| Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure AI Kostrov, VR Stempitsky, VN Kazimirchik Twelfth International Workshop on Nanodesign Technology and Computer …, 2009 | 48* | 2009 |
| RADIATION INFLUENCE ON ELECTRICAL CHARACTERISTICS OF COMPLEMENTARY JUNCTION FIELD-EFFECT TRANSISTORS EXPLOITED AT LOW TEMPERATURES. IY Lovshenko, VT Khanko, VR Stempitsky Materials Physics & Mechanics 39 (1), 2018 | 23 | 2018 |
| Magnetic interactions in Cr2Ge2Te6 and Cr2Si2Te6 monolayers: ab initio study MS Baranava, DC Hvazdouski, VA Skachkova, VR Stempitsky, ... Materials Today: Proceedings 20, 342-347, 2020 | 21 | 2020 |
| Suppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements VS Volcheck, VR Stempitsky Journal of Physics: Conference Series 917 (8), 082015, 2017 | 11 | 2017 |
| Magnetic properties of vacancies and doped chromium in a ZnO crystal VN Jafarova, GS Orudzhev, SS Huseynova, VR Stempitsky, MS Baranava Semiconductors 52, 1047-1050, 2018 | 10 | 2018 |
| Long life power factor corrected LED driver with capacitive energy mechanism for street light applications M Faizan, J Bi, M Liu, L Wang, V Stempitsky, MZ Yousaf Sustainability 15 (5), 3991, 2023 | 9 | 2023 |
| Direct exchange interaction of cobalt chains in zinc oxide: model approach M Baranava, AL Danilyuk, VR Stempitsky Materials Physics & Mechanics 39 (1), 15-20, 2018 | 6 | 2018 |
| Design and simulation via Internеt W Kuzmicz, V Nelayev, V Stempitsky, K Kudin Proc. 9th Advanced Training Course on Mixed Design of Integrated Circuits …, 2003 | 6 | 2003 |
| Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis DD Ha, TT Tuan, V Volcheck, V Stempitsky 2019 International Conference on Advanced Technologies for Communications …, 2019 | 5 | 2019 |
| Spin splitting in band structures of BiTeX (X= Cl, Br, I) monolayers DC Hvazdouski, MS Baranava, VR Stempitsky IOP Conference Series: Materials Science and Engineering 347 (1), 012017, 2018 | 5 | 2018 |
| Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application DC Hvazdouski, VR Stempitsky Institute of Problems of Mechanical Engineering (Russian Academy of Sciences), 2018 | 5 | 2018 |
| Statistical design and optimization of IC technology AA Kuleshov, VS Malyshev, VV Nelayev, VR Stempitsky Microelectronics (Russian Journal) 32 (1), 47-61, 2003 | 5 | 2003 |
| Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors J Wang, J Bi, Y Xu, G Niu, M Liu, V Stempitsky Nanomaterials 13 (4), 638, 2023 | 3 | 2023 |
| DC, AC and breakdown simulation of the gallium nitride high electron mobility transistor with a few-layer graphene heat-removal system DD Ha, V Volcheck, V Stempitsky, TT Trung 2022 International Conference on Advanced Technologies for Communications …, 2022 | 3 | 2022 |
| First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0. 5Ga0. 5N DC Hvazdouski, MS Baranava, VR Stempitsky Санкт-Петербургский политехнический университет Петра Великого, 2022 | 3 | 2022 |
| Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material VS Volcheck, VR Stempitsky Doklady BGUIR 19 (6), 74-82, 2021 | 3 | 2021 |
| Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitride VS Volcheck, DC Hvazdouski, MS Baranava, VR Stempitsky БГУИР, 2021 | 3 | 2021 |
| Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures MS Baranava, DC Hvazdouski, VR Stempitsky, SA Volchek, M Najbuk Institute of Problems of Mechanical Engineering (Russian Academy of Sciences), 2018 | 3 | 2018 |
| Electronic properties of graphene-based heterostructures VA Skachkova, MS Baranava, DC Hvazdouski, VR Stempitsky Journal of Physics: Conference Series 917 (9), 092012, 2017 | 3 | 2017 |
| Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers V Volchek, DD Ha, V Stempitsky, TT Trung 2016 International Conference on Advanced Technologies for Communications …, 2016 | 3 | 2016 |
Ivan LovshenkoHead of the R&D Lab. «CAD in Micro- and Nanoelectronics» of the R&D Department of the BSUIRVerified email at bsuir.by
