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Faiza Afroz Faria
Faiza Afroz Faria
Verified email at intel.com
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Year
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
3742012
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
1482012
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
1092013
New tunneling features in polar III-nitride resonant tunneling diodes
J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, ...
Physical Review X 7 (4), 041017, 2017
572017
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ...
Applied Physics Letters 101 (3), 032109, 2012
572012
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
502012
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
502012
Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates
HGX B. Song, B. Sensale-Rodriguez, R. Wang, J. Guo, Z. Hu, Y. Yue, F. Faria ...
IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (3), 747-754, 2014
372014
Low temperature AlN growth by MBE and its application in HEMTs
FA Faria, K Nomoto, Z Hu, S Rouvimov, HG Xing, D Jena
Journal of Crystal Growth 425, 133-137, 2015
232015
InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz
Y Yuanzheng, H Zongyang, G Jia, B Sensale-Rodriguez, L Guowang, ...
IEEE Electron Device Lett 33 (7), 988, 2012
132012
Repeatable room temperature negative differential conductance in GaN/AlN resonant tunneling diodes
J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, P Fay, ...
arXiv preprint arXiv:1606.08100, 2016
62016
MBE Growth of GaN Heterostructures for High Performance HEMTs
FA Faria
University of Notre Dame, 2015
2015
Proc. BCTM, 1991 Proc. BCTM, 1991 188, 1991
R Wang, G Li, G Karbasian, J GUO, F FARIA, Z HU, Y YUE, J VERMA, ...
Proc. BCTM 188, 1991
1991
IEDM Tech. Dig., 2011 IEDM Tech. Dig., 2011 19.1. 1, 2011
R Wang, G Li, G Karbasian, J GUO, F FARIA, Z HU, Y YUE, J VERMA, ...
CS MANTECH Conf. Dig., 2008 CS MANTECH Conf. Dig., 2008 2.3, 2008
R Wang, G Li, G Karbasian, J GUO, F FARIA, Z HU, Y YUE, J VERMA, ...
IEDM Tech. Dig., 2010 IEDM Tech. Dig., 2010 30.4. 1, 2010
R Wang, G Li, G Karbasian, J GUO, F FARIA, Z HU, Y YUE, J VERMA, ...
CSICS Tech. Dig., 2012 CSICS Tech. Dig., 2012 1, 2012
R Wang, G Li, G Karbasian, J GUO, F FARIA, Z HU, Y YUE, J VERMA, ...
IEDM Tech. Dig., 2011 IEDM Tech. Dig., 2011 19.2. 1, 2011
R Wang, G Li, G Karbasian, J GUO, F FARIA, Z HU, Y YUE, J VERMA, ...
Ultra-scaled GaN HEMTs with AlN barrier
HG Xing, E Beam, Y Cao, D Deen, T Fang, F Faria, P Fay, S Ganguly, ...
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