevalier, B Sautreuil, SP Voinigescu 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 178-181, 2009 | 74 | 2009 |
| 80/160-GHz transceiver and 140-GHz amplifier in SiGe technology E Laskin, P Chevalier, A Chantre, B Sautreuil, SP Voinigescu 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 153-156, 2007 | 71 | 2007 |
